DE69132868D1 - Halbleiterlaservorrichtung und Herstellungsverfahren - Google Patents
Halbleiterlaservorrichtung und HerstellungsverfahrenInfo
- Publication number
- DE69132868D1 DE69132868D1 DE69132868T DE69132868T DE69132868D1 DE 69132868 D1 DE69132868 D1 DE 69132868D1 DE 69132868 T DE69132868 T DE 69132868T DE 69132868 T DE69132868 T DE 69132868T DE 69132868 D1 DE69132868 D1 DE 69132868D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25292990A JPH04130786A (ja) | 1990-09-21 | 1990-09-21 | 半導体レーザ素子及びその製造方法 |
JP28312590 | 1990-10-19 | ||
JP5905991 | 1991-03-22 | ||
JP3236646A JP2981315B2 (ja) | 1990-10-19 | 1991-09-17 | 半導体レーザ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132868D1 true DE69132868D1 (de) | 2002-01-24 |
DE69132868T2 DE69132868T2 (de) | 2002-08-01 |
Family
ID=27463720
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69120185T Expired - Fee Related DE69120185T2 (de) | 1990-09-21 | 1991-09-23 | Halbleiterlaser |
DE69132868T Expired - Fee Related DE69132868T2 (de) | 1990-09-21 | 1991-09-23 | Halbleiterlaservorrichtung und Herstellungsverfahren |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69120185T Expired - Fee Related DE69120185T2 (de) | 1990-09-21 | 1991-09-23 | Halbleiterlaser |
Country Status (3)
Country | Link |
---|---|
US (1) | US5228047A (de) |
EP (2) | EP0477033B1 (de) |
DE (2) | DE69120185T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5413956A (en) * | 1992-03-04 | 1995-05-09 | Sharp Kabushiki Kaisha | Method for producing a semiconductor laser device |
DE4238137A1 (de) * | 1992-11-12 | 1994-05-19 | Ant Nachrichtentech | Verfahren zur Herstellung von Vorrichtungen mit Bauelementen |
US5346855A (en) * | 1993-01-19 | 1994-09-13 | At&T Bell Laboratories | Method of making an INP-based DFB laser |
JPH0878771A (ja) * | 1994-09-02 | 1996-03-22 | Sumitomo Electric Ind Ltd | 半導体レーザとその製造方法 |
JP3734849B2 (ja) * | 1995-05-08 | 2006-01-11 | 三菱電機株式会社 | 半導体レーザ装置の製造方法 |
JP2914430B2 (ja) * | 1996-01-05 | 1999-06-28 | 日本電気株式会社 | 半導体レーザ素子の製造方法 |
US5799028A (en) * | 1996-07-18 | 1998-08-25 | Sdl, Inc. | Passivation and protection of a semiconductor surface |
JPH10112566A (ja) * | 1996-10-07 | 1998-04-28 | Furukawa Electric Co Ltd:The | 半導体レーザ |
US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
US6596557B1 (en) * | 2000-03-02 | 2003-07-22 | Orchid Lightwave Communications, Inc. | Integrated optical devices and methods of making such devices |
US6744796B1 (en) * | 2000-03-30 | 2004-06-01 | Triquint Technology Holding Co. | Passivated optical device and method of forming the same |
US6451120B1 (en) * | 2000-09-21 | 2002-09-17 | Adc Telecommunications, Inc. | Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers |
JP4033626B2 (ja) * | 2000-10-06 | 2008-01-16 | 日本オプネクスト株式会社 | 半導体レーザ装置の製造方法 |
JP2002164609A (ja) * | 2000-11-28 | 2002-06-07 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
EP1219397A1 (de) * | 2000-12-27 | 2002-07-03 | Optical Technologies Italia S.p.A. | Verfahren und Vorrichtung zum Laden, Entladen und Übertragen von Halbleiterstäben |
