KR960010909A - 박막형성장치 및 박막형성방법 - Google Patents

박막형성장치 및 박막형성방법 Download PDF

Info

Publication number
KR960010909A
KR960010909A KR1019950027426A KR19950027426A KR960010909A KR 960010909 A KR960010909 A KR 960010909A KR 1019950027426 A KR1019950027426 A KR 1019950027426A KR 19950027426 A KR19950027426 A KR 19950027426A KR 960010909 A KR960010909 A KR 960010909A
Authority
KR
South Korea
Prior art keywords
thin film
film forming
forming apparatus
forming method
thin
Prior art date
Application number
KR1019950027426A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960010909A publication Critical patent/KR960010909A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019950027426A 1994-09-01 1995-08-30 박막형성장치 및 박막형성방법 KR960010909A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6208427A JPH0874028A (ja) 1994-09-01 1994-09-01 薄膜形成装置および薄膜形成方法

Publications (1)

Publication Number Publication Date
KR960010909A true KR960010909A (ko) 1996-04-20

Family

ID=16556044

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950027426A KR960010909A (ko) 1994-09-01 1995-08-30 박막형성장치 및 박막형성방법

Country Status (5)

Country Link
US (1) US5755888A (ko)
EP (1) EP0699777A1 (ko)
JP (1) JPH0874028A (ko)
KR (1) KR960010909A (ko)
CN (1) CN1132803A (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US6077157A (en) * 1996-11-18 2000-06-20 Applied Materials, Inc. Process chamber exhaust system
US6152070A (en) * 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US6280790B1 (en) * 1997-06-30 2001-08-28 Applied Materials, Inc. Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
US6228773B1 (en) * 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
JP2001023978A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
WO2001040540A1 (en) * 1999-12-02 2001-06-07 Tegal Corporation Improved reactor with heated and textured electrodes and surfaces
US6630053B2 (en) * 2000-08-22 2003-10-07 Asm Japan K.K. Semiconductor processing module and apparatus
JP2005534174A (ja) * 2002-07-19 2005-11-10 アクセリス テクノロジーズ， インコーポレイテッド フォトレジスト・アッシング装置
KR100429296B1 (ko) * 2002-09-09 2004-04-29 한국전자통신연구원 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조방법
JP4833512B2 (ja) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
US7467916B2 (en) * 2005-03-08 2008-12-23 Asm Japan K.K. Semiconductor-manufacturing apparatus equipped with cooling stage and semiconductor-manufacturing method using same
US7845540B2 (en) * 2005-08-30 2010-12-07 Micron Technology, Inc. Systems and methods for depositing conductive material into openings in microfeature workpieces
US20080006650A1 (en) * 2006-06-27 2008-01-10 Applied Materials, Inc. Method and apparatus for multi-chamber exhaust control
JP2008234850A (ja) * 2007-03-16 2008-10-02 Matsushita Electric Ind Co Ltd 電気化学素子とその電極の製造方法、製造装置
CN101845620B (zh) * 2009-03-27 2012-07-18 亚洲太阳科技有限公司 脉冲加热多匣式化学气相沉积p-i-n镀膜装置
WO2011031672A2 (en) * 2009-09-09 2011-03-17 Applied Materials, Inc. Parallel system for epitaxial chemical vapor deposition
US10204790B2 (en) 2015-07-28 2019-02-12 Asm Ip Holding B.V. Methods for thin film deposition
US11421321B2 (en) 2015-07-28 2022-08-23 Asm Ip Holding B.V. Apparatuses for thin film deposition
JP7014055B2 (ja) * 2018-06-15 2022-02-01 東京エレクトロン株式会社 真空処理装置、真空処理システム、及び真空処理方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123226A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造装置
JPS61149476A (ja) * 1984-12-24 1986-07-08 Toshiba Corp スパツタリング装置
EP0246453A3 (en) * 1986-04-18 1989-09-06 General Signal Corporation Novel multiple-processing and contamination-free plasma etching system
US4725204A (en) * 1986-11-05 1988-02-16 Pennwalt Corporation Vacuum manifold pumping system
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5292393A (en) * 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
JPS63274765A (ja) * 1987-04-28 1988-11-11 Nec Corp 薄膜形成装置
US5016562A (en) * 1988-04-27 1991-05-21 Glasstech Solar, Inc. Modular continuous vapor deposition system
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
US5076205A (en) * 1989-01-06 1991-12-31 General Signal Corporation Modular vapor processor system
JP2948842B2 (ja) * 1989-11-24 1999-09-13 日本真空技術株式会社 インライン型ｃｖｄ装置
US5043299B1 (en) * 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
DE69120446T2 (de) * 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
DE4005956C1 (ko) * 1990-02-26 1991-06-06 Siegfried Dipl.-Ing. Dr. 5135 Selfkant De Straemke
JP2525284B2 (ja) * 1990-10-22 1996-08-14 ティーディーケイ株式会社 クリ―ン搬送方法及び装置
JPH04268725A (ja) * 1991-02-25 1992-09-24 Canon Inc 力学量検出センサおよびその製造方法
US5324360A (en) * 1991-05-21 1994-06-28 Canon Kabushiki Kaisha Method for producing non-monocrystalline semiconductor device and apparatus therefor
JPH081923B2 (ja) * 1991-06-24 1996-01-10 ティーディーケイ株式会社 クリーン搬送方法及び装置
JPH05109655A (ja) * 1991-10-15 1993-04-30 Applied Materials Japan Kk Ｃｖｄ−スパツタ装置
JP2598353B2 (ja) * 1991-12-04 1997-04-09 アネルバ株式会社 基板処理装置、基板搬送装置及び基板交換方法
US5303671A (en) * 1992-02-07 1994-04-19 Tokyo Electron Limited System for continuously washing and film-forming a semiconductor wafer
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
JP3186262B2 (ja) * 1992-10-14 2001-07-11 ソニー株式会社 半導体装置の製造方法
JP3330166B2 (ja) * 1992-12-04 2002-09-30 東京エレクトロン株式会社 処理装置
DE19505258C2 (de) * 1995-02-16 1998-08-06 Samsung Electronics Co Ltd Beschichtungsvorrichtung

Also Published As

Publication number Publication date
CN1132803A (zh) 1996-10-09
JPH0874028A (ja) 1996-03-19
US5755888A (en) 1998-05-26
EP0699777A1 (en) 1996-03-06

Similar Documents

Publication Publication Date Title
FI100409B (fi) Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI945612A (fi) Menetelmä ja laite ohutkalvojen valmistamiseksi
DE69535393D1 (de) Bilderzeugungsverfahren und -gerät
FI973378A0 (fi) Laite ja menetelmä
DE69633218D1 (de) Bildreproduktionsverfahren und -gerät
DE69527353D1 (de) Beschichtungsverfahren und -vorrichtung
DE69517459T2 (de) Bilderzeugungsgerät und -verfahren
DE69404128T2 (de) Abbildungsverfahren und -apparat
DE69623096D1 (de) Belichtungsapparat und -verfahren
KR960010909A (ko) 박막형성장치 및 박막형성방법
EP0997552A4 (en) METHOD FOR MANUFACTURING THIN FUNCTIONAL FILM AND APPARATUS THEREOF
DE69633319D1 (de) Bildreproduktionsverfahren und -gerät
FI972401A0 (fi) Kuvansiirtomenetelmä ja -laite
DE69629790D1 (de) Bildwiedergabeverfahren und -vorrichtung
KR960013620A (ko) 성형 방법 및 성형 장치
KR960009003A (ko) 박막형성방법 및 장치
KR970005038A (ko) 근경조식방법과 그 장치
DE69736412D1 (de) Bilderzeugungsverfahren und -vorrichtung
DE69618636T2 (de) Druckverfahren und -vorrichtung
DE69518183T2 (de) Beschichtungsvorrichtung und -verfahren
DE69534048D1 (de) Bilderzeugungsverfahren und -vorrichtungen
DE69534638T2 (de) Bildverarbeitungsvorrichtung und -verfahren
KR960701745A (ko) 박막형성장치 및 박막형성방법(thin film forming apparatus and thin film forming method)
DE69736880D1 (de) Bilderzeugungsgerät und -verfahren
DE69536034D1 (de) Belichtungsapparat und Belichtungsverfahren

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application