DE3772490D1 - Halbleiteranordnung sowie verfahren zum herstellen und testen derselben. - Google Patents
Halbleiteranordnung sowie verfahren zum herstellen und testen derselben.Info
- Publication number
- DE3772490D1 DE3772490D1 DE8787306951T DE3772490T DE3772490D1 DE 3772490 D1 DE3772490 D1 DE 3772490D1 DE 8787306951 T DE8787306951 T DE 8787306951T DE 3772490 T DE3772490 T DE 3772490T DE 3772490 D1 DE3772490 D1 DE 3772490D1
- Authority
- DE
- Germany
- Prior art keywords
- testing
- producing
- same
- semiconductor arrangement
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61185715A JPS6341041A (ja) | 1986-08-06 | 1986-08-06 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3772490D1 true DE3772490D1 (de) | 1991-10-02 |
Family
ID=16175583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787306951T Expired - Lifetime DE3772490D1 (de) | 1986-08-06 | 1987-08-05 | Halbleiteranordnung sowie verfahren zum herstellen und testen derselben. |
Country Status (4)
Country | Link |
---|---|
US (3) | US4926234A (de) |
EP (1) | EP0257870B1 (de) |
JP (1) | JPS6341041A (de) |
DE (1) | DE3772490D1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6341041A (ja) * | 1986-08-06 | 1988-02-22 | Mitsubishi Electric Corp | 半導体装置 |
US5008727A (en) * | 1988-01-22 | 1991-04-16 | Matsushita Electric Industrial Co., Ltd. | Standard cell having test pad for probing and semiconductor integrated circuit device containing the standard cells |
US5252507A (en) * | 1990-03-30 | 1993-10-12 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
US5315130A (en) * | 1990-03-30 | 1994-05-24 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
JPH0434950A (ja) * | 1990-05-30 | 1992-02-05 | Nec Corp | 半導体集積回路装置 |
JPH04256909A (ja) * | 1991-02-12 | 1992-09-11 | Matsushita Electric Ind Co Ltd | ビデオカメラ用ズームレンズのフォーカス機構 |
JP3124085B2 (ja) * | 1991-12-02 | 2001-01-15 | 沖電気工業株式会社 | 半導体装置 |
US5268636A (en) * | 1992-03-10 | 1993-12-07 | The United States Of America As Represented By The Secretary Of Commerce | MMIC package and interconnect test fixture |
US5286656A (en) * | 1992-11-02 | 1994-02-15 | National Semiconductor Corporation | Individualized prepackage AC performance testing of IC dies on a wafer using DC parametric test patterns |
US5457399A (en) * | 1992-12-14 | 1995-10-10 | Hughes Aircraft Company | Microwave monolithic integrated circuit fabrication, test method and test probes |
JPH07221223A (ja) * | 1994-02-03 | 1995-08-18 | Mitsubishi Electric Corp | 半導体装置,及び混成集積回路装置 |
US5650666A (en) * | 1995-11-22 | 1997-07-22 | Cypress Semiconductor Corp. | Method and apparatus for preventing cracks in semiconductor die |
FR2790096B1 (fr) * | 1999-02-18 | 2001-04-13 | St Microelectronics Sa | Structure etalon elementaire a faibles pertes pour l'etalonnage d'une sonde de circuit integre |
JP4536942B2 (ja) | 2001-02-09 | 2010-09-01 | 三菱電機株式会社 | 高周波用集積回路及びこれを用いた高周波回路装置 |
JP4804643B2 (ja) * | 2001-05-08 | 2011-11-02 | 三菱電機株式会社 | 高周波回路装置とその製造方法 |
JP2005331298A (ja) * | 2004-05-18 | 2005-12-02 | Mitsubishi Electric Corp | 高周波回路の特性測定方法及び校正用パターンならびに校正用治具 |
JP4612431B2 (ja) * | 2005-02-24 | 2011-01-12 | 三菱電機株式会社 | 高周波半導体装置 |
KR100819561B1 (ko) * | 2007-01-12 | 2008-04-08 | 삼성전자주식회사 | 반도체 장치 및 이 장치의 신호 종단 방법 |
JP6544160B2 (ja) * | 2015-09-09 | 2019-07-17 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3679941A (en) * | 1969-09-22 | 1972-07-25 | Gen Electric | Composite integrated circuits including semiconductor chips mounted on a common substrate with connections made through a dielectric encapsulator |
US3691628A (en) * | 1969-10-31 | 1972-09-19 | Gen Electric | Method of fabricating composite integrated circuits |
JPS5268376A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor device |
JPS5698875A (en) * | 1980-01-07 | 1981-08-08 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor device |
US4566184A (en) * | 1981-08-24 | 1986-01-28 | Rockwell International Corporation | Process for making a probe for high speed integrated circuits |
JPS58157151A (ja) * | 1982-03-15 | 1983-09-19 | Mitsubishi Electric Corp | 半導体集積回路装置 |
DE3382183D1 (de) * | 1982-12-23 | 1991-04-04 | Sumitomo Electric Industries | Monolithische integrierte mikrowellenschaltung und verfahren zum auswaehlen derselben. |
FR2565030B1 (fr) * | 1984-05-25 | 1986-08-22 | Thomson Csf | Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure |
JP2568495B2 (ja) * | 1985-10-21 | 1997-01-08 | 三菱電機株式会社 | 半導体装置 |
JPS6341041A (ja) * | 1986-08-06 | 1988-02-22 | Mitsubishi Electric Corp | 半導体装置 |
-
1986
- 1986-08-06 JP JP61185715A patent/JPS6341041A/ja active Granted
-
1987
- 1987-08-03 US US07/081,709 patent/US4926234A/en not_active Expired - Lifetime
- 1987-08-05 EP EP87306951A patent/EP0257870B1/de not_active Expired
- 1987-08-05 DE DE8787306951T patent/DE3772490D1/de not_active Expired - Lifetime
-
1989
- 1989-10-26 US US07/426,926 patent/US5051810A/en not_active Expired - Lifetime
-
1990
- 1990-04-24 US US07/513,642 patent/US5010019A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5051810A (en) | 1991-09-24 |
EP0257870B1 (de) | 1991-08-28 |
US4926234A (en) | 1990-05-15 |
EP0257870A3 (en) | 1988-11-30 |
US5010019A (en) | 1991-04-23 |
JPH0528903B2 (de) | 1993-04-27 |
EP0257870A2 (de) | 1988-03-02 |
JPS6341041A (ja) | 1988-02-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: PRUFER & PARTNER GBR, 81545 MUENCHEN |