DE69510529T2 - Strahlungsemittierende halbleiter-diode und herstellungsverfahren - Google Patents

Strahlungsemittierende halbleiter-diode und herstellungsverfahren

Info

Publication number
DE69510529T2
DE69510529T2 DE69510529T DE69510529T DE69510529T2 DE 69510529 T2 DE69510529 T2 DE 69510529T2 DE 69510529 T DE69510529 T DE 69510529T DE 69510529 T DE69510529 T DE 69510529T DE 69510529 T2 DE69510529 T2 DE 69510529T2
Authority
DE
Germany
Prior art keywords
radiation
production method
emitting semiconductor
semiconductor diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510529T
Other languages
English (en)
Other versions
DE69510529D1 (de
Inventor
Adriaan Valster
Poorter Johannes De
Gerard Acket
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Uniphase Opto Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniphase Opto Holdings Inc filed Critical Uniphase Opto Holdings Inc
Publication of DE69510529D1 publication Critical patent/DE69510529D1/de
Application granted granted Critical
Publication of DE69510529T2 publication Critical patent/DE69510529T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3206—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures ordering or disordering the natural superlattice in ternary or quaternary materials
    • H01S5/3209—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures ordering or disordering the natural superlattice in ternary or quaternary materials disordered active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
DE69510529T 1994-10-06 1995-09-21 Strahlungsemittierende halbleiter-diode und herstellungsverfahren Expired - Fee Related DE69510529T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94202895 1994-10-06
PCT/IB1995/000775 WO1996011503A2 (en) 1994-10-06 1995-09-21 Radiation-emitting semiconductor diode and method of manufacturing such a diode

Publications (2)

Publication Number Publication Date
DE69510529D1 DE69510529D1 (de) 1999-08-05
DE69510529T2 true DE69510529T2 (de) 1999-11-25

Family

ID=8217259

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510529T Expired - Fee Related DE69510529T2 (de) 1994-10-06 1995-09-21 Strahlungsemittierende halbleiter-diode und herstellungsverfahren

Country Status (4)

Country Link
US (1) US5703894A (de)
EP (1) EP0733270B1 (de)
DE (1) DE69510529T2 (de)
WO (1) WO1996011503A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021106238A1 (de) 2021-03-15 2022-09-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10509283A (ja) * 1995-09-14 1998-09-08 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体ダイオードレーザ及びその製造方法
US6322425B1 (en) 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
JP2002185077A (ja) 2000-12-14 2002-06-28 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP3911140B2 (ja) 2001-09-05 2007-05-09 シャープ株式会社 半導体レーザの製造方法
EP1403986A1 (de) * 2002-09-25 2004-03-31 Agilent Technologies, Inc. - a Delaware corporation - Halbleiterlaservorrichtung
EP2043209B1 (de) 2007-09-28 2011-10-26 OSRAM Opto Semiconductors GmbH Kantenemittierender Halbleiterlaser mit einem Wellenleiter
DE102007062050B4 (de) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
DE102007058950A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Wellenleiter
US11038320B2 (en) * 2018-08-22 2021-06-15 Lumentum Operations Llc Semiconductor layer structure with a thick buffer layer
US11095095B2 (en) * 2018-08-27 2021-08-17 Arizona Board Of Regents On Behalf Of The University Of Arizona Low cost external cavity diode lasers
US11112555B2 (en) 2019-09-30 2021-09-07 Nichia Corporation Light-emitting module with a plurality of light guide plates and a gap therein
US11561338B2 (en) 2019-09-30 2023-01-24 Nichia Corporation Light-emitting module
JP2022150208A (ja) 2021-03-26 2022-10-07 古河電気工業株式会社 半導体レーザ素子および半導体レーザ素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
DE69132934T2 (de) * 1990-05-23 2002-08-29 Uniphase Opto Holdings Inc Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
DE69102263T2 (de) * 1991-03-11 1994-12-08 Ibm Halbleiteranordnung mit einer auf einem strukturierten Substrat aufgewachsenen Schichtstruktur.
JPH0629621A (ja) * 1992-07-09 1994-02-04 Mitsubishi Electric Corp 半導体レーザ装置
JP2827919B2 (ja) * 1994-10-11 1998-11-25 三菱電機株式会社 半導体レーザ装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021106238A1 (de) 2021-03-15 2022-09-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

Also Published As

Publication number Publication date
EP0733270A1 (de) 1996-09-25
US5703894A (en) 1997-12-30
EP0733270B1 (de) 1999-06-30
WO1996011503A2 (en) 1996-04-18
DE69510529D1 (de) 1999-08-05
WO1996011503A3 (en) 1996-06-13

Similar Documents

Publication Publication Date Title
DE69533511D1 (de) Lichtemittierende halbleitervorrichtung und herstellungsverfahren
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69838597D1 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
DE69517614D1 (de) Halbleiterdiodenlaser und dessen Herstellungsverfahren
DE69834561D1 (de) Halbleiteranordnung und herstellungsverfahren dafür
DE69430513T2 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69527330T2 (de) Halbleiteranordnung und Herstellungsverfahren
DE69733450D1 (de) Thermoelektrischer Halbleiter und Herstellungsverfahren dafür
DE69721411D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69635397D1 (de) Halbleitervorrichtung mit Chipabmessungen und Herstellungsverfahren
DE69737588D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69323127T2 (de) Halbleitervorrichtung und Herstellungsverfahren
DE69601477D1 (de) Halbleiterlaserdiode und deren Herstellungsverfahren
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69424728T2 (de) Halbleiteranordnung und zugehörige Herstellungsmethode
DE69325343D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69526543T2 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69707390D1 (de) Strahlungsemittierende halbleiterdiode und deren herstellungsverfahren
DE69420944T2 (de) Halbleitervorrichtung und herstellungsverfahren
DE69510529T2 (de) Strahlungsemittierende halbleiter-diode und herstellungsverfahren
DE69525128T2 (de) Lichtemittierende Halbleiteranordnung und Herstellungsverfahren
DE69637900D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69712541D1 (de) Halbleiterlaser und Herstellungsverfahren
DE69408248T2 (de) Bipolares Halbleiterbauelement und Herstellungsverfahren
DE69713155D1 (de) Halbleiteranordnung und herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee