DE69401733T2 - Halbleiterlaser und dessen Herstellungsverfahren - Google Patents

Halbleiterlaser und dessen Herstellungsverfahren

Info

Publication number
DE69401733T2
DE69401733T2 DE69401733T DE69401733T DE69401733T2 DE 69401733 T2 DE69401733 T2 DE 69401733T2 DE 69401733 T DE69401733 T DE 69401733T DE 69401733 T DE69401733 T DE 69401733T DE 69401733 T2 DE69401733 T2 DE 69401733T2
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
laser
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69401733T
Other languages
English (en)
Other versions
DE69401733D1 (de
Inventor
Akinori Seki
Toyokazu Ohnishi
Jiro Nakano
Takahide C O K K Toyo Sugiyama
Kazuyoshi C O K K Toyot Tomita
Hiroyuki C O K K Toyota C Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of DE69401733D1 publication Critical patent/DE69401733D1/de
Application granted granted Critical
Publication of DE69401733T2 publication Critical patent/DE69401733T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
DE69401733T 1993-10-15 1994-10-13 Halbleiterlaser und dessen Herstellungsverfahren Expired - Fee Related DE69401733T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05258510A JP3081094B2 (ja) 1993-10-15 1993-10-15 半導体レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69401733D1 DE69401733D1 (de) 1997-03-27
DE69401733T2 true DE69401733T2 (de) 1997-09-04

Family

ID=17321216

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401733T Expired - Fee Related DE69401733T2 (de) 1993-10-15 1994-10-13 Halbleiterlaser und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5604761A (de)
EP (1) EP0649202B1 (de)
JP (1) JP3081094B2 (de)
DE (1) DE69401733T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997943A (ja) * 1995-09-28 1997-04-08 Denso Corp スタック型半導体レーザ
JP3314616B2 (ja) * 1995-10-05 2002-08-12 株式会社デンソー 大出力用半導体レーザ素子
JPH10242557A (ja) * 1997-02-21 1998-09-11 Sony Corp 半導体発光装置の製造方法
JP3486900B2 (ja) * 2000-02-15 2004-01-13 ソニー株式会社 発光装置およびそれを用いた光装置
US6730937B2 (en) * 2000-12-26 2004-05-04 Industrial Technology Research Institute High resolution and brightness full-color LED display manufactured using CMP technique
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
JP2008288500A (ja) * 2007-05-21 2008-11-27 Mitsubishi Electric Corp 半導体光デバイス、及びその製造方法
CN102751400B (zh) * 2012-07-18 2016-02-10 合肥彩虹蓝光科技有限公司 一种含金属背镀的半导体原件的切割方法
TW201414004A (zh) * 2012-09-26 2014-04-01 Chi Mei Lighting Tech Corp 發光二極體的製作方法
US8785234B2 (en) * 2012-10-31 2014-07-22 Infineon Technologies Ag Method for manufacturing a plurality of chips
US10066768B2 (en) 2014-05-07 2018-09-04 Baker Hughes, A Ge Company, Llc Tubular connecting arrangement and method of sealingly connecting tubulars
CN107160019A (zh) * 2017-02-23 2017-09-15 广东工业大学 一种半导体激光器微通道热沉叠片的焊接装置及方法
WO2019163274A1 (ja) * 2018-02-26 2019-08-29 パナソニック株式会社 半導体発光素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4306278A (en) * 1975-09-24 1981-12-15 Grumman Aerospace Corporation Semiconductor laser array
JPS5756984A (en) * 1980-09-23 1982-04-05 Mitsubishi Electric Corp Assembling method for semiconductor light emitting device
JPS58142588A (ja) * 1982-02-19 1983-08-24 Hitachi Ltd 半導体レ−ザ−装置
JPS58216485A (ja) * 1982-06-09 1983-12-16 Hitachi Ltd 半導体レ−ザ素子
JPS60196992A (ja) * 1984-03-19 1985-10-05 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS63124486A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS6414985A (en) * 1987-07-08 1989-01-19 Nec Corp Heat sink for semiconductor light emitting element
US4791634A (en) * 1987-09-29 1988-12-13 Spectra-Physics, Inc. Capillary heat pipe cooled diode pumped slab laser
US5001719A (en) * 1989-11-21 1991-03-19 The United States Of America As Represented By The Secretary Of The Army Laser diode array
JPH07112083B2 (ja) * 1990-06-14 1995-11-29 新日本製鐵株式会社 アレイ半導体レーザ端面励起固体レーザ
JPH07112084B2 (ja) * 1990-07-20 1995-11-29 新日本製鐵株式会社 アレイ半導体レーザ励起固体レーザ装置
JP2965668B2 (ja) * 1990-11-13 1999-10-18 株式会社東芝 半導体レーザ素子及びその製造方法

Also Published As

Publication number Publication date
DE69401733D1 (de) 1997-03-27
EP0649202A1 (de) 1995-04-19
EP0649202B1 (de) 1997-02-12
JP3081094B2 (ja) 2000-08-28
JPH07115247A (ja) 1995-05-02
US5604761A (en) 1997-02-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee