DE69004842D1 - Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung. - Google Patents

Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung.

Info

Publication number
DE69004842D1
DE69004842D1 DE90200679T DE69004842T DE69004842D1 DE 69004842 D1 DE69004842 D1 DE 69004842D1 DE 90200679 T DE90200679 T DE 90200679T DE 69004842 T DE69004842 T DE 69004842T DE 69004842 D1 DE69004842 D1 DE 69004842D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
radiation
producing
emitting semiconductor
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90200679T
Other languages
English (en)
Other versions
DE69004842T2 (de
Inventor
Adriaan Valster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE69004842D1 publication Critical patent/DE69004842D1/de
Publication of DE69004842T2 publication Critical patent/DE69004842T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
DE69004842T 1989-03-28 1990-03-22 Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung. Expired - Fee Related DE69004842T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8900748A NL8900748A (nl) 1989-03-28 1989-03-28 Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
DE69004842D1 true DE69004842D1 (de) 1994-01-13
DE69004842T2 DE69004842T2 (de) 1994-06-01

Family

ID=19854361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69004842T Expired - Fee Related DE69004842T2 (de) 1989-03-28 1990-03-22 Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung.

Country Status (6)

Country Link
US (1) US5381024A (de)
EP (1) EP0390262B1 (de)
JP (1) JP3093234B2 (de)
KR (1) KR900015361A (de)
DE (1) DE69004842T2 (de)
NL (1) NL8900748A (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
DE69312799T2 (de) * 1992-05-18 1998-02-12 Philips Electronics Nv Optoelektronische Halbleiteranordnung
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JPH07162089A (ja) * 1993-12-13 1995-06-23 Mitsubishi Electric Corp 可視光レーザダイオード及びその製造方法
DE59510543D1 (de) * 1994-11-17 2003-03-06 Infineon Technologies Ag Verfahren zur Befestigung eines ersten Substrates auf einem zweiten Substrat und Verwendung des Verfahrens zur Herstellung einer dreidimensionalen Schaltungsanordnung
WO1996033537A2 (en) * 1995-04-19 1996-10-24 Philips Electronics N.V. Method of manufacturing an optoelectronic semiconductor device, in particular a semiconductor diode laser
EP0846342A1 (de) * 1996-06-24 1998-06-10 Koninklijke Philips Electronics N.V. Strahlungsemittierende halbleiter-diodeund herstellungsverfahren
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region
KR100239473B1 (ko) * 1997-08-20 2000-02-01 구자홍 레이저 다이오드 및 그 제조방법
JPH11135834A (ja) 1997-10-27 1999-05-21 Matsushita Electric Ind Co Ltd 発光ダイオード装置及びその製造方法
JP2001015851A (ja) * 1999-07-01 2001-01-19 Sony Corp 半導体レーザ素子及びその作製方法
US7049761B2 (en) 2000-02-11 2006-05-23 Altair Engineering, Inc. Light tube and power supply circuit
JP2001291895A (ja) * 2000-04-06 2001-10-19 Sharp Corp 半導体発光素子
JP4599687B2 (ja) * 2000-08-08 2010-12-15 ソニー株式会社 レーザダイオード、半導体発光装置および製造方法
JP2002204032A (ja) * 2000-10-31 2002-07-19 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2009188435A (ja) * 2003-11-11 2009-08-20 Sharp Corp 半導体レーザ素子およびその製造方法および光ディスク装置および光伝送システム
JP4885434B2 (ja) * 2003-11-27 2012-02-29 シャープ株式会社 半導体レーザ素子、光ディスク装置および光伝送システム
JP2005175450A (ja) * 2003-11-21 2005-06-30 Sharp Corp 化合物半導体装置およびその製造方法、ならびにその化合物半導体装置を備えた光ディスク装置
JP4884698B2 (ja) * 2005-04-27 2012-02-29 シャープ株式会社 半導体装置の製造方法、半導体レーザ装置、光伝送モジュールおよび光ディスク装置
JP2007049088A (ja) * 2005-08-12 2007-02-22 Rohm Co Ltd 高出力赤色半導体レーザ
US8118447B2 (en) 2007-12-20 2012-02-21 Altair Engineering, Inc. LED lighting apparatus with swivel connection
US7712918B2 (en) 2007-12-21 2010-05-11 Altair Engineering , Inc. Light distribution using a light emitting diode assembly
US8360599B2 (en) 2008-05-23 2013-01-29 Ilumisys, Inc. Electric shock resistant L.E.D. based light
US7976196B2 (en) 2008-07-09 2011-07-12 Altair Engineering, Inc. Method of forming LED-based light and resulting LED-based light
US7946729B2 (en) 2008-07-31 2011-05-24 Altair Engineering, Inc. Fluorescent tube replacement having longitudinally oriented LEDs
US8674626B2 (en) 2008-09-02 2014-03-18 Ilumisys, Inc. LED lamp failure alerting system
US8256924B2 (en) 2008-09-15 2012-09-04 Ilumisys, Inc. LED-based light having rapidly oscillating LEDs
US8901823B2 (en) 2008-10-24 2014-12-02 Ilumisys, Inc. Light and light sensor
US7938562B2 (en) 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
US8653984B2 (en) 2008-10-24 2014-02-18 Ilumisys, Inc. Integration of LED lighting control with emergency notification systems
US8444292B2 (en) 2008-10-24 2013-05-21 Ilumisys, Inc. End cap substitute for LED-based tube replacement light
US8214084B2 (en) 2008-10-24 2012-07-03 Ilumisys, Inc. Integration of LED lighting with building controls
US8324817B2 (en) 2008-10-24 2012-12-04 Ilumisys, Inc. Light and light sensor
US8556452B2 (en) 2009-01-15 2013-10-15 Ilumisys, Inc. LED lens
US8362710B2 (en) 2009-01-21 2013-01-29 Ilumisys, Inc. Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays
US8664880B2 (en) 2009-01-21 2014-03-04 Ilumisys, Inc. Ballast/line detection circuit for fluorescent replacement lamps
US8330381B2 (en) 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8299695B2 (en) 2009-06-02 2012-10-30 Ilumisys, Inc. Screw-in LED bulb comprising a base having outwardly projecting nodes
US8421366B2 (en) 2009-06-23 2013-04-16 Ilumisys, Inc. Illumination device including LEDs and a switching power control system
US8540401B2 (en) 2010-03-26 2013-09-24 Ilumisys, Inc. LED bulb with internal heat dissipating structures
WO2011119921A2 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Led light with thermoelectric generator
CA2794512A1 (en) 2010-03-26 2011-09-29 David L. Simon Led light tube with dual sided light distribution
US8454193B2 (en) 2010-07-08 2013-06-04 Ilumisys, Inc. Independent modules for LED fluorescent light tube replacement
US8596813B2 (en) 2010-07-12 2013-12-03 Ilumisys, Inc. Circuit board mount for LED light tube
US8523394B2 (en) 2010-10-29 2013-09-03 Ilumisys, Inc. Mechanisms for reducing risk of shock during installation of light tube
US8870415B2 (en) 2010-12-09 2014-10-28 Ilumisys, Inc. LED fluorescent tube replacement light with reduced shock hazard
JP5792486B2 (ja) * 2011-03-18 2015-10-14 株式会社東芝 半導体発光素子および光結合装置
WO2013028965A2 (en) 2011-08-24 2013-02-28 Ilumisys, Inc. Circuit board mount for led light
US9184518B2 (en) 2012-03-02 2015-11-10 Ilumisys, Inc. Electrical connector header for an LED-based light
US9163794B2 (en) 2012-07-06 2015-10-20 Ilumisys, Inc. Power supply assembly for LED-based light tube
US9271367B2 (en) 2012-07-09 2016-02-23 Ilumisys, Inc. System and method for controlling operation of an LED-based light
US9285084B2 (en) 2013-03-14 2016-03-15 Ilumisys, Inc. Diffusers for LED-based lights
US9267650B2 (en) 2013-10-09 2016-02-23 Ilumisys, Inc. Lens for an LED-based light
CA2937642A1 (en) 2014-01-22 2015-07-30 Ilumisys, Inc. Led-based light with addressed leds
US9510400B2 (en) 2014-05-13 2016-11-29 Ilumisys, Inc. User input systems for an LED-based light
US10161568B2 (en) 2015-06-01 2018-12-25 Ilumisys, Inc. LED-based light with canted outer walls

