DE69230356D1 - Vorrichtung zum herstellen von halbleitern - Google Patents

Vorrichtung zum herstellen von halbleitern

Info

Publication number
DE69230356D1
DE69230356D1 DE69230356T DE69230356T DE69230356D1 DE 69230356 D1 DE69230356 D1 DE 69230356D1 DE 69230356 T DE69230356 T DE 69230356T DE 69230356 T DE69230356 T DE 69230356T DE 69230356 D1 DE69230356 D1 DE 69230356D1
Authority
DE
Germany
Prior art keywords
producing semiconductors
semiconductors
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69230356T
Other languages
English (en)
Other versions
DE69230356T2 (de
Inventor
Kazuo Semiconductor Proc Maeda
Kouichi Semiconductor Pr Ohira
Mitsuo Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcan Tech Co Inc
Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
Original Assignee
Alcan Tech Co Inc
Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcan Tech Co Inc, Semiconductor Process Laboratory Co Ltd, Canon Marketing Japan Inc filed Critical Alcan Tech Co Inc
Application granted granted Critical
Publication of DE69230356D1 publication Critical patent/DE69230356D1/de
Publication of DE69230356T2 publication Critical patent/DE69230356T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
DE69230356T 1991-02-20 1992-02-12 Vorrichtung zum herstellen von halbleitern Expired - Fee Related DE69230356T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3026293A JPH0766919B2 (ja) 1991-02-20 1991-02-20 半導体製造装置
PCT/JP1992/000137 WO1992015116A1 (en) 1991-02-20 1992-02-12 Semiconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
DE69230356D1 true DE69230356D1 (de) 2000-01-05
DE69230356T2 DE69230356T2 (de) 2000-07-06

Family

ID=12189271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69230356T Expired - Fee Related DE69230356T2 (de) 1991-02-20 1992-02-12 Vorrichtung zum herstellen von halbleitern

Country Status (5)

Country Link
US (1) US5281295A (de)
EP (1) EP0525202B1 (de)
JP (1) JPH0766919B2 (de)
DE (1) DE69230356T2 (de)
WO (1) WO1992015116A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608620B1 (de) * 1993-01-28 1996-08-14 Applied Materials, Inc. Vorrichtung für ein Vakuumverfahren mit verbessertem Durchsatz
JP3174856B2 (ja) * 1993-05-07 2001-06-11 日本エア・リキード株式会社 混合ガス供給装置
JPH0817173B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 成膜方法
JPH0817174B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 絶縁膜の改質方法
CN1171137A (zh) * 1994-11-16 1998-01-21 B·F·谷德里奇公司 压力梯度化学蒸汽渗透和沉积的设备及工艺和制品
US5855465A (en) * 1996-04-16 1999-01-05 Gasonics International Semiconductor wafer processing carousel
US5863170A (en) * 1996-04-16 1999-01-26 Gasonics International Modular process system
US5667592A (en) * 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US7476419B2 (en) * 1998-10-23 2009-01-13 Goodrich Corporation Method for measurement of weight during a CVI/CVD process
US6669988B2 (en) 2001-08-20 2003-12-30 Goodrich Corporation Hardware assembly for CVI/CVD processes
KR100450068B1 (ko) * 2001-11-23 2004-09-24 주성엔지니어링(주) Ｃｖｄ 장치의 멀티섹터 평판형 샤워헤드
US6913652B2 (en) * 2002-06-17 2005-07-05 Applied Materials, Inc. Gas flow division in a wafer processing system having multiple chambers
JP3999059B2 (ja) * 2002-06-26 2007-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP4093462B2 (ja) * 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
US7628861B2 (en) * 2004-12-17 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
WO2006020424A2 (en) * 2004-08-02 2006-02-23 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
US20090236447A1 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus for controlling gas injection in process chamber
JP6346849B2 (ja) * 2014-08-20 2018-06-20 東京エレクトロン株式会社 ガス供給系、プラズマ処理装置、及びプラズマ処理装置の運用方法
JP7033950B2 (ja) * 2018-02-19 2022-03-11 東京エレクトロン株式会社 ガス分配装置および処理装置
US11600507B2 (en) * 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5176976A (ja) * 1974-12-27 1976-07-03 Tokyo Shibaura Electric Co Kisohannosochi
JPS5980325A (ja) * 1982-10-29 1984-05-09 Fujitsu Ltd 反応ガス分配方法
JPS6063375A (ja) * 1983-09-14 1985-04-11 Canon Inc 気相法堆積膜製造装置
JPH0712088B2 (ja) * 1985-12-21 1995-02-08 キヤノン株式会社 光センサ−の連続製造装置
US4715921A (en) * 1986-10-24 1987-12-29 General Signal Corporation Quad processor
US5013385A (en) * 1986-04-18 1991-05-07 General Signal Corporation Quad processor
JPS6447872A (en) * 1987-08-19 1989-02-22 Matsushita Electronics Corp Thin film forming device
JPH0644986B2 (ja) * 1988-05-08 1994-06-15 忠弘 大見 プロセスガス供給配管装置
JPH02150040A (ja) * 1988-11-30 1990-06-08 Fujitsu Ltd 気相成長装置
EP0382985A1 (de) * 1989-02-13 1990-08-22 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Purgiervorrichtung
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
JP2696265B2 (ja) * 1990-09-28 1998-01-14 株式会社半導体プロセス研究所 半導体装置の製造装置
JPH04145623A (ja) * 1990-10-08 1992-05-19 Handotai Process Kenkyusho:Kk 半導体装置の製造方法
JPH04180226A (ja) * 1990-11-15 1992-06-26 Handotai Process Kenkyusho:Kk 半導体製造装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
EP0525202A4 (en) 1996-01-03
DE69230356T2 (de) 2000-07-06
EP0525202A1 (de) 1993-02-03
JPH05343392A (ja) 1993-12-24
US5281295A (en) 1994-01-25
WO1992015116A1 (en) 1992-09-03
JPH0766919B2 (ja) 1995-07-19
EP0525202B1 (de) 1999-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee