JPS6447872A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPS6447872A
JPS6447872A JP20412287A JP20412287A JPS6447872A JP S6447872 A JPS6447872 A JP S6447872A JP 20412287 A JP20412287 A JP 20412287A JP 20412287 A JP20412287 A JP 20412287A JP S6447872 A JPS6447872 A JP S6447872A
Authority
JP
Japan
Prior art keywords
reactive gas
reaction
thin film
contg
way valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20412287A
Other languages
Japanese (ja)
Inventor
Akira Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP20412287A priority Critical patent/JPS6447872A/en
Publication of JPS6447872A publication Critical patent/JPS6447872A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas

Abstract

PURPOSE:To stably maintain the clear atmosphere in the reaction chamber and gas pipeline by connecting the outlet of a reactive gas flow controller to a vent line through the outlet side of a three-way valve at the inlet to the reaction chamber. CONSTITUTION:A first reactive gas contg. Si and a second reactive gas contg. NH3, etc., are supplied to a reaction furnace 13 respectively through mass flow controllers 11 and 12, and subjected to a reaction under specified conditions to form the thin film of Si3N4, etc. In the thin film forming device, the three-way valve 4 is provided between an outlet valve 1 of the main flow controller 11 and the reaction furnace 13. The outlet side of the three-way valve 4 is further connected to the position between vacuum valves 14 and 15 and vacuum pumps 16 and 17 by the vent line through an openable and closable air valve 25. By this method, the reactive gas line can be purged with N2 independent of the reaction vessel 13, the back flow of the second reactive gas capable of forming an active species into the Si-contg. gas line is prevented, and a clean reaction atmosphere is surely realized.
JP20412287A 1987-08-19 1987-08-19 Thin film forming device Pending JPS6447872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20412287A JPS6447872A (en) 1987-08-19 1987-08-19 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20412287A JPS6447872A (en) 1987-08-19 1987-08-19 Thin film forming device

Publications (1)

Publication Number Publication Date
JPS6447872A true JPS6447872A (en) 1989-02-22

Family

ID=16485185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20412287A Pending JPS6447872A (en) 1987-08-19 1987-08-19 Thin film forming device

Country Status (1)

Country Link
JP (1) JPS6447872A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461645A (en) * 1987-09-01 1989-03-08 Yasuda Susumu Dangerous harmful gas detecting method
JPH0250421A (en) * 1988-08-12 1990-02-20 Nec Corp Gas feeder
WO1992015116A1 (en) * 1991-02-20 1992-09-03 Semiconductor Process Laboratory Co., Ltd. Semiconductor manufacturing equipment
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
JPH101776A (en) * 1996-06-10 1998-01-06 Canon Inc Gas supplying method and supplying device of apparatus for producing semiconductor
KR100474984B1 (en) * 1997-05-31 2005-04-14 삼성전자주식회사 Apparatus for manufacturing semiconductor device
JP2010533066A (en) * 2007-07-10 2010-10-21 イノヴァライト インコーポレイテッド Method and apparatus for generating group IV nanoparticles in a flow-through plasma reactor
DE19920332B4 (en) * 1998-05-04 2010-10-21 Infineon Technologies Ag Process reactor for the treatment of semiconductor substrates and method for carrying out a process
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
JP2015010247A (en) * 2013-06-27 2015-01-19 株式会社日立国際電気 Production method of semiconductor device, substrate processing device and substrate processing program
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461645A (en) * 1987-09-01 1989-03-08 Yasuda Susumu Dangerous harmful gas detecting method
JPH0250421A (en) * 1988-08-12 1990-02-20 Nec Corp Gas feeder
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
WO1992015116A1 (en) * 1991-02-20 1992-09-03 Semiconductor Process Laboratory Co., Ltd. Semiconductor manufacturing equipment
US5281295A (en) * 1991-02-20 1994-01-25 Semiconductor Process Laboratory Co., Ltd. Semiconductor fabrication equipment
JPH101776A (en) * 1996-06-10 1998-01-06 Canon Inc Gas supplying method and supplying device of apparatus for producing semiconductor
KR100474984B1 (en) * 1997-05-31 2005-04-14 삼성전자주식회사 Apparatus for manufacturing semiconductor device
DE19920332B4 (en) * 1998-05-04 2010-10-21 Infineon Technologies Ag Process reactor for the treatment of semiconductor substrates and method for carrying out a process
JP2010533066A (en) * 2007-07-10 2010-10-21 イノヴァライト インコーポレイテッド Method and apparatus for generating group IV nanoparticles in a flow-through plasma reactor
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
JP2015010247A (en) * 2013-06-27 2015-01-19 株式会社日立国際電気 Production method of semiconductor device, substrate processing device and substrate processing program

Similar Documents

Publication Publication Date Title
JPS6447872A (en) Thin film forming device
EP0751301A3 (en) Fluid control apparatus
JPS5654947A (en) Intake and egr controller for diesel engine
JPS5788250A (en) Controller for air-fuel ratio of engine
JPS5779247A (en) Exhaust gas recirculating equipment
JPS5523360A (en) Discharge gas control device
JPS5634935A (en) Exhaust gas purifier for engine
JPS5510018A (en) Catalyzer converter
JPS5672250A (en) Controller for exhaust gas recirculation in engine
JPS57146041A (en) Control device for exhaust gas reflux quantity
JPS57108449A (en) Exhaust gas recirculation system controller for diesel engine
JPS57128830A (en) Dust densitometer
JPS6246432Y2 (en)
JPS5620752A (en) Recirculator for exhaust gas
FR2461054B1 (en)
JPS6458697A (en) Oil feeder with gas sensor
JPS57191439A (en) Flow rate controlling device for recirculating exhaust gas
JPS5664141A (en) Air fuel ratio controller
JPS54106721A (en) Compound valve apparatus
JPS5512232A (en) Method of feeding air to rotary engine combustion chamber
JPS56162256A (en) Exhaust gas recirculating device of engine
JPS56115842A (en) Exhaust gas recirculating device
JPS56138433A (en) Reducing device of harmful exhaust from diesel engine
JPS5779229A (en) Apparatus for controlling engine output
JPS56101050A (en) Exhaust gas recirculating device for diesel engine