DE3588041D1 - Lichtlöschbare Thyristor-Vorrichtung. - Google Patents
Lichtlöschbare Thyristor-Vorrichtung.Info
- Publication number
- DE3588041D1 DE3588041D1 DE3588041T DE3588041T DE3588041D1 DE 3588041 D1 DE3588041 D1 DE 3588041D1 DE 3588041 T DE3588041 T DE 3588041T DE 3588041 T DE3588041 T DE 3588041T DE 3588041 D1 DE3588041 D1 DE 3588041D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- thyristor device
- erasable
- erasable thyristor
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59054937A JPH0779159B2 (ja) | 1984-03-22 | 1984-03-22 | 光トリガ・光クエンチ可能なサイリスタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3588041D1 true DE3588041D1 (de) | 1995-08-24 |
DE3588041T2 DE3588041T2 (de) | 1996-01-18 |
Family
ID=12984544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3588041T Expired - Fee Related DE3588041T2 (de) | 1984-03-22 | 1985-03-21 | Lichtlöschbare Thyristor-Vorrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5017991A (de) |
EP (1) | EP0158186B1 (de) |
JP (1) | JPH0779159B2 (de) |
CA (1) | CA1302521C (de) |
DE (1) | DE3588041T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2659931B2 (ja) | 1985-06-29 | 1997-09-30 | 財団法人 半導体研究振興会 | 光制御電力変換装置 |
CH670528A5 (de) * | 1986-03-20 | 1989-06-15 | Bbc Brown Boveri & Cie | |
JPS6384066A (ja) * | 1986-09-26 | 1988-04-14 | Semiconductor Res Found | 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法 |
US5814841A (en) * | 1988-03-18 | 1998-09-29 | Nippon Sheet Glass Co., Ltd. | Self-scanning light-emitting array |
DE58903790D1 (de) * | 1988-08-19 | 1993-04-22 | Asea Brown Boveri | Abschaltbares halbleiterbauelement. |
JPH02109366A (ja) * | 1988-10-18 | 1990-04-23 | Yazaki Corp | 集積化光トリガ・光クエンチ静電誘導サイリスタ |
JPH0723968Y2 (ja) * | 1989-06-26 | 1995-05-31 | 矢崎総業株式会社 | 集積化光トリガ・光クエンチ静電誘導サイリスタ |
EP0450082B1 (de) * | 1989-08-31 | 2004-04-28 | Denso Corporation | Bipolarer transistor mit isolierter steuerelektrode |
JPH04115992U (ja) * | 1991-03-28 | 1992-10-15 | 新明和工業株式会社 | 貨物自動車の荷箱 |
JP3023858B2 (ja) * | 1991-03-29 | 2000-03-21 | 矢崎総業株式会社 | 光静電誘導サイリスタの駆動回路 |
JPH0793426B2 (ja) * | 1992-04-07 | 1995-10-09 | 東洋電機製造株式会社 | 静電誘導バッファ構造を有する半導体素子 |
JPH0779147A (ja) * | 1993-07-12 | 1995-03-20 | Yazaki Corp | 光siサイリスタ駆動回路及びその保護回路 |
CN1191394A (zh) * | 1997-02-20 | 1998-08-26 | 杨泰和 | 藉前置光-电转换元件驱动的绝缘栅双极晶体管 |
US6154477A (en) * | 1997-05-13 | 2000-11-28 | Berkeley Research Associates, Inc. | On-board laser-triggered multi-layer semiconductor power switch |
US6218682B1 (en) * | 1997-09-19 | 2001-04-17 | Optiswitch Technology Corporation | Optically controlled thyristor |
DE19909105A1 (de) | 1999-03-02 | 2000-09-14 | Siemens Ag | Symmetrischer Thyristor mit verringerter Dicke und Herstellungsverfahren dafür |
US7075593B2 (en) * | 2003-03-26 | 2006-07-11 | Video Display Corporation | Electron-beam-addressed active-matrix spatial light modulator |
US7057214B2 (en) * | 2003-07-01 | 2006-06-06 | Optiswitch Technology Corporation | Light-activated semiconductor switches |
US7582917B2 (en) * | 2006-03-10 | 2009-09-01 | Bae Systems Information And Electronic Systems Integration Inc. | Monolithically integrated light-activated thyristor and method |
US8536617B2 (en) * | 2011-12-16 | 2013-09-17 | General Electric Company | Optically triggered semiconductor device and method for making the same |
JP2012109601A (ja) * | 2012-02-01 | 2012-06-07 | Ngk Insulators Ltd | 半導体装置 |
US9633998B2 (en) | 2012-09-13 | 2017-04-25 | General Electric Company | Semiconductor device and method for making the same |
US9735189B2 (en) * | 2015-01-15 | 2017-08-15 | Hoon Kim | Image sensor with solar cell function and electronic device thereof |
US10056372B2 (en) * | 2016-03-15 | 2018-08-21 | Ideal Power Inc. | Double-base-connected bipolar transistors with passive components preventing accidental turn-on |
CN105811963B (zh) * | 2016-03-16 | 2019-01-01 | 西安电炉研究所有限公司 | 电子放大式晶闸管驱动器及其控制方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3708672A (en) * | 1971-03-29 | 1973-01-02 | Honeywell Inf Systems | Solid state relay using photo-coupled isolators |
JPS5320885A (en) * | 1976-08-11 | 1978-02-25 | Semiconductor Res Found | Electrostatic induction type semiconductor device |
JPS5437461A (en) * | 1977-08-29 | 1979-03-19 | Hitachi Ltd | Optical coupling switch circuit |
JPS54112157A (en) * | 1978-02-23 | 1979-09-01 | Hitachi Ltd | Control circuit for field effect thyristor |
JPS5524406A (en) * | 1978-08-09 | 1980-02-21 | Hitachi Ltd | Photosemiconductor switch circuit |
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
JPS55128870A (en) * | 1979-03-26 | 1980-10-06 | Semiconductor Res Found | Electrostatic induction thyristor and semiconductor device |
JPS55151825A (en) * | 1979-05-15 | 1980-11-26 | Mitsubishi Electric Corp | Electromagnetic wave coupled semiconductor switch device |
DE2922301C2 (de) * | 1979-05-31 | 1985-04-25 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung |
US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
JPS5640537A (en) * | 1979-09-12 | 1981-04-16 | Toyoda Gosei Co Ltd | Vulcanization of tubular body |
JPS60819B2 (ja) * | 1979-09-28 | 1985-01-10 | 株式会社日立製作所 | 半導体スイツチ回路 |
JPS57183128A (en) * | 1981-05-06 | 1982-11-11 | Hitachi Ltd | Optically driven electronic switch |
JPH077844B2 (ja) * | 1981-11-30 | 1995-01-30 | 財団法人半導体研究振興会 | 静電誘導型半導体光電変換装置 |
JPS5940576A (ja) * | 1982-08-30 | 1984-03-06 | Junichi Nishizawa | フオトサイリスタ |
-
1984
- 1984-03-22 JP JP59054937A patent/JPH0779159B2/ja not_active Expired - Fee Related
-
1985
- 1985-03-21 CA CA000477143A patent/CA1302521C/en not_active Expired - Lifetime
- 1985-03-21 DE DE3588041T patent/DE3588041T2/de not_active Expired - Fee Related
- 1985-03-21 EP EP85103311A patent/EP0158186B1/de not_active Expired - Lifetime
-
1988
- 1988-10-14 US US07/259,438 patent/US5017991A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0158186A3 (en) | 1988-06-22 |
DE3588041T2 (de) | 1996-01-18 |
CA1302521C (en) | 1992-06-02 |
JPH0779159B2 (ja) | 1995-08-23 |
EP0158186B1 (de) | 1995-07-19 |
JPS60198779A (ja) | 1985-10-08 |
US5017991A (en) | 1991-05-21 |
EP0158186A2 (de) | 1985-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |