JPS613113B2 - - Google Patents

Info

Publication number
JPS613113B2
JPS613113B2 JP53108791A JP10879178A JPS613113B2 JP S613113 B2 JPS613113 B2 JP S613113B2 JP 53108791 A JP53108791 A JP 53108791A JP 10879178 A JP10879178 A JP 10879178A JP S613113 B2 JPS613113 B2 JP S613113B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53108791A
Other languages
Japanese (ja)
Other versions
JPS5536937A (en
Inventor
Masanori Kikuchi
Saburo Tokoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10879178A priority Critical patent/JPS5536937A/en
Publication of JPS5536937A publication Critical patent/JPS5536937A/en
Publication of JPS613113B2 publication Critical patent/JPS613113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10879178A 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit Granted JPS5536937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10879178A JPS5536937A (en) 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10879178A JPS5536937A (en) 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit

Publications (2)

Publication Number Publication Date
JPS5536937A JPS5536937A (en) 1980-03-14
JPS613113B2 true JPS613113B2 (en) 1986-01-30

Family

ID=14493564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10879178A Granted JPS5536937A (en) 1978-09-04 1978-09-04 Nonvolatile semiconductor storage unit

Country Status (1)

Country Link
JP (1) JPS5536937A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189391A (en) * 1981-05-15 1982-11-20 Agency Of Ind Science & Technol Nonvolatile semiconductor memory integrated circuit
JPS62265767A (en) * 1986-05-14 1987-11-18 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5536937A (en) 1980-03-14

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