JPS5591876A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5591876A
JPS5591876A JP16481578A JP16481578A JPS5591876A JP S5591876 A JPS5591876 A JP S5591876A JP 16481578 A JP16481578 A JP 16481578A JP 16481578 A JP16481578 A JP 16481578A JP S5591876 A JPS5591876 A JP S5591876A
Authority
JP
Japan
Prior art keywords
gate electrode
semiconductor substrate
floating gate
thickness
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16481578A
Other languages
Japanese (ja)
Other versions
JPS6248909B2 (en
Inventor
Takashi Ito
Shinpei Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16481578A priority Critical patent/JPS5591876A/en
Publication of JPS5591876A publication Critical patent/JPS5591876A/en
Publication of JPS6248909B2 publication Critical patent/JPS6248909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make it possible to write and erase information electrically by preparing the thickness of a gate insulation film to below a certain value in a device provided with a floating gate electrode and a semiconductor substrate. CONSTITUTION:Floating gate electrode 4 is provided, via gate insulation film 3, on a semiconductor substrate 1 of one conduction type. On this floating gate electrode 4 is provided control gate electrode 6 via No.2 gate insulating film 5, and source region 7 and drain region 8 are provided opposite to each other on both sides of the gate electrode. The thickness of gate insulating film 3 is regulated to 500Angstrom or less. Information can be written and erased by a single pole power supply.
JP16481578A 1978-12-28 1978-12-28 Semiconductor memory device Granted JPS5591876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16481578A JPS5591876A (en) 1978-12-28 1978-12-28 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16481578A JPS5591876A (en) 1978-12-28 1978-12-28 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5591876A true JPS5591876A (en) 1980-07-11
JPS6248909B2 JPS6248909B2 (en) 1987-10-16

Family

ID=15800438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16481578A Granted JPS5591876A (en) 1978-12-28 1978-12-28 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5591876A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63175005U (en) * 1987-05-01 1988-11-14

Also Published As

Publication number Publication date
JPS6248909B2 (en) 1987-10-16

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