FI945612A - Menetelmä ja laite ohutkalvojen valmistamiseksi - Google Patents

Menetelmä ja laite ohutkalvojen valmistamiseksi Download PDF

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Publication number
FI945612A
FI945612A FI945612A FI945612A FI945612A FI 945612 A FI945612 A FI 945612A FI 945612 A FI945612 A FI 945612A FI 945612 A FI945612 A FI 945612A FI 945612 A FI945612 A FI 945612A
Authority
FI
Finland
Prior art keywords
thin films
making thin
making
films
thin
Prior art date
Application number
FI945612A
Other languages
English (en)
Swedish (sv)
Other versions
FI945612A0 (fi
FI97731B (fi
FI97731C (fi
Inventor
Tuomo Suntola
Sven Lindfors
Pekka Soininen
Original Assignee
Mikrokemia Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mikrokemia Oy filed Critical Mikrokemia Oy
Publication of FI945612A0 publication Critical patent/FI945612A0/fi
Priority to FI945612A priority Critical patent/FI97731C/fi
Priority to AU39857/95A priority patent/AU3985795A/en
Priority to KR1019960704092A priority patent/KR100255431B1/ko
Priority to PCT/FI1995/000659 priority patent/WO1996017969A2/en
Priority to US08/682,703 priority patent/US5711811A/en
Priority to DE19581482T priority patent/DE19581482T1/de
Priority to JP51734396A priority patent/JP3349156B2/ja
Publication of FI945612A publication Critical patent/FI945612A/fi
Publication of FI97731B publication Critical patent/FI97731B/fi
Application granted granted Critical
Publication of FI97731C publication Critical patent/FI97731C/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/06—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FI945612A 1994-11-28 1994-11-28 Menetelmä ja laite ohutkalvojen valmistamiseksi FI97731C (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI945612A FI97731C (fi) 1994-11-28 1994-11-28 Menetelmä ja laite ohutkalvojen valmistamiseksi
AU39857/95A AU3985795A (en) 1994-11-28 1995-11-28 Method and equipment for growing thin films
KR1019960704092A KR100255431B1 (ko) 1994-11-28 1995-11-28 박막을 성장시키기 위한 방법 및 장치
PCT/FI1995/000659 WO1996017969A2 (en) 1994-11-28 1995-11-28 Method and equipment for growing thin films
US08/682,703 US5711811A (en) 1994-11-28 1995-11-28 Method and equipment for growing thin films
DE19581482T DE19581482T1 (de) 1994-11-28 1995-11-28 Verfahren und Ausrüstung zur Bildung von Dünnschichten
JP51734396A JP3349156B2 (ja) 1994-11-28 1995-11-28 薄膜を成長させるための方法と装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI945612 1994-11-28
FI945612A FI97731C (fi) 1994-11-28 1994-11-28 Menetelmä ja laite ohutkalvojen valmistamiseksi

Publications (4)

Publication Number Publication Date
FI945612A0 FI945612A0 (fi) 1994-11-28
FI945612A true FI945612A (fi) 1996-05-29
FI97731B FI97731B (fi) 1996-10-31
FI97731C FI97731C (fi) 1997-02-10

Family

ID=8541889

Family Applications (1)

Application Number Title Priority Date Filing Date
FI945612A FI97731C (fi) 1994-11-28 1994-11-28 Menetelmä ja laite ohutkalvojen valmistamiseksi

Country Status (7)

Country Link
US (1) US5711811A (fi)
JP (1) JP3349156B2 (fi)
KR (1) KR100255431B1 (fi)
AU (1) AU3985795A (fi)
DE (1) DE19581482T1 (fi)
FI (1) FI97731C (fi)
WO (1) WO1996017969A2 (fi)

Families Citing this family (599)

* Cited by examiner, † Cited by third party
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FI945612A0 (fi) 1994-11-28
WO1996017969A3 (en) 1996-08-29
FI97731B (fi) 1996-10-31
KR100255431B1 (ko) 2000-05-01
AU3985795A (en) 1996-06-26
JPH09508888A (ja) 1997-09-09
DE19581482T1 (de) 1997-01-02
US5711811A (en) 1998-01-27
JP3349156B2 (ja) 2002-11-20
KR970700788A (ko) 1997-02-12
FI97731C (fi) 1997-02-10
WO1996017969A2 (en) 1996-06-13

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