DE3580468D1 - Gesteuerter einschaltbarer thyristor. - Google Patents
Gesteuerter einschaltbarer thyristor.Info
- Publication number
- DE3580468D1 DE3580468D1 DE8585903103T DE3580468T DE3580468D1 DE 3580468 D1 DE3580468 D1 DE 3580468D1 DE 8585903103 T DE8585903103 T DE 8585903103T DE 3580468 T DE3580468 T DE 3580468T DE 3580468 D1 DE3580468 D1 DE 3580468D1
- Authority
- DE
- Germany
- Prior art keywords
- controlled switchable
- switchable thyristor
- thyristor
- controlled
- switchable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62616584A | 1984-06-29 | 1984-06-29 | |
PCT/US1985/001002 WO1986000469A1 (en) | 1984-06-29 | 1985-05-31 | Controlled turn-on thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3580468D1 true DE3580468D1 (de) | 1990-12-13 |
Family
ID=24509228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585903103T Expired - Fee Related DE3580468D1 (de) | 1984-06-29 | 1985-05-31 | Gesteuerter einschaltbarer thyristor. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0190162B1 (de) |
DE (1) | DE3580468D1 (de) |
WO (1) | WO1986000469A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8815978D0 (en) * | 1988-07-05 | 1988-08-10 | British Telecomm | Method & apparatus for encoding decoding & transmitting data in compressed form |
US5204273A (en) * | 1990-08-20 | 1993-04-20 | Siemens Aktiengesellschaft | Method for the manufacturing of a thyristor with defined lateral resistor |
US5818074A (en) * | 1996-01-31 | 1998-10-06 | Beacon Light Products, Inc. | Smooth switching thyristor |
DE59713039D1 (de) * | 1996-05-20 | 2010-08-26 | Infineon Technologies Ag | Thyristor mit integriertem du/dt-schutz |
DE19640311B4 (de) * | 1996-09-30 | 2005-12-29 | Eupec Gmbh & Co. Kg | Halbleiterbauelement mit Lateralwiderstand und Verfahren zu dessen Herstellung |
DE10231199A1 (de) | 2002-07-10 | 2004-02-05 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Halbleiterbauelement |
EP2819174B1 (de) * | 2013-06-24 | 2016-10-26 | Silergy Corp. | Thyristor, Verfahren zum Auslösen eines Thyristors und Thyristorschaltungen |
CN114388651B (zh) * | 2021-12-15 | 2022-12-27 | 西安理工大学 | 具有高通流能力的SiC双HEJ-LTT及制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3248677A (en) * | 1961-10-27 | 1966-04-26 | Ibm | Temperature compensated semiconductor resistor |
US3246172A (en) * | 1963-03-26 | 1966-04-12 | Richard J Sanford | Four-layer semiconductor switch with means to provide recombination centers |
GB1112301A (en) * | 1964-07-27 | 1968-05-01 | Gen Electric | Controlled rectifier with improved turn-on and turn-off characteristics |
JPS501990B1 (de) * | 1970-06-02 | 1975-01-22 | ||
JPS5718347B2 (de) * | 1974-01-07 | 1982-04-16 | ||
US4012761A (en) * | 1976-04-19 | 1977-03-15 | General Electric Company | Self-protected semiconductor device |
DE2830735C2 (de) * | 1978-07-13 | 1982-11-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung |
US4314266A (en) * | 1978-07-20 | 1982-02-02 | Electric Power Research Institute, Inc. | Thyristor with voltage breakover current control separated from main emitter by current limit region |
DE2917786C2 (de) * | 1979-05-03 | 1983-07-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristortriode und Verfahren zu ihrer Herstellung |
JPS56122165A (en) * | 1980-02-29 | 1981-09-25 | Toshiba Corp | Semiconductor device |
US4261001A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity |
-
1985
- 1985-05-31 DE DE8585903103T patent/DE3580468D1/de not_active Expired - Fee Related
- 1985-05-31 WO PCT/US1985/001002 patent/WO1986000469A1/en active IP Right Grant
- 1985-05-31 EP EP85903103A patent/EP0190162B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0190162A1 (de) | 1986-08-13 |
EP0190162B1 (de) | 1990-11-07 |
EP0190162A4 (de) | 1987-12-09 |
WO1986000469A1 (en) | 1986-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8128 | New person/name/address of the agent |
Representative=s name: VOIGT, R., DIPL.-ING., PAT.-ANW., 6232 BAD SODEN |
|
8339 | Ceased/non-payment of the annual fee |