DE69308361D1 - Halbleiteranordnung und Verfahren zum Zusammensetzen derselben - Google Patents

Halbleiteranordnung und Verfahren zum Zusammensetzen derselben

Info

Publication number
DE69308361D1
DE69308361D1 DE69308361T DE69308361T DE69308361D1 DE 69308361 D1 DE69308361 D1 DE 69308361D1 DE 69308361 T DE69308361 T DE 69308361T DE 69308361 T DE69308361 T DE 69308361T DE 69308361 D1 DE69308361 D1 DE 69308361D1
Authority
DE
Germany
Prior art keywords
assembling
same
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69308361T
Other languages
English (en)
Other versions
DE69308361T2 (de
Inventor
Futoshi Tokunoh
Katsumi Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11017992A external-priority patent/JP2918389B2/ja
Priority claimed from JP23831592A external-priority patent/JP2741822B2/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69308361D1 publication Critical patent/DE69308361D1/de
Publication of DE69308361T2 publication Critical patent/DE69308361T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
DE1993608361 1992-04-28 1993-04-27 Halbleiteranordnung und Verfahren zum Zusammensetzen derselben Expired - Fee Related DE69308361T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11017992A JP2918389B2 (ja) 1992-04-28 1992-04-28 半導体装置およびその組立方法
JP23831592A JP2741822B2 (ja) 1992-09-07 1992-09-07 半導体装置およびその組立方法

Publications (2)

Publication Number Publication Date
DE69308361D1 true DE69308361D1 (de) 1997-04-10
DE69308361T2 DE69308361T2 (de) 1997-07-10

Family

ID=26449855

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1993608361 Expired - Fee Related DE69308361T2 (de) 1992-04-28 1993-04-27 Halbleiteranordnung und Verfahren zum Zusammensetzen derselben

Country Status (3)

Country Link
US (2) US5371386A (de)
EP (1) EP0567996B1 (de)
DE (1) DE69308361T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2845739B2 (ja) * 1993-11-29 1999-01-13 三菱電機株式会社 圧接型半導体装置及びその製造方法
US5436473A (en) * 1993-12-30 1995-07-25 International Rectifier Corporation Gate lead for center gate pressure assembled thyristor
JP3471880B2 (ja) * 1994-02-23 2003-12-02 三菱電機株式会社 圧接型半導体装置
JP3469304B2 (ja) * 1994-04-12 2003-11-25 三菱電機株式会社 半導体装置
JP3383081B2 (ja) * 1994-07-12 2003-03-04 三菱電機株式会社 陽極接合法を用いて製造した電子部品及び電子部品の製造方法
JP3259599B2 (ja) * 1995-06-20 2002-02-25 三菱電機株式会社 圧接型半導体装置
JP3018971B2 (ja) * 1995-12-18 2000-03-13 富士電機株式会社 半導体装置
US5729049A (en) * 1996-03-19 1998-03-17 Micron Technology, Inc. Tape under frame for conventional-type IC package assembly
US5883789A (en) * 1997-09-19 1999-03-16 United Technologies Corporation Method of mounting a PC board to a hybrid
JP4085536B2 (ja) * 1998-11-09 2008-05-14 株式会社日本自動車部品総合研究所 電気機器およびその製造方法並びに圧接型半導体装置
JP3677403B2 (ja) * 1998-12-07 2005-08-03 パイオニア株式会社 発熱素子の放熱構造
EP1065730B1 (de) * 1999-01-18 2006-11-29 Mitsubishi Denki Kabushiki Kaisha Unter druck kontaktiertes halbleiterbauelement
US6635513B2 (en) * 2001-05-29 2003-10-21 Hewlett-Packard Development Company, L.P. Pre-curved spring bolster plate
CA2443365C (en) * 2002-11-19 2010-01-12 F. Hoffmann-La Roche Ag Methods for the recombinant production of antifusogenic peptides
US7740466B2 (en) * 2006-06-29 2010-06-22 Toyoda Gosei Co., Ltd. Molding device for molding a weather strip
CN101123225B (zh) * 2007-09-10 2011-02-09 株洲南车时代电气股份有限公司 半导体器件台面防护方法及装置
DE102008058189A1 (de) * 2008-11-20 2010-07-22 Semikron Elektronik Gmbh & Co. Kg Feuchtigkeitsdichtes Leistungshalbleitermodul mit Zentriereinrichtung
US20110001227A1 (en) * 2009-07-01 2011-01-06 Texas Instruments Incorporated Semiconductor Chip Secured to Leadframe by Friction
DE102009034138B4 (de) * 2009-07-22 2011-06-01 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Sandwich mit einem Leistungshalbleiterbauelement
EP2447988B1 (de) * 2010-11-02 2015-05-06 GE Energy Power Conversion Technology Limited Leistungselektronikvorrichtung mit Randpassivierung
GB2529338B (en) 2013-05-13 2019-03-20 Abb Schweiz Ag Spacer system for a semiconductor switching device
JP6086816B2 (ja) * 2013-05-27 2017-03-01 リンナイ株式会社 電子装置
EP3097585B1 (de) * 2014-01-21 2018-02-07 ABB Schweiz AG Leistungshalbleiterbauelement
JP2016062983A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置
JP6359573B2 (ja) 2016-01-19 2018-07-18 株式会社東芝 半導体装置
JP6585569B2 (ja) * 2016-09-15 2019-10-02 株式会社東芝 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4710181Y1 (de) * 1968-02-05 1972-04-17
US3992717A (en) * 1974-06-21 1976-11-16 Westinghouse Electric Corporation Housing for a compression bonded encapsulation of a semiconductor device
DE2636629A1 (de) * 1976-08-13 1978-02-16 Siemens Ag Halbleiterbauelement mit scheibenfoermigem gehaeuse
US4099201A (en) * 1977-04-11 1978-07-04 General Electric