DE69601477D1 - Halbleiterlaserdiode und deren Herstellungsverfahren - Google Patents

Halbleiterlaserdiode und deren Herstellungsverfahren

Info

Publication number
DE69601477D1
DE69601477D1 DE69601477T DE69601477T DE69601477D1 DE 69601477 D1 DE69601477 D1 DE 69601477D1 DE 69601477 T DE69601477 T DE 69601477T DE 69601477 T DE69601477 T DE 69601477T DE 69601477 D1 DE69601477 D1 DE 69601477D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
laser diode
diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69601477T
Other languages
English (en)
Inventor
Norio Hayafuji
Zempei Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69601477D1 publication Critical patent/DE69601477D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69601477T 1995-04-28 1996-02-20 Halbleiterlaserdiode und deren Herstellungsverfahren Expired - Lifetime DE69601477D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7105763A JPH08307001A (ja) 1995-04-28 1995-04-28 半導体レ−ザダイオ−ドおよびその製造方法

Publications (1)

Publication Number Publication Date
DE69601477D1 true DE69601477D1 (de) 1999-03-18

Family

ID=14416243

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601477T Expired - Lifetime DE69601477D1 (de) 1995-04-28 1996-02-20 Halbleiterlaserdiode und deren Herstellungsverfahren

Country Status (7)

Country Link
US (1) US5701321A (de)
EP (1) EP0740376B1 (de)
JP (1) JPH08307001A (de)
KR (1) KR960039454A (de)
CN (1) CN1136720A (de)
DE (1) DE69601477D1 (de)
TW (1) TW344145B (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5850410A (en) * 1995-03-16 1998-12-15 Fujitsu Limited Semiconductor laser and method for fabricating the same
US5805624A (en) * 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
JPH10200204A (ja) * 1997-01-06 1998-07-31 Fuji Xerox Co Ltd 面発光型半導体レーザ、その製造方法およびこれを用いた面発光型半導体レーザアレイ
JP4264992B2 (ja) * 1997-05-28 2009-05-20 ソニー株式会社 半導体装置の製造方法
US6233267B1 (en) * 1998-01-21 2001-05-15 Brown University Research Foundation Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6160833A (en) * 1998-05-06 2000-12-12 Xerox Corporation Blue vertical cavity surface emitting laser
US6696223B2 (en) 1999-02-19 2004-02-24 Agilent Technologies, Inc. Method for performing photolithography
JP4267122B2 (ja) * 1999-02-19 2009-05-27 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド フォトリソグラフィ方法及びフォトリソグラフィを行うための装置構成
US6803603B1 (en) * 1999-06-23 2004-10-12 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
JP2001144331A (ja) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
US6878563B2 (en) 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
JP2003533030A (ja) * 2000-04-26 2003-11-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ＧａＮをベースとする発光ダイオードチップおよび発光ダイオード構造素子の製造法
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
FR2809534B1 (fr) * 2000-05-26 2005-01-14 Commissariat Energie Atomique Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
US6693935B2 (en) * 2000-06-20 2004-02-17 Sony Corporation Semiconductor laser
DE10040448A1 (de) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
KR100374796B1 (ko) * 2001-02-02 2003-03-03 삼성전기주식회사 Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법
JP4724924B2 (ja) * 2001-02-08 2011-07-13 ソニー株式会社 表示装置の製造方法
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
JP3767496B2 (ja) * 2002-03-01 2006-04-19 セイコーエプソン株式会社 面発光型発光素子およびその製造方法、光モジュール、光伝達装置
JP4074498B2 (ja) * 2002-09-25 2008-04-09 セイコーエプソン株式会社 面発光型発光素子、光モジュールおよび光伝達装置
US6936486B2 (en) * 2002-11-19 2005-08-30 Jdsu Uniphase Corporation Low voltage multi-junction vertical cavity surface emitting laser
EP1480302B1 (de) * 2003-05-23 2007-07-11 Rohm and Haas Electronic Materials, L.L.C. Halbleiterlaser mit externem Resonator enthaltend ein Etalon und Verfahren zur Herstellung desselben
CN100386890C (zh) * 2004-04-05 2008-05-07 清华大学 一种GaN基发光二极管的制作方法
KR100541110B1 (ko) * 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
KR100541111B1 (ko) * 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
US7786491B2 (en) * 2006-02-02 2010-08-31 Panasonic Corporation Semiconductor light-emitting device comprising a plurality of semiconductor layers
JP5225549B2 (ja) * 2006-03-15 2013-07-03 日本碍子株式会社 半導体素子
JP2008171941A (ja) * 2007-01-10 2008-07-24 Ngk Insulators Ltd 発光素子
CN104078837B (zh) * 2013-03-29 2017-12-15 山东华光光电子股份有限公司 一种GaN基蓝绿光激光二极管器件及制作方法
JP6183045B2 (ja) 2013-08-09 2017-08-23 ソニー株式会社 発光素子及びその製造方法
TWI525863B (zh) * 2013-09-10 2016-03-11 The wafer package structure is packaged using a wafer package structure A module, and a method of manufacturing the wafer package structure
US10439360B1 (en) * 2014-12-04 2019-10-08 Ii-Vi Delaware, Inc. VCSEL with emission on substrate side
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
EP3764490A4 (de) * 2018-03-07 2021-04-21 Sony Semiconductor Solutions Corporation Oberflächenemittierender laser
CN111430404B (zh) * 2020-04-26 2024-05-14 厦门未来显示技术研究院有限公司 可用于微转移的微元件及其制作和转移方法、显示装置
TWI769899B (zh) * 2021-07-28 2022-07-01 宏捷科技股份有限公司 背面出光之面射型雷射裝置的製作方法與結構

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833888A (ja) * 1981-08-25 1983-02-28 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
JP2537824B2 (ja) * 1986-12-05 1996-09-25 松下電器産業株式会社 半導体集積回路
JPH0724318B2 (ja) * 1988-12-21 1995-03-15 三菱電機株式会社 半導体レーザ装置
JPH02271682A (ja) * 1989-04-13 1990-11-06 Nec Corp 面発光ダイオードアレイ
US5073892A (en) * 1989-06-12 1991-12-17 Hitachi, Ltd. Semiconductor laser device
JPH0828554B2 (ja) * 1989-10-20 1996-03-21 三菱電機株式会社 半導体レーザ及びその製造方法
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
JPH04199589A (ja) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp 可視光面発光レーザ装置
EP0495301A1 (de) * 1990-12-14 1992-07-22 AT&T Corp. Verfahren zur Herstellung eines Halbleiterlasers
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
JPH06244506A (ja) * 1993-02-19 1994-09-02 Sony Corp 半導体表示装置及びその製造方法

Also Published As

Publication number Publication date
EP0740376B1 (de) 1999-02-03
KR960039454A (ko) 1996-11-25
TW344145B (en) 1998-11-01
EP0740376A1 (de) 1996-10-30
JPH08307001A (ja) 1996-11-22
US5701321A (en) 1997-12-23
CN1136720A (zh) 1996-11-27

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Legal Events

Date Code Title Description
8332 No legal effect for de