DE3782232T2 - Pnpn-thyristor. - Google Patents

Pnpn-thyristor.

Info

Publication number
DE3782232T2
DE3782232T2 DE8787118935T DE3782232T DE3782232T2 DE 3782232 T2 DE3782232 T2 DE 3782232T2 DE 8787118935 T DE8787118935 T DE 8787118935T DE 3782232 T DE3782232 T DE 3782232T DE 3782232 T2 DE3782232 T2 DE 3782232T2
Authority
DE
Germany
Prior art keywords
pnpn thyristor
pnpn
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787118935T
Other languages
English (en)
Other versions
DE3782232D1 (de
Inventor
Kenichi Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30703386A external-priority patent/JPH079997B2/ja
Priority claimed from JP62010815A external-priority patent/JPH0666523B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3782232D1 publication Critical patent/DE3782232D1/de
Application granted granted Critical
Publication of DE3782232T2 publication Critical patent/DE3782232T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Thyristors (AREA)
  • Led Devices (AREA)
DE8787118935T 1986-12-22 1987-12-21 Pnpn-thyristor. Expired - Fee Related DE3782232T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30703386A JPH079997B2 (ja) 1986-12-22 1986-12-22 ｐｎｐｎ光サイリスタ
JP62010815A JPH0666523B2 (ja) 1987-01-20 1987-01-20 半導体光メモリ

Publications (2)

Publication Number Publication Date
DE3782232D1 DE3782232D1 (de) 1992-11-19
DE3782232T2 true DE3782232T2 (de) 1993-02-25

Family

ID=26346154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787118935T Expired - Fee Related DE3782232T2 (de) 1986-12-22 1987-12-21 Pnpn-thyristor.

Country Status (4)

Country Link
US (1) US4829357A (de)
EP (1) EP0273344B1 (de)
CA (1) CA1271549A (de)
DE (1) DE3782232T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972238A (en) * 1987-12-08 1990-11-20 Kabushiki Kaisha Toshiba Semiconductor laser device
EP0335553B1 (de) * 1988-03-18 1999-09-15 Nippon Sheet Glass Co., Ltd. Selbstabtastende Anordnung von lichtemittierenden Bauelementen
JP2666418B2 (ja) * 1988-10-25 1997-10-22 日本電気株式会社 ｐｎｐｎ構造体の駆動方法
US5047810A (en) * 1989-01-09 1991-09-10 At&T Bell Laboratories Optically controlled resonant tunneling electronic devices
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
EP0410695B1 (de) * 1989-07-25 2001-10-24 Nippon Sheet Glass Co., Ltd. Lichtemittierende Vorrichtung
US5204871A (en) * 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
US5136353A (en) * 1990-05-10 1992-08-04 The University Of Colorado Foundation, Inc. Optical switch
USRE35442E (en) * 1990-07-06 1997-02-04 Sgs-Thomson Microelectronics, S.R.L. Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof
US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
US5291041A (en) * 1993-03-01 1994-03-01 The United States Of America As Represented By The Secretary Of The Army AlGaAs/GaAs thyristor
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
JPH11150334A (ja) * 1997-11-14 1999-06-02 Sony Corp 半導体発光素子
US6229161B1 (en) * 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6462359B1 (en) 2001-03-22 2002-10-08 T-Ram, Inc. Stability in thyristor-based memory device
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US6891205B1 (en) 2001-03-22 2005-05-10 T-Ram, Inc. Stability in thyristor-based memory device
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
WO2002082504A2 (en) * 2001-04-05 2002-10-17 T-Ram, Inc. Data restore in thyristor-based memory
US6666481B1 (en) 2002-10-01 2003-12-23 T-Ram, Inc. Shunt connection to emitter
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US6944051B1 (en) 2003-10-29 2005-09-13 T-Ram, Inc. Data restore in thryistor based memory devices
US7304327B1 (en) * 2003-11-12 2007-12-04 T-Ram Semiconductor, Inc. Thyristor circuit and approach for temperature stability
US7558307B2 (en) * 2004-02-16 2009-07-07 Sharp Kabushiki Kaisha Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
US7560739B2 (en) * 2004-06-29 2009-07-14 Intel Corporation Micro or below scale multi-layered heterostructure
JP4595012B2 (ja) * 2008-03-26 2010-12-08 株式会社沖データ 半導体発光装置、光プリントヘッド、および画像形成装置
US9059362B2 (en) * 2011-08-30 2015-06-16 Fuji Xerox Co., Ltd. Light emitting element, light emitting element array, optical writing head, and image forming apparatus
CN105849876B (zh) * 2014-01-24 2019-10-18 英特尔公司 基于鳍状物的半导体器件和方法
WO2017138778A1 (ko) * 2016-02-12 2017-08-17 엘지이노텍(주) 반도체 소자
RU2726382C1 (ru) * 2019-12-26 2020-07-13 Акционерное общество "НИИ "Полюс" им. М.Ф. Стельмаха" (АО "НИИ "Полюс" им. М.Ф. Стельмаха") Лазер-тиристор
CN114361288A (zh) * 2022-01-04 2022-04-15 中国工程物理研究院流体物理研究所 一种大功率碳化硅基光触发多门极半导体开关芯片
PL442428A1 (pl) 2022-09-30 2024-04-02 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316156A (en) * 1979-07-12 1982-02-16 Xerox Corporation Optical repeater integrated lasers
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser
US4512022A (en) * 1982-07-13 1985-04-16 At&T Bell Laboratories Semiconductor laser having graded index waveguide
JPS6079786A (ja) * 1983-10-06 1985-05-07 Nec Corp 双安定レ−ザ

Also Published As

Publication number Publication date
CA1271549A (en) 1990-07-10
EP0273344B1 (de) 1992-10-14
EP0273344A1 (de) 1988-07-06
US4829357A (en) 1989-05-09
DE3782232D1 (de) 1992-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee