DE69801342D1 - Halbleiterlaser und dazugehöriges Herstellungsverfahren - Google Patents

Halbleiterlaser und dazugehöriges Herstellungsverfahren

Info

Publication number
DE69801342D1
DE69801342D1 DE69801342T DE69801342T DE69801342D1 DE 69801342 D1 DE69801342 D1 DE 69801342D1 DE 69801342 T DE69801342 T DE 69801342T DE 69801342 T DE69801342 T DE 69801342T DE 69801342 D1 DE69801342 D1 DE 69801342D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
associated manufacturing
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69801342T
Other languages
English (en)
Other versions
DE69801342T2 (de
Inventor
Nobuyuki Ikoma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69801342D1 publication Critical patent/DE69801342D1/de
Publication of DE69801342T2 publication Critical patent/DE69801342T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69801342T 1997-01-07 1998-01-05 Halbleiterlaser und dazugehöriges Herstellungsverfahren Expired - Lifetime DE69801342T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00073097A JP3387076B2 (ja) 1997-01-07 1997-01-07 半導体レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69801342D1 true DE69801342D1 (de) 2001-09-20
DE69801342T2 DE69801342T2 (de) 2002-05-08

Family

ID=11481860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801342T Expired - Lifetime DE69801342T2 (de) 1997-01-07 1998-01-05 Halbleiterlaser und dazugehöriges Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6005881A (de)
EP (1) EP0852417B1 (de)
JP (1) JP3387076B2 (de)
DE (1) DE69801342T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4379937B2 (ja) * 1999-01-08 2009-12-09 ソニー株式会社 半導体レーザの製造方法
JP3775724B2 (ja) 2000-09-13 2006-05-17 シャープ株式会社 半導体レーザ素子及びその製造方法
JP2002374038A (ja) * 2001-06-14 2002-12-26 Mitsubishi Electric Corp 半導体レーザ装置
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
GB2400234A (en) * 2003-04-02 2004-10-06 Sharp Kk Semiconductor device and method of manufacture
JP2005033077A (ja) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2005286192A (ja) * 2004-03-30 2005-10-13 Sumitomo Electric Ind Ltd 光集積素子
EP1866955A4 (de) 2005-03-25 2011-02-02 Trumpf Photonics Inc Laserfacettenpassivierung
FR2899377B1 (fr) * 2006-03-30 2008-08-08 Centre Nat Rech Scient Procede de realisation de structures en multicouches a proprietes controlees
JP2008263216A (ja) * 2008-06-03 2008-10-30 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2010153564A (ja) * 2008-12-25 2010-07-08 Mitsubishi Electric Corp 半導体レーザ素子及びその製造方法
US10033154B2 (en) 2010-03-03 2018-07-24 Furukawa Electronic Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element
JP4904413B2 (ja) 2010-04-26 2012-03-28 古河電気工業株式会社 半導体レーザ素子および半導体レーザ素子の製造方法
US9912118B2 (en) 2010-06-28 2018-03-06 Iulian Basarab Petrescu-Prahova Diode laser type device
US9755402B2 (en) 2010-06-28 2017-09-05 Iulian Basarab Petrescu-Prahova Edge emitter semiconductor laser type of device with end segments for mirrors protection
JP2013168620A (ja) * 2012-02-17 2013-08-29 Mitsubishi Electric Corp 半導体レーザの製造方法
JP6347573B2 (ja) * 2012-11-30 2018-06-27 シャープ株式会社 半導体レーザ素子
JP5731084B2 (ja) 2013-02-13 2015-06-10 古河電気工業株式会社 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
WO2016024609A1 (ja) 2014-08-12 2016-02-18 古河電気工業株式会社 半導体素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6356979A (ja) * 1986-08-27 1988-03-11 Fujitsu Ltd 半導体レーザ
JPH0648742B2 (ja) * 1987-02-09 1994-06-22 日本電気株式会社 半導体レ−ザの製造方法
US4845725A (en) * 1987-05-20 1989-07-04 Spectra Diode Laboratories, Inc. Window laser with high power reduced divergence output
JPH03116795A (ja) * 1989-09-28 1991-05-17 Nec Corp 半導体レーザ
JPH0629621A (ja) * 1992-07-09 1994-02-04 Mitsubishi Electric Corp 半導体レーザ装置
JPH06302906A (ja) * 1993-04-12 1994-10-28 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH0758402A (ja) * 1993-08-17 1995-03-03 Mitsubishi Electric Corp 半導体レーザ
US5395793A (en) * 1993-12-23 1995-03-07 National Research Council Of Canada Method of bandgap tuning of semiconductor quantum well structures
JP3115775B2 (ja) * 1994-11-16 2000-12-11 三菱電機株式会社 半導体レーザの製造方法
GB9503981D0 (en) * 1995-02-28 1995-04-19 Ca Nat Research Council Bandag tuning of semiconductor well structures
JP4011640B2 (ja) * 1995-03-02 2007-11-21 三菱電機株式会社 半導体レーザ，及び半導体レーザの製造方法
JPH08279649A (ja) * 1995-04-05 1996-10-22 Mitsubishi Electric Corp 半導体レーザの製造方法，及び半導体レーザ
JP3725582B2 (ja) * 1995-07-05 2005-12-14 三菱電機株式会社 半導体レーザ装置の製造方法，及び半導体レーザ装置
JPH09139550A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
JP3682336B2 (ja) * 1996-04-10 2005-08-10 三菱電機株式会社 半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
EP0852417A2 (de) 1998-07-08
DE69801342T2 (de) 2002-05-08
JP3387076B2 (ja) 2003-03-17
US6005881A (en) 1999-12-21
JPH10200190A (ja) 1998-07-31
EP0852417A3 (de) 1998-09-23
EP0852417B1 (de) 2001-08-16

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)