JP2003204110A (ja) * | 2001-11-01 | 2003-07-18 | Furukawa Electric Co Ltd:The | 半導体レーザ装置およびこれを用いた半導体レーザモジュール |
JP3868286B2 (ja) * | 2001-12-21 | 2007-01-17 | シャープ株式会社 | フォトマスクおよび半導体レーザ素子の製造方法 |
GB2439973A (en) * | 2006-07-13 | 2008-01-16 | Sharp Kk | Modifying the optical properties of a nitride optoelectronic device |
TW200835100A (en) * | 2007-02-13 | 2008-08-16 | Aurotek Corp | Laser diode |
JP5128604B2 (ja) | 2007-09-04 | 2013-01-23 | 古河電気工業株式会社 | 半導体レーザ素子および半導体レーザ素子製造方法 |
DE102007059538B4 (de) * | 2007-12-11 | 2009-08-20 | Lumics Gmbh | Passivierung einer Resonator-Endfläche eines Halbleiter-Lasers mit einem Halbleiter-Übergitter |
CN104995805B (zh) | 2013-02-13 | 2018-04-20 | 古河电气工业株式会社 | 半导体光元件、半导体激光元件、及其制造方法、和半导体激光模块元件以及半导体元件的制造方法 |
JP2019125738A (ja) * | 2018-01-18 | 2019-07-25 | シャープ株式会社 | 半導体レーザ素子、その製造方法および発光装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5527474A (en) * | 1978-08-19 | 1980-02-27 | Arata Kogyosho:Kk | Manufacture of spherical head for use of oiler or the like of diesel engine |
JPS5864023A (ja) * | 1981-10-14 | 1983-04-16 | Semiconductor Energy Lab Co Ltd | プラズマ気相法 |
US4731792A (en) * | 1983-06-29 | 1988-03-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device with decreased light intensity noise |
JPS6091692A (ja) * | 1983-10-25 | 1985-05-23 | Sharp Corp | 半導体レ−ザ装置 |
JPS61220390A (ja) * | 1985-03-26 | 1986-09-30 | Toshiba Corp | 半導体レ−ザの端面保護膜形成用治具 |
GB2195822B (en) * | 1986-09-30 | 1990-01-24 | Stc Plc | Injection lasers |
JPS63308992A (ja) * | 1987-06-11 | 1988-12-16 | Nec Corp | 光半導体素子の製造方法 |
JPS6433987A (en) * | 1987-07-29 | 1989-02-03 | Nec Corp | Semiconductor laser device |
JPS6455891A (en) * | 1987-08-27 | 1989-03-02 | Seiko Epson Corp | Jig for forming end surface protecting film of semiconductor laser |
JPH0671121B2 (ja) * | 1987-09-04 | 1994-09-07 | シャープ株式会社 | 半導体レーザ装置 |
JPH01102982A (ja) * | 1987-10-16 | 1989-04-20 | Nec Corp | 半導体レーザ装置 |
JPH01227485A (ja) * | 1988-03-07 | 1989-09-11 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH0210789A (ja) * | 1988-06-28 | 1990-01-16 | Nec Corp | 端面コーティング方法 |
JPH02166775A (ja) * | 1988-12-20 | 1990-06-27 | Sumitomo Electric Ind Ltd | 発光ダイオード用化合物半導体の製造方法及び発光ダイオード |
JPH07109924B2 (ja) * | 1989-03-13 | 1995-11-22 | シャープ株式会社 | 半導体レーザ装置及びその製造方法 |
-
1991
- 1991-09-20 US US07/762,769 patent/US5228047A/en not_active Expired - Lifetime
- 1991-09-23 EP EP91308619A patent/EP0477033B1/de not_active Expired - Lifetime
- 1991-09-23 EP EP95117077A patent/EP0697756B1/de not_active Expired - Lifetime
- 1991-09-23 DE DE69120185T patent/DE69120185T2/de not_active Expired - Fee Related
- 1991-09-23 DE DE69132868T patent/DE69132868T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69120185D1 (de) | 1996-07-18 |
EP0697756A2 (de) | 1996-02-21 |
EP0697756B1 (de) | 2001-12-12 |
DE69120185T2 (de) | 1997-01-09 |
US5228047A (en) | 1993-07-13 |
DE69132868T2 (de) | 2002-08-01 |
EP0477033B1 (de) | 1996-06-12 |
EP0477033A2 (de) | 1992-03-25 |
EP0697756A3 (de) | 1996-07-17 |
EP0477033A3 (en) | 1992-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |