DE69132934T2 - Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben - Google Patents

Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben

Info

Publication number
DE69132934T2
DE69132934T2 DE69132934T DE69132934T DE69132934T2 DE 69132934 T2 DE69132934 T2 DE 69132934T2 DE 69132934 T DE69132934 T DE 69132934T DE 69132934 T DE69132934 T DE 69132934T DE 69132934 T2 DE69132934 T2 DE 69132934T2
Authority
DE
Germany
Prior art keywords
radiation
producing
semiconductor device
same
emitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132934T
Other languages
English (en)
Other versions
DE69132934D1 (de
Inventor
Adriaan Valster
Coen Theodorus Hube Liedenbaum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Uniphase Opto Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL9001193A external-priority patent/NL9001193A/nl
Priority claimed from NL9001192A external-priority patent/NL9001192A/nl
Application filed by Uniphase Opto Holdings Inc filed Critical Uniphase Opto Holdings Inc
Application granted granted Critical
Publication of DE69132934D1 publication Critical patent/DE69132934D1/de
Publication of DE69132934T2 publication Critical patent/DE69132934T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
DE69132934T 1990-05-23 1991-05-17 Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben Expired - Fee Related DE69132934T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL9001193A NL9001193A (nl) 1990-05-23 1990-05-23 Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
NL9001192A NL9001192A (nl) 1990-05-23 1990-05-23 Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
DE69132934D1 DE69132934D1 (de) 2002-03-28
DE69132934T2 true DE69132934T2 (de) 2002-08-29

Family

ID=26646702

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132934T Expired - Fee Related DE69132934T2 (de) 1990-05-23 1991-05-17 Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben

Country Status (5)

Country Link
US (2) US5296717A (de)
EP (1) EP0458409B1 (de)
JP (1) JP3038048B2 (de)
CN (1) CN1056771A (de)
DE (1) DE69132934T2 (de)

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JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
DE4303788C2 (de) * 1993-02-10 1996-03-14 Telefunken Microelectron Lichtemittierende Diode mit einer Doppelheterostruktur aus InGaA1P
KR950004667A (ko) * 1993-07-29 1995-02-18 가나이 쯔또무 반도체레이저소자 및 그 제작방법
FR2721722B1 (fr) * 1994-06-22 1996-09-13 France Telecom Procédé de réalisation d'une matrice de composants à puits quantiques de structure verticale "tout optique".
US5814534A (en) * 1994-08-05 1998-09-29 Mitsubishi Denki Kabushiki Kaisha Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium
US5656829A (en) * 1994-08-30 1997-08-12 Showa Denko K.K. Semiconductor light emitting diode
EP0733270B1 (de) * 1994-10-06 1999-06-30 Uniphase Opto Holdings, Inc. Strahlungsemittierende halbleiter-diode und herstellungsverfahren
JPH08242037A (ja) * 1995-03-03 1996-09-17 Nec Corp 面型半導体発光素子
US5548140A (en) * 1995-06-06 1996-08-20 Hughes Aircraft Company High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
DE69707390T2 (de) * 1996-04-24 2002-06-27 Uniphase Opto Holdings Inc Strahlungsemittierende halbleiterdiode und deren herstellungsverfahren
JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3681236B2 (ja) * 1996-10-28 2005-08-10 沖電気工業株式会社 半導体装置
JPH10214993A (ja) * 1997-01-29 1998-08-11 Hitachi Cable Ltd エピタキシャルウエハおよびその製造方法並びに発光ダイオード
US6097041A (en) * 1998-08-24 2000-08-01 Kingmax Technology Inc. Light-emitting diode with anti-reflector
JP2000332362A (ja) * 1999-05-24 2000-11-30 Sony Corp 半導体装置および半導体発光素子
US6469314B1 (en) * 1999-12-21 2002-10-22 Lumileds Lighting U.S., Llc Thin multi-well active layer LED with controlled oxygen doping
US6274463B1 (en) 2000-07-31 2001-08-14 Hewlett-Packard Company Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method
JP3835260B2 (ja) * 2001-11-19 2006-10-18 株式会社日立製作所 光ディスク装置
GB0225586D0 (en) * 2002-11-02 2002-12-11 Intense Photonics Ltd Quantum well intermixing in semiconductor photonic devices
US20040227151A1 (en) * 2003-03-31 2004-11-18 Hitachi Cable, Ltd. Light emitting diode
DE102005037022A1 (de) * 2005-06-28 2007-01-04 Osram Opto Semiconductors Gmbh Strahlungsemittierender optoelektronischer Halbleiterchip mit einer Diffusionsbarriere
JP4694342B2 (ja) * 2005-10-14 2011-06-08 三菱電機株式会社 半導体レーザ装置およびその製造方法
JP5257231B2 (ja) * 2009-05-13 2013-08-07 ソニー株式会社 発光ダイオードおよびその製造方法
JP5349420B2 (ja) * 2010-08-04 2013-11-20 株式会社東芝 半導体発光素子の製造方法
US11552217B2 (en) * 2018-11-12 2023-01-10 Epistar Corporation Semiconductor device

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Publication number Priority date Publication date Assignee Title
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device
JPS5728322A (en) * 1980-07-28 1982-02-16 Fujitsu Ltd Formation of semiconductor single crystal layer
US4860068A (en) * 1982-08-13 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices and methods of making such devices
NL8301215A (nl) * 1983-04-07 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
JPS6373688A (ja) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp 半導体発光装置
US4893313A (en) * 1988-03-14 1990-01-09 Kabushiki Kaisha Toshiba Semiconductor laser device which has a double-hetero structure having an optimal layer thickness
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
US5157679A (en) * 1989-10-11 1992-10-20 Hitachi-Ltd. Optoelectronic devices

Also Published As

Publication number Publication date
US5358897A (en) 1994-10-25
CN1056771A (zh) 1991-12-04
US5296717A (en) 1994-03-22
JP3038048B2 (ja) 2000-05-08
JPH04229689A (ja) 1992-08-19
EP0458409A1 (de) 1991-11-27
EP0458409B1 (de) 2002-02-20
DE69132934D1 (de) 2002-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee