DE69504262D1 - Halbleiterlaser und dessen Herstellungsverfahren - Google Patents

Halbleiterlaser und dessen Herstellungsverfahren

Info

Publication number
DE69504262D1
DE69504262D1 DE69504262T DE69504262T DE69504262D1 DE 69504262 D1 DE69504262 D1 DE 69504262D1 DE 69504262 T DE69504262 T DE 69504262T DE 69504262 T DE69504262 T DE 69504262T DE 69504262 D1 DE69504262 D1 DE 69504262D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
laser
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69504262T
Other languages
English (en)
Other versions
DE69504262T2 (de
Inventor
Takashi Motoda
Manabu Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69504262D1 publication Critical patent/DE69504262D1/de
Application granted granted Critical
Publication of DE69504262T2 publication Critical patent/DE69504262T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
DE69504262T 1994-09-19 1995-09-12 Halbleiterlaser und dessen Herstellungsverfahren Expired - Fee Related DE69504262T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6223327A JPH0888434A (ja) 1994-09-19 1994-09-19 半導体レーザ，及びその製造方法

Publications (2)

Publication Number Publication Date
DE69504262D1 true DE69504262D1 (de) 1998-10-01
DE69504262T2 DE69504262T2 (de) 1999-05-12

Family

ID=16796420

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69504262T Expired - Fee Related DE69504262T2 (de) 1994-09-19 1995-09-12 Halbleiterlaser und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5737350A (de)
EP (2) EP0702439B1 (de)
JP (1) JPH0888434A (de)
DE (1) DE69504262T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0805533B1 (de) * 1994-12-28 2001-07-11 Mitsui Chemicals, Inc. Halbleiter-laserelement
JPH10150243A (ja) * 1996-11-15 1998-06-02 Sony Corp 半導体発光素子およびその製造方法
GB2320609A (en) * 1996-12-21 1998-06-24 Sharp Kk Semiconductor laser device
JP3014341B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有したダイオード
JP3014339B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
US6331716B1 (en) * 1998-02-06 2001-12-18 Canare Electric Co., Ltd. Variable capacity device with quantum-wave interference layers
JP3014363B2 (ja) * 1998-04-24 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
US6294795B1 (en) 1998-04-28 2001-09-25 Canare Electric Co., Ltd. Light-receiving device with quantum-wave interference layers
JP3014364B2 (ja) 1998-05-26 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
JP2000124443A (ja) * 1998-10-21 2000-04-28 Canare Electric Co Ltd エネルギバンド急変層を有した半導体素子
JP3377950B2 (ja) * 1998-10-23 2003-02-17 カナレ電気株式会社 量子波干渉層を有する発光素子
JP3442668B2 (ja) * 1998-10-23 2003-09-02 カナレ電気株式会社 量子波干渉層を有した電界効果トランジスタ
US6818916B2 (en) * 1998-12-17 2004-11-16 Canare Electric Co., Ltd. Light-receiving device with quantum-wave interference layers
JP2001068661A (ja) * 1999-08-27 2001-03-16 Canare Electric Co Ltd 量子波干渉層を有した半導体素子
JP2001102625A (ja) * 1999-09-29 2001-04-13 Canare Electric Co Ltd 量子波干渉層を有する半導体発光素子
KR100703096B1 (ko) * 2005-10-17 2007-04-06 삼성전기주식회사 질화물 반도체 발광 소자
KR101360964B1 (ko) * 2007-07-24 2014-02-11 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
KR20090117538A (ko) * 2008-05-09 2009-11-12 삼성전기주식회사 질화물 반도체 발광소자
KR20120138080A (ko) * 2011-06-14 2012-12-24 엘지이노텍 주식회사 발광 소자

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
JPH0666519B2 (ja) * 1986-08-14 1994-08-24 東京工業大学長 超格子構造体
JPS6346790A (ja) * 1986-08-15 1988-02-27 Nec Corp 埋込み型半導体レ−ザおよびその製造方法
US4882734A (en) * 1988-03-09 1989-11-21 Xerox Corporation Quantum well heterostructure lasers with low current density threshold and higher TO values
US5073892A (en) * 1989-06-12 1991-12-17 Hitachi, Ltd. Semiconductor laser device
JPH0410527A (ja) * 1990-04-27 1992-01-14 Nippon Telegr & Teleph Corp <Ntt> 半導体超格子
JP2937460B2 (ja) * 1990-11-07 1999-08-23 日本電気株式会社 量子井戸構造光素子
US5251224A (en) * 1990-11-09 1993-10-05 The Furukawa Electric Co., Ltd. Quantum barrier semiconductor optical device
JP3067880B2 (ja) * 1991-01-12 2000-07-24 キヤノン株式会社 回折格子を有する光検出装置
JP3166178B2 (ja) * 1991-02-07 2001-05-14 日本電気株式会社 半導体レーザ
JP3181063B2 (ja) * 1991-02-28 2001-07-03 健一 伊賀 超格子構造体，それを用いた電子またはホールの閉じ込め構造および半導体発光素子
JPH0555697A (ja) * 1991-08-29 1993-03-05 Toshiba Corp 半導体レーザ
KR950000119B1 (ko) * 1991-12-30 1995-01-09 주식회사 금성사 반도체 레이저의 구조
JPH0675257A (ja) * 1992-07-30 1994-03-18 Internatl Business Mach Corp <Ibm> 非線形光学装置
US5390209A (en) * 1994-01-05 1995-02-14 At&T Corp. Article comprising a semiconductor laser that is non-degenerate with regard to polarization

Also Published As

Publication number Publication date
EP0702439B1 (de) 1998-08-26
EP0702439A1 (de) 1996-03-20
DE69504262T2 (de) 1999-05-12
EP0798831A1 (de) 1997-10-01
JPH0888434A (ja) 1996-04-02
US5737350A (en) 1998-04-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee