JPS5760867A - Tunnel effect load resistance device - Google Patents

Tunnel effect load resistance device

Info

Publication number
JPS5760867A
JPS5760867A JP13738280A JP13738280A JPS5760867A JP S5760867 A JPS5760867 A JP S5760867A JP 13738280 A JP13738280 A JP 13738280A JP 13738280 A JP13738280 A JP 13738280A JP S5760867 A JPS5760867 A JP S5760867A
Authority
JP
Japan
Prior art keywords
film
type
thickness
source
tunnel effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13738280A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13738280A priority Critical patent/JPS5760867A/en
Publication of JPS5760867A publication Critical patent/JPS5760867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To use a dielectric film as a resistor, by a method wherein the dielectric film as a thin tunnel barrier film connected to a semiconductor device is formed and current passing through the film is controlled. CONSTITUTION:An N type source 2, and an N type drain 3 are provided on a P type Si substrate and a poly Si gate 5 is made through a gate oxide film 4. A poly Si electrode 7 is added to the source 2 through a separate oxide film or nitride film 6. The film 4 has a thickness of about 1,000Angstrom and the film 6 has a diameter of 1mu and a thickness of 10-200Angstrom . The current from a power source input electrode 7a is controlled by a tunnel effect resistor 6 and is supplied to the source 2. The tunnel current can be changed by the thickness of the film 6 and will be about 10<-10>A at a voltage of 20V at 200Angstrom and a semiconductor device becomes a high- resistance substance and can also be arranged in longitudinal type and is suitable for high integration.
JP13738280A 1980-09-30 1980-09-30 Tunnel effect load resistance device Pending JPS5760867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13738280A JPS5760867A (en) 1980-09-30 1980-09-30 Tunnel effect load resistance device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13738280A JPS5760867A (en) 1980-09-30 1980-09-30 Tunnel effect load resistance device

Publications (1)

Publication Number Publication Date
JPS5760867A true JPS5760867A (en) 1982-04-13

Family

ID=15197373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13738280A Pending JPS5760867A (en) 1980-09-30 1980-09-30 Tunnel effect load resistance device

Country Status (1)

Country Link
JP (1) JPS5760867A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01132280U (en) * 1988-03-03 1989-09-07
JPH04230075A (en) * 1990-06-19 1992-08-19 American Teleph & Telegr Co <Att> Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583256A (en) * 1978-12-20 1980-06-23 Toshiba Corp Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583256A (en) * 1978-12-20 1980-06-23 Toshiba Corp Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01132280U (en) * 1988-03-03 1989-09-07
JPH0523271Y2 (en) * 1988-03-03 1993-06-15
JPH04230075A (en) * 1990-06-19 1992-08-19 American Teleph & Telegr Co <Att> Semiconductor device

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