FR2731302B1 - Laser a semi-conducteur et procede de fabrication de celui-ci - Google Patents

Laser a semi-conducteur et procede de fabrication de celui-ci

Info

Publication number
FR2731302B1
FR2731302B1 FR9601649A FR9601649A FR2731302B1 FR 2731302 B1 FR2731302 B1 FR 2731302B1 FR 9601649 A FR9601649 A FR 9601649A FR 9601649 A FR9601649 A FR 9601649A FR 2731302 B1 FR2731302 B1 FR 2731302B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9601649A
Other languages
English (en)
Other versions
FR2731302A1 (fr
Inventor
Yutaka Nagai
Akihiro Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2731302A1 publication Critical patent/FR2731302A1/fr
Application granted granted Critical
Publication of FR2731302B1 publication Critical patent/FR2731302B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
FR9601649A 1995-03-02 1996-02-09 Laser a semi-conducteur et procede de fabrication de celui-ci Expired - Fee Related FR2731302B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04277595A JP4011640B2 (ja) 1995-03-02 1995-03-02 半導体レーザ，及び半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
FR2731302A1 FR2731302A1 (fr) 1996-09-06
FR2731302B1 true FR2731302B1 (fr) 1998-02-27

Family

ID=12645351

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9601649A Expired - Fee Related FR2731302B1 (fr) 1995-03-02 1996-02-09 Laser a semi-conducteur et procede de fabrication de celui-ci

Country Status (4)

Country Link
US (1) US5781577A (fr)
JP (1) JP4011640B2 (fr)
DE (1) DE19607894C2 (fr)
FR (1) FR2731302B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100539354B1 (ko) * 1996-09-06 2006-03-09 산요덴키가부시키가이샤 반도체 레이저 소자
JP3387076B2 (ja) * 1997-01-07 2003-03-17 住友電気工業株式会社 半導体レーザ及びその製造方法
JPH11354880A (ja) * 1998-06-03 1999-12-24 Rohm Co Ltd 半導体レーザ素子およびその製造方法
TW413958B (en) * 1999-07-19 2000-12-01 Ind Tech Res Inst Semiconductor laser structure
JP2001274510A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 導波路型光素子及びその製造方法
JP2002185077A (ja) 2000-12-14 2002-06-28 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2003017804A (ja) * 2001-07-04 2003-01-17 Fuji Photo Film Co Ltd 半導体レーザ装置およびその製造方法
KR20050001605A (ko) * 2003-06-26 2005-01-07 삼성전기주식회사 반도체 레이저 소자 및 그 제조방법
CN105633797A (zh) * 2016-03-22 2016-06-01 中山德华芯片技术有限公司 一种大功率量子阱半导体激光器外延片结构

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279686A (ja) * 1985-10-03 1987-04-13 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザおよびその製法
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
JPH01175790A (ja) * 1987-12-29 1989-07-12 Nec Corp ＡｌＧａＡｓ／ＧａＡｓ系埋め込み構造半導体レーザの製造方法
JPH0266984A (ja) * 1988-08-31 1990-03-07 Hikari Keisoku Gijutsu Kaihatsu Kk ブラッグ反射形レーザおよびその製造方法
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
JPH02203586A (ja) * 1989-02-01 1990-08-13 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JPH0314281A (ja) * 1989-06-13 1991-01-22 Nec Corp 窓付自己整合型半導体レーザ及びその製造方法
JPH03131083A (ja) * 1989-10-17 1991-06-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH03208388A (ja) * 1990-01-09 1991-09-11 Nec Corp 半導体レーザ及びその製造方法と不純物拡散方法
JPH0461391A (ja) * 1990-06-29 1992-02-27 Nec Corp ウィンドウ構造半導体レーザ及びその製造方法
DE69102263T2 (de) * 1991-03-11 1994-12-08 Ibm Halbleiteranordnung mit einer auf einem strukturierten Substrat aufgewachsenen Schichtstruktur.
DE69113471T2 (de) * 1991-12-05 1996-05-02 Ibm Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode.
JPH06302906A (ja) * 1993-04-12 1994-10-28 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP3322512B2 (ja) * 1994-04-28 2002-09-09 三洋電機株式会社 半導体レーザ素子の設計方法

Also Published As

Publication number Publication date
JP4011640B2 (ja) 2007-11-21
JPH08242033A (ja) 1996-09-17
DE19607894A1 (de) 1996-09-05
FR2731302A1 (fr) 1996-09-06
US5781577A (en) 1998-07-14
DE19607894C2 (de) 1998-08-27

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20121031