DE69709822D1 - Laserdioden-Array und Herstellungsverfahren - Google Patents

Laserdioden-Array und Herstellungsverfahren

Info

Publication number
DE69709822D1
DE69709822D1 DE69709822T DE69709822T DE69709822D1 DE 69709822 D1 DE69709822 D1 DE 69709822D1 DE 69709822 T DE69709822 T DE 69709822T DE 69709822 T DE69709822 T DE 69709822T DE 69709822 D1 DE69709822 D1 DE 69709822D1
Authority
DE
Germany
Prior art keywords
manufacturing process
laser diode
diode array
array
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69709822T
Other languages
English (en)
Other versions
DE69709822T2 (de
Inventor
Masayuki Yamaguchi
Hiroyuki Yamazaki
Koji Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69709822D1 publication Critical patent/DE69709822D1/de
Application granted granted Critical
Publication of DE69709822T2 publication Critical patent/DE69709822T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69709822T 1996-10-08 1997-10-08 Laserdioden-Array und Herstellungsverfahren Expired - Lifetime DE69709822T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8267006A JPH10117040A (ja) 1996-10-08 1996-10-08 半導体レーザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69709822D1 true DE69709822D1 (de) 2002-02-28
DE69709822T2 DE69709822T2 (de) 2002-08-22

Family

ID=17438754

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709822T Expired - Lifetime DE69709822T2 (de) 1996-10-08 1997-10-08 Laserdioden-Array und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5953359A (de)
EP (1) EP0836255B1 (de)
JP (1) JPH10117040A (de)
DE (1) DE69709822T2 (de)

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JP2000236299A (ja) * 1998-12-18 2000-08-29 Fujitsu Ltd 光送信機及び光伝送システム
US6330388B1 (en) * 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices
JP2001077457A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体レーザおよびその製造方法
JP2001144367A (ja) * 1999-11-11 2001-05-25 Mitsubishi Electric Corp 半導体レーザ装置及びその駆動方法
JP3847038B2 (ja) * 1999-11-26 2006-11-15 Ｎｅｃエレクトロニクス株式会社 光半導体装置およびその製造方法
JP3307905B2 (ja) * 1999-12-28 2002-07-29 日本電気株式会社 光半導体装置およびその製造方法
JP3339488B2 (ja) 2000-02-25 2002-10-28 日本電気株式会社 光半導体装置およびその製造方法
ATE533212T1 (de) 2000-08-09 2011-11-15 Santur Corp Verstimmbarer laserdiode mit verteilter rückkopplung
JP2004513385A (ja) 2000-10-30 2004-04-30 サンター　コーポレイション レーザ／ファイバ結合の制御
AU2002245062A1 (en) * 2000-10-30 2002-07-30 Santur Corporation Laser thermal tuning
AU2002220035A1 (en) * 2000-10-30 2002-05-15 Santur Corporation Tunable controlled laser array
US20020085270A1 (en) * 2000-11-27 2002-07-04 Bendett Mark P. Apparatus and method for integrated photonic devices having add/drop ports and gain
CA2365952A1 (en) * 2000-12-15 2002-06-15 Takeshi Aikiyo Semiconductor laser device for use in a semiconductor laser module and optical amplifier
JP2002223035A (ja) * 2001-01-26 2002-08-09 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
WO2002084742A1 (en) 2001-03-30 2002-10-24 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
AU2002254522A1 (en) 2001-03-30 2003-11-11 Santur Corporation High speed modulation of arrayed lasers
US6813300B2 (en) 2001-03-30 2004-11-02 Santur Corporation Alignment of an on chip modulator
US6781734B2 (en) 2001-03-30 2004-08-24 Santur Corporation Modulator alignment for laser
JP2003069145A (ja) * 2001-06-14 2003-03-07 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子群の作製方法
US20030025171A1 (en) * 2001-07-31 2003-02-06 Geske Jonathan Charles Multiple epitaxial region substrate and technique for making the same
WO2003015226A2 (en) * 2001-08-08 2003-02-20 Santur Corporation Method and system for selecting an output of a vcsel array
US6668003B2 (en) * 2002-02-12 2003-12-23 Quintessence Photonics Corporation Laser diode array with an in-phase output
US20030185514A1 (en) * 2002-03-29 2003-10-02 Bendett Mark P. Method and apparatus for tapping a waveguide on a substrate
US6813405B1 (en) * 2002-03-29 2004-11-02 Teem Photonics Compact apparatus and method for integrated photonic devices having folded directional couplers
US6910780B2 (en) * 2002-04-01 2005-06-28 Santur Corporation Laser and laser signal combiner
US20030196455A1 (en) * 2002-04-17 2003-10-23 Mccov Michael A. Apparatus and method for photonic waveguide fabrication
JP2004088000A (ja) 2002-08-29 2004-03-18 Hitachi Ltd 半導体レーザ素子の製造方法及び半導体レーザ素子
US20040190580A1 (en) * 2003-03-04 2004-09-30 Bardia Pezeshki High-yield high-precision distributed feedback laser based on an array
US7573928B1 (en) 2003-09-05 2009-08-11 Santur Corporation Semiconductor distributed feedback (DFB) laser array with integrated attenuator
EP1740992B1 (de) * 2004-04-15 2018-10-10 Infinera Corporation Kühlerlose photonische integrierte schaltungen (pics) mit schwebendem wellenlängengitter für wdm-übertragungsnetzwerke
US7393710B2 (en) * 2004-10-26 2008-07-01 Samsung Electro-Mechanics Co., Ltd Fabrication method of multi-wavelength semiconductor laser device
KR100568322B1 (ko) 2004-10-29 2006-04-05 삼성전기주식회사 다파장 반도체 레이저 소자
US8000368B2 (en) * 2006-07-26 2011-08-16 Santur Corporation Modulated semiconductor DFB laser array with a MEMS-based RF switch
JP5211728B2 (ja) * 2007-02-07 2013-06-12 住友電気工業株式会社 半導体光素子を作製する方法
JP5086034B2 (ja) * 2007-11-09 2012-11-28 アンリツ株式会社 外部共振器型半導体レーザ装置
JP2009259914A (ja) * 2008-04-14 2009-11-05 Sony Corp レーザ装置、レーザディスプレイ装置およびレーザ照射装置
EP2113973A1 (de) * 2008-04-29 2009-11-04 Alcatel Lucent Laserquelle und Verfahren zur Erzeugung von Millimeterwellen
JP5658691B2 (ja) * 2009-02-25 2015-01-28 コーニンクレッカ フィリップス エヌ ヴェ フォトン冷却依存レーザー電圧を使用するレーザーダイオードのための出力パワーの安定化
JP5901391B2 (ja) * 2012-03-30 2016-04-06 富士通株式会社 光半導体素子、発光装置、光伝送装置及び光半導体素子の製造方法
JP6213103B2 (ja) * 2013-09-27 2017-10-18 三菱電機株式会社 半導体光素子および光モジュール
US9660421B2 (en) 2013-10-07 2017-05-23 Neophotonics Corporation Dynamically-distributable multiple-output pump for fiber optic amplifier
JP6291849B2 (ja) * 2014-01-10 2018-03-14 三菱電機株式会社 半導体装置の製造方法、半導体装置
JP6257361B2 (ja) * 2014-02-04 2018-01-10 三菱電機株式会社 半導体レーザアレイ
JP7046484B2 (ja) * 2016-11-30 2022-04-04 日本ルメンタム株式会社 アレイ半導体光素子、光送信モジュール、及び光モジュール、並びに、それらの製造方法
GB2618679A (en) * 2021-12-30 2023-11-15 Univ Changchun Science & Tech Detector material and preparation method therefor

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Also Published As

Publication number Publication date
EP0836255B1 (de) 2002-01-02
US5953359A (en) 1999-09-14
JPH10117040A (ja) 1998-05-06
DE69709822T2 (de) 2002-08-22
EP0836255A1 (de) 1998-04-15

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