DE69319317D1 - Halbleiterlaser und Herstellungsverfahren - Google Patents

Halbleiterlaser und Herstellungsverfahren

Info

Publication number
DE69319317D1
DE69319317D1 DE69319317T DE69319317T DE69319317D1 DE 69319317 D1 DE69319317 D1 DE 69319317D1 DE 69319317 T DE69319317 T DE 69319317T DE 69319317 T DE69319317 T DE 69319317T DE 69319317 D1 DE69319317 D1 DE 69319317D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
laser
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319317T
Other languages
English (en)
Other versions
DE69319317T2 (de
Inventor
Syoichi Kakimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69319317D1 publication Critical patent/DE69319317D1/de
Application granted granted Critical
Publication of DE69319317T2 publication Critical patent/DE69319317T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
DE69319317T 1992-12-15 1993-12-13 Halbleiterlaser und Herstellungsverfahren Expired - Fee Related DE69319317T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4354578A JP2815769B2 (ja) 1992-12-15 1992-12-15 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
DE69319317D1 true DE69319317D1 (de) 1998-07-30
DE69319317T2 DE69319317T2 (de) 1999-03-11

Family

ID=18438502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319317T Expired - Fee Related DE69319317T2 (de) 1992-12-15 1993-12-13 Halbleiterlaser und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5486490A (de)
EP (1) EP0602579B1 (de)
JP (1) JP2815769B2 (de)
DE (1) DE69319317T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08307012A (ja) * 1995-05-01 1996-11-22 Mitsubishi Electric Corp 選択成長用マスク，半導体光装置の製造方法，および半導体光装置
JPH09128904A (ja) 1995-11-01 1997-05-16 Canon Inc 情報再生装置
US5757833A (en) * 1995-11-06 1998-05-26 The Furukawa Electric Co., Ltd. Semiconductor laser having a transparent light emitting section, and a process of producing the same
JPH09252165A (ja) * 1996-03-18 1997-09-22 Fujitsu Ltd 化合物半導体装置の製造方法
DE19646119A1 (de) * 1996-11-08 1998-05-14 Hoechst Ag Elektrolumineszenzvorrichtung
US6267282B1 (en) * 1999-04-01 2001-07-31 Agere Systems Optoelectronics Guardian Corp. Method and apparatus for handling laser bars
US20010004114A1 (en) * 1999-12-15 2001-06-21 Masaaki Yuri Semiconductor light emitter and method for fabricating the same
JP3804485B2 (ja) * 2001-08-02 2006-08-02 ソニー株式会社 半導体レーザー素子の製造方法
US6898224B2 (en) * 2001-08-22 2005-05-24 The Furukawa Electric Co., Ltd. Semiconductor laser device
US7601979B2 (en) * 2004-01-29 2009-10-13 Showa Denko K.K. Gallium nitride-based compound semiconductor multilayer structure and production method thereof
DE102015104700A1 (de) * 2015-03-27 2016-09-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2017224763A (ja) * 2016-06-16 2017-12-21 三菱電機株式会社 半導体素子の製造方法、半導体素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898996A (ja) * 1981-12-03 1983-06-13 ゼロツクス・コ−ポレ−シヨン 注入形レ−ザ
JPS6017979A (ja) * 1983-07-11 1985-01-29 Nec Corp 半導体レ−ザ
EP0264225B1 (de) * 1986-10-07 1994-01-19 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben
JPH069277B2 (ja) * 1988-01-14 1994-02-02 松下電器産業株式会社 半導体装置およびその製造方法
JPH0314279A (ja) * 1989-06-13 1991-01-22 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPH0332084A (ja) * 1989-06-29 1991-02-12 Nec Corp 半導体レーザの製造方法
GB2237654B (en) * 1989-11-02 1993-11-10 Stc Plc Semiconductor optical source
JP2890745B2 (ja) * 1990-08-20 1999-05-17 富士通株式会社 半導体装置の製造方法および、光半導体装置の製造方法
EP0643461B1 (de) * 1990-08-24 1997-10-29 Nec Corporation Verfahren zur Herstellung einer optischen Halbleitervorrichtung
US6983628B2 (en) * 2000-09-04 2006-01-10 Lg Electronics Inc. Washing machine and system data changing method of the same

Also Published As

Publication number Publication date
US5486490A (en) 1996-01-23
JP2815769B2 (ja) 1998-10-27
EP0602579A1 (de) 1994-06-22
DE69319317T2 (de) 1999-03-11
JPH06181363A (ja) 1994-06-28
EP0602579B1 (de) 1998-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee