DE69601477D1 - Halbleiterlaserdiode und deren Herstellungsverfahren - Google Patents
Halbleiterlaserdiode und deren HerstellungsverfahrenInfo
- Publication number
- DE69601477D1 DE69601477D1 DE69601477T DE69601477T DE69601477D1 DE 69601477 D1 DE69601477 D1 DE 69601477D1 DE 69601477 T DE69601477 T DE 69601477T DE 69601477 T DE69601477 T DE 69601477T DE 69601477 D1 DE69601477 D1 DE 69601477D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- semiconductor laser
- laser diode
- diode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7105763A JPH08307001A (ja) | 1995-04-28 | 1995-04-28 | 半導体レ−ザダイオ−ドおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69601477D1 true DE69601477D1 (de) | 1999-03-18 |
Family
ID=14416243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69601477T Expired - Lifetime DE69601477D1 (de) | 1995-04-28 | 1996-02-20 | Halbleiterlaserdiode und deren Herstellungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US5701321A (de) |
EP (1) | EP0740376B1 (de) |
JP (1) | JPH08307001A (de) |
KR (1) | KR960039454A (de) |
CN (1) | CN1136720A (de) |
DE (1) | DE69601477D1 (de) |
TW (1) | TW344145B (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5850410A (en) * | 1995-03-16 | 1998-12-15 | Fujitsu Limited | Semiconductor laser and method for fabricating the same |
US5805624A (en) * | 1996-07-30 | 1998-09-08 | Hewlett-Packard Company | Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate |
JPH10200204A (ja) * | 1997-01-06 | 1998-07-31 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、その製造方法およびこれを用いた面発光型半導体レーザアレイ |
JP4264992B2 (ja) * | 1997-05-28 | 2009-05-20 | ソニー株式会社 | 半導体装置の製造方法 |
US6233267B1 (en) * | 1998-01-21 | 2001-05-15 | Brown University Research Foundation | Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique |
US6086673A (en) * | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
US6160833A (en) * | 1998-05-06 | 2000-12-12 | Xerox Corporation | Blue vertical cavity surface emitting laser |
US6696223B2 (en) | 1999-02-19 | 2004-02-24 | Agilent Technologies, Inc. | Method for performing photolithography |
JP4267122B2 (ja) * | 1999-02-19 | 2009-05-27 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | フォトリソグラフィ方法及びフォトリソグラフィを行うための装置構成 |
US6803603B1 (en) * | 1999-06-23 | 2004-10-12 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element |
JP2001144331A (ja) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | 発光装置 |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
US7319247B2 (en) | 2000-04-26 | 2008-01-15 | Osram Gmbh | Light emitting-diode chip and a method for producing same |
CN1292494C (zh) | 2000-04-26 | 2006-12-27 | 奥斯兰姆奥普托半导体有限责任公司 | 发光半导体元件及其制造方法 |
TWI289944B (en) | 2000-05-26 | 2007-11-11 | Osram Opto Semiconductors Gmbh | Light-emitting-diode-element with a light-emitting-diode-chip |
FR2809534B1 (fr) * | 2000-05-26 | 2005-01-14 | Commissariat Energie Atomique | Dispositif semiconducteur a injection electronique verticale et son procede de fabrication |
US6693935B2 (en) * | 2000-06-20 | 2004-02-17 | Sony Corporation | Semiconductor laser |
DE10040448A1 (de) * | 2000-08-18 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zu dessen Herstellung |
KR100374796B1 (ko) * | 2001-02-02 | 2003-03-03 | 삼성전기주식회사 | P형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 GaN 면 발광 레이저 다이오드 및그 제조 방법 |
JP4724924B2 (ja) * | 2001-02-08 | 2011-07-13 | ソニー株式会社 | 表示装置の製造方法 |
US7233028B2 (en) | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
US6611002B2 (en) * | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
JP3767496B2 (ja) | 2002-03-01 | 2006-04-19 | セイコーエプソン株式会社 | 面発光型発光素子およびその製造方法、光モジュール、光伝達装置 |
JP4074498B2 (ja) * | 2002-09-25 | 2008-04-09 | セイコーエプソン株式会社 | 面発光型発光素子、光モジュールおよび光伝達装置 |
US6936486B2 (en) * | 2002-11-19 | 2005-08-30 | Jdsu Uniphase Corporation | Low voltage multi-junction vertical cavity surface emitting laser |
DE602004007432T2 (de) * | 2003-05-23 | 2008-03-13 | Rohm and Haas Electronic Materials, L.L.C., Marlborough | Halbleiterlaser mit externem Resonator enthaltend ein Etalon und Verfahren zur Herstellung desselben |
CN100386890C (zh) * | 2004-04-05 | 2008-05-07 | 清华大学 | 一种GaN基发光二极管的制作方法 |
KR100541110B1 (ko) * | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | 다파장 반도체 레이저 제조방법 |
KR100541111B1 (ko) * | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | 다파장 반도체 레이저 제조방법 |
US7786491B2 (en) * | 2006-02-02 | 2010-08-31 | Panasonic Corporation | Semiconductor light-emitting device comprising a plurality of semiconductor layers |
JP5225549B2 (ja) | 2006-03-15 | 2013-07-03 | 日本碍子株式会社 | 半導体素子 |
JP2008171941A (ja) * | 2007-01-10 | 2008-07-24 | Ngk Insulators Ltd | 発光素子 |
CN104078837B (zh) * | 2013-03-29 | 2017-12-15 | 山东华光光电子股份有限公司 | 一种GaN基蓝绿光激光二极管器件及制作方法 |
JP6183045B2 (ja) * | 2013-08-09 | 2017-08-23 | ソニー株式会社 | 発光素子及びその製造方法 |
TWI525863B (zh) * | 2013-09-10 | 2016-03-11 | The wafer package structure is packaged using a wafer package structure A module, and a method of manufacturing the wafer package structure | |
US10439360B1 (en) * | 2014-12-04 | 2019-10-08 | Ii-Vi Delaware, Inc. | VCSEL with emission on substrate side |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
EP3764490A4 (de) * | 2018-03-07 | 2021-04-21 | Sony Semiconductor Solutions Corporation | Oberflächenemittierender laser |
CN111430404B (zh) * | 2020-04-26 | 2024-05-14 | 厦门未来显示技术研究院有限公司 | 可用于微转移的微元件及其制作和转移方法、显示装置 |
TWI769899B (zh) * | 2021-07-28 | 2022-07-01 | 宏捷科技股份有限公司 | 背面出光之面射型雷射裝置的製作方法與結構 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5833888A (ja) * | 1981-08-25 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ |
JP2537824B2 (ja) * | 1986-12-05 | 1996-09-25 | 松下電器産業株式会社 | 半導体集積回路 |
JPH0724318B2 (ja) * | 1988-12-21 | 1995-03-15 | 三菱電機株式会社 | 半導体レーザ装置 |
JPH02271682A (ja) * | 1989-04-13 | 1990-11-06 | Nec Corp | 面発光ダイオードアレイ |
US5073892A (en) * | 1989-06-12 | 1991-12-17 | Hitachi, Ltd. | Semiconductor laser device |
JPH0828554B2 (ja) * | 1989-10-20 | 1996-03-21 | 三菱電機株式会社 | 半導体レーザ及びその製造方法 |
US5038356A (en) * | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
JPH04199589A (ja) * | 1990-11-28 | 1992-07-20 | Mitsubishi Electric Corp | 可視光面発光レーザ装置 |
EP0495301A1 (de) * | 1990-12-14 | 1992-07-22 | AT&T Corp. | Verfahren zur Herstellung eines Halbleiterlasers |
US5146465A (en) * | 1991-02-01 | 1992-09-08 | Apa Optics, Inc. | Aluminum gallium nitride laser |
JPH06244506A (ja) * | 1993-02-19 | 1994-09-02 | Sony Corp | 半導体表示装置及びその製造方法 |
-
1995
- 1995-04-28 JP JP7105763A patent/JPH08307001A/ja active Pending
- 1995-06-28 TW TW084106634A patent/TW344145B/zh active
-
1996
- 1996-02-14 KR KR1019960003581A patent/KR960039454A/ko active IP Right Grant
- 1996-02-15 CN CN96102024A patent/CN1136720A/zh active Pending
- 1996-02-20 DE DE69601477T patent/DE69601477D1/de not_active Expired - Lifetime
- 1996-02-20 EP EP96102542A patent/EP0740376B1/de not_active Expired - Lifetime
- 1996-03-28 US US08/623,378 patent/US5701321A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR960039454A (ko) | 1996-11-25 |
TW344145B (en) | 1998-11-01 |
EP0740376A1 (de) | 1996-10-30 |
EP0740376B1 (de) | 1999-02-03 |
JPH08307001A (ja) | 1996-11-22 |
US5701321A (en) | 1997-12-23 |
CN1136720A (zh) | 1996-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |