PL442428A1 - Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora - Google Patents

Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora

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Publication number
PL442428A1
PL442428A1 PL442428A PL44242822A PL442428A1 PL 442428 A1 PL442428 A1 PL 442428A1 PL 442428 A PL442428 A PL 442428A PL 44242822 A PL44242822 A PL 44242822A PL 442428 A1 PL442428 A1 PL 442428A1
Authority
PL
Poland
Prior art keywords
layer
thyristor
type conductivity
counting
electrically connected
Prior art date
Application number
PL442428A
Other languages
English (en)
Inventor
Grzegorz Muzioł
Marcin Siekacz
Mateusz HAJDEL
Artem BERCHA
Czesław Skierbiszewski
Original Assignee
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Wysokich Ciśnień Polskiej Akademii Nauk filed Critical Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority to PL442428A priority Critical patent/PL442428A1/pl
Priority to EP23199813.9A priority patent/EP4345919A1/en
Publication of PL442428A1 publication Critical patent/PL442428A1/pl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1278—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising nitrides, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3822—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thyristors (AREA)

Abstract

Tyrystor zawiera półprzewodnikową warstwową strukturę epitaksjalną (2-6), wykonaną z azotków metali III grupy i naniesioną na podłoże krystaliczne (1), oraz pierwszy (7) i drugi terminal prądowy (8). W strukturze tej (2-6) pierwszą warstwą, licząc od wspomnianego podłoża krystalicznego (1), jest dolna warstwa (2) o przewodnictwie typu n, połączona elektrycznie z drugim terminalem prądowym (8), a ostatnią warstwą w tej strukturze jest górna warstwa o przewodnictwie typu p, połączona elektrycznie z pierwszym terminalem prądowym (7). Pomiędzy dolną warstwą (2) o przewodnictwie typu n i górną warstwą o (6) przewodnictwie typu p znajduje się zespół trzech warstw (3-5), który tworzą, licząc od podłoża krystalicznego (1), dolna warstwa niedomieszkowana (3), warstwa wytwarzająca ładunki piezoelektryczne (4), o przerwie energetycznej niższej niż przerwa energetyczna pozostałych warstw (2, 3, 5, 6) struktury epitaksjalnej, oraz górna warstwa niedomieszkowana (5). Strukturę warstwową tyrystora wytwarza się z azotków metali z grupy III w procesie wzrostu epitaksjalnego z wiązek molekularnych z użyciem plazmy azotowej PAMBE.
PL442428A 2022-09-30 2022-09-30 Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora PL442428A1 (pl)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PL442428A PL442428A1 (pl) 2022-09-30 2022-09-30 Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora
EP23199813.9A EP4345919A1 (en) 2022-09-30 2023-09-26 Light-triggered thyristor and method of fabrication of such thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL442428A PL442428A1 (pl) 2022-09-30 2022-09-30 Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora

Publications (1)

Publication Number Publication Date
PL442428A1 true PL442428A1 (pl) 2024-04-02

Family

ID=88511497

Family Applications (1)

Application Number Title Priority Date Filing Date
PL442428A PL442428A1 (pl) 2022-09-30 2022-09-30 Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora

Country Status (2)

Country Link
EP (1) EP4345919A1 (pl)
PL (1) PL442428A1 (pl)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
US20120091465A1 (en) * 2010-10-13 2012-04-19 Soraa, Inc. Method of Making Bulk InGaN Substrates and Devices Thereon
JP2017152542A (ja) * 2016-02-24 2017-08-31 ユニークチップス合同会社 光駆動半導体素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048359B (pl) 1952-07-22
US4806997A (en) 1985-06-14 1989-02-21 AT&T Laboratories American Telephone and Telegraph Company Double heterostructure optoelectronic switch
EP0273344B1 (en) 1986-12-22 1992-10-14 Nec Corporation A pnpn thyristor
US5539217A (en) 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
JP3692867B2 (ja) * 1999-11-05 2005-09-07 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
US20120091465A1 (en) * 2010-10-13 2012-04-19 Soraa, Inc. Method of Making Bulk InGaN Substrates and Devices Thereon
JP2017152542A (ja) * 2016-02-24 2017-08-31 ユニークチップス合同会社 光駆動半導体素子

Also Published As

Publication number Publication date
EP4345919A1 (en) 2024-04-03

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