DE69616237T2 - Halbleiter-laserdiode und deren herstellungsverfahren - Google Patents

Halbleiter-laserdiode und deren herstellungsverfahren

Info

Publication number
DE69616237T2
DE69616237T2 DE69616237T DE69616237T DE69616237T2 DE 69616237 T2 DE69616237 T2 DE 69616237T2 DE 69616237 T DE69616237 T DE 69616237T DE 69616237 T DE69616237 T DE 69616237T DE 69616237 T2 DE69616237 T2 DE 69616237T2
Authority
DE
Germany
Prior art keywords
production method
semiconductor laser
laser diode
diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69616237T
Other languages
English (en)
Other versions
DE69616237D1 (de
Inventor
Rodney Adams
Thomas Meney
Robert Downes
Adriaan Valster
Adriaan Acket
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Uniphase Opto Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniphase Opto Holdings Inc filed Critical Uniphase Opto Holdings Inc
Publication of DE69616237D1 publication Critical patent/DE69616237D1/de
Application granted granted Critical
Publication of DE69616237T2 publication Critical patent/DE69616237T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69616237T 1995-06-16 1996-05-28 Halbleiter-laserdiode und deren herstellungsverfahren Expired - Fee Related DE69616237T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95201613 1995-06-16
PCT/IB1996/000503 WO1997000546A2 (en) 1995-06-16 1996-05-28 Semiconductor diode laser and method of manufacturing same

Publications (2)

Publication Number Publication Date
DE69616237D1 DE69616237D1 (de) 2001-11-29
DE69616237T2 true DE69616237T2 (de) 2002-07-11

Family

ID=8220383

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69616237T Expired - Fee Related DE69616237T2 (de) 1995-06-16 1996-05-28 Halbleiter-laserdiode und deren herstellungsverfahren

Country Status (5)

Country Link
US (1) US5956359A (de)
EP (1) EP0776535B1 (de)
JP (1) JPH10504142A (de)
DE (1) DE69616237T2 (de)
WO (1) WO1997000546A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997050133A1 (en) * 1996-06-24 1997-12-31 Philips Electronics N.V. Radiation-emitting semiconductor diode, and method of manufacturing such a diode
JP3985283B2 (ja) * 1997-01-22 2007-10-03 ソニー株式会社 発光素子
KR100239473B1 (ko) 1997-08-20 2000-02-01 구자홍 레이저 다이오드 및 그 제조방법
US6757313B1 (en) * 1999-11-12 2004-06-29 Trumpf Photonics Inc. Control of current spreading in semiconductor laser diodes
DE60021505T2 (de) * 1999-11-19 2006-06-01 Fuji Photo Film Co. Ltd., Minamiashigara Hochleistungshalbleiterlaser mit Strombegrenzung und indexgeführter Struktur
US6731663B1 (en) * 2000-03-28 2004-05-04 The Furukawa Electric Co., Ltd. Ridge waveguide type semiconductor laser device
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
CN101501816A (zh) 2005-03-25 2009-08-05 通快光子学公司 激光器腔面钝化
DE102005037022A1 (de) * 2005-06-28 2007-01-04 Osram Opto Semiconductors Gmbh Strahlungsemittierender optoelektronischer Halbleiterchip mit einer Diffusionsbarriere
US9755403B2 (en) * 2015-06-24 2017-09-05 King Abdullah University Of Science And Technology Controlling the emission wavelength in group III-V semiconductor laser diodes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
JPH05145178A (ja) * 1991-11-18 1993-06-11 Furukawa Electric Co Ltd:The 歪量子井戸半導体レーザ素子
JP3135960B2 (ja) * 1991-12-20 2001-02-19 シャープ株式会社 半導体レーザ装置
JPH05243676A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 半導体レーザ装置
JPH0653602A (ja) * 1992-07-31 1994-02-25 Hitachi Ltd 半導体レーザ素子
JPH0661570A (ja) * 1992-08-04 1994-03-04 Matsushita Electric Ind Co Ltd 歪多重量子井戸半導体レーザ
EP0606821A1 (de) * 1993-01-11 1994-07-20 International Business Machines Corporation Lichtemittierende Heterostrukturen mit modulierter Gitterverformung
JPH07104222A (ja) * 1993-10-05 1995-04-21 Mitsubishi Electric Corp 半導体光変調器
US5559818A (en) * 1994-03-24 1996-09-24 Sanyo Electric Co., Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
EP0776535B1 (de) 2001-10-24
JPH10504142A (ja) 1998-04-14
DE69616237D1 (de) 2001-11-29
EP0776535A1 (de) 1997-06-04
US5956359A (en) 1999-09-21
WO1997000546A2 (en) 1997-01-03
WO1997000546A3 (en) 1997-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee