FR2786939B1 - Laser a semi-conducteur et son procede de fabrication - Google Patents

Laser a semi-conducteur et son procede de fabrication

Info

Publication number
FR2786939B1
FR2786939B1 FR9915389A FR9915389A FR2786939B1 FR 2786939 B1 FR2786939 B1 FR 2786939B1 FR 9915389 A FR9915389 A FR 9915389A FR 9915389 A FR9915389 A FR 9915389A FR 2786939 B1 FR2786939 B1 FR 2786939B1
Authority
FR
France
Prior art keywords
producing
same
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9915389A
Other languages
English (en)
Other versions
FR2786939A1 (fr
Inventor
Tsuyoshi Yamamoto
Hajime Shoji
Takayuki Watanabe
Takuya Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2786939A1 publication Critical patent/FR2786939A1/fr
Application granted granted Critical
Publication of FR2786939B1 publication Critical patent/FR2786939B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR9915389A 1998-12-07 1999-12-07 Laser a semi-conducteur et son procede de fabrication Expired - Fee Related FR2786939B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34684298A JP3907854B2 (ja) 1998-12-07 1998-12-07 半導体レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
FR2786939A1 FR2786939A1 (fr) 2000-06-09
FR2786939B1 true FR2786939B1 (fr) 2006-12-01

Family

ID=18386183

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9915389A Expired - Fee Related FR2786939B1 (fr) 1998-12-07 1999-12-07 Laser a semi-conducteur et son procede de fabrication

Country Status (4)

Country Link
US (1) US6512783B1 (fr)
JP (1) JP3907854B2 (fr)
DE (1) DE19958275B4 (fr)
FR (1) FR2786939B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4537549B2 (ja) * 2000-08-08 2010-09-01 富士通株式会社 化合物半導体装置の製造方法
JP3765987B2 (ja) * 2001-02-15 2006-04-12 ユーディナデバイス株式会社 半導体装置の製造方法
JP3718129B2 (ja) * 2001-02-28 2005-11-16 アンリツ株式会社 半導体レーザ及びその製造方法
US7333733B2 (en) * 2002-10-25 2008-02-19 The University Of Connecticut Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variable frequency and variable duty cycle and low jitter
JP4866550B2 (ja) * 2002-12-20 2012-02-01 クリー インコーポレイテッド 自己整合型の半導体メサおよびコンタクト層を有する半導体デバイス、および、該デバイスに関連する構造の形成方法
US7345309B2 (en) * 2004-08-31 2008-03-18 Lockheed Martin Corporation SiC metal semiconductor field-effect transistor
JP2007049007A (ja) * 2005-08-11 2007-02-22 Mitsubishi Electric Corp 半導体レーザ素子およびその製造方法
US7393054B2 (en) * 2005-11-17 2008-07-01 Lear Corporation Self adjusting seatback system
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
JP5545670B2 (ja) 2010-04-27 2014-07-09 住友電工デバイス・イノベーション株式会社 光半導体装置およびその製造方法
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
JP6485341B2 (ja) * 2015-12-10 2019-03-20 住友電気工業株式会社 量子カスケード半導体レーザを作製する方法、量子カスケード半導体レーザ
JP6897928B2 (ja) * 2016-01-14 2021-07-07 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
CN109510062A (zh) * 2018-12-28 2019-03-22 全磊光电股份有限公司 掩埋dfb激光器及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4841536A (en) * 1985-04-12 1989-06-20 Hitachi, Ltd. Semiconductor laser devices
US5260230A (en) * 1991-07-12 1993-11-09 Nippon Telegraph And Telephone Corporation Method of manufacturing buried heterostructure semiconductor laser
JP3034688B2 (ja) 1992-04-27 2000-04-17 株式会社日立製作所 半導体装置
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
US5441912A (en) * 1993-07-28 1995-08-15 The Furukawa Electric Co., Ltd. Method of manufacturing a laser diode
JP3729210B2 (ja) 1994-07-26 2005-12-21 富士通株式会社 半導体装置の製造方法
KR0146714B1 (ko) * 1994-08-08 1998-11-02 양승택 평면 매립형 레이저 다이오드의 제조방법
JP3421140B2 (ja) 1994-08-23 2003-06-30 三菱電機株式会社 半導体レーザ装置の製造方法，および半導体レーザ装置
US5764842A (en) * 1995-03-23 1998-06-09 Hitachi, Ltd. Semiconductor guided-wave optical device and method of fabricating thereof
JPH09237940A (ja) * 1995-12-28 1997-09-09 Mitsubishi Electric Corp 半導体装置，及びその製造方法

Also Published As

Publication number Publication date
US20030012240A1 (en) 2003-01-16
DE19958275B4 (de) 2007-12-20
JP3907854B2 (ja) 2007-04-18
US6512783B1 (en) 2003-01-28
DE19958275A1 (de) 2000-09-28
FR2786939A1 (fr) 2000-06-09
JP2000174389A (ja) 2000-06-23

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Legal Events

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ST Notification of lapse

Effective date: 20140829