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2856507A1 (de) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In Halbleiter-laserdiode
JPS58219789A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd 埋込み型光半導体装置
US4427841A (en) * 1982-06-29 1984-01-24 The United States Of America As Represented By The Secretary Of The Air Force Back barrier heteroface AlGaAs solar cell
DE3234389C2 (de) * 1982-09-16 1995-03-09 Siemens Ag Halbleiter-Laserdiode
JPS59165474A (ja) * 1983-03-10 1984-09-18 Nec Corp 半導体発光素子
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
JPH0722213B2 (ja) * 1985-06-12 1995-03-08 三洋電機株式会社 半導体レーザ
US4905057A (en) * 1985-12-18 1990-02-27 Hitachi, Ltd. Semiconductor devices
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
DE3782232T2 (de) * 1986-12-22 1993-02-25 Nec Corp Pnpn-thyristor.
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子
US4773945A (en) * 1987-09-14 1988-09-27 Ga Technologies, Inc. Solar cell with low infra-red absorption and method of manufacture
JPH01235397A (ja) * 1988-03-16 1989-09-20 Mitsubishi Electric Corp 半導体レーザ

Also Published As

Publication number Publication date
EP0390262A1 (de) 1990-10-03
DE69004842T2 (de) 1994-06-01
KR900015361A (ko) 1990-10-26
US5381024A (en) 1995-01-10
EP0390262B1 (de) 1993-12-01
JP3093234B2 (ja) 2000-10-03
NL8900748A (nl) 1990-10-16
JPH02281785A (ja) 1990-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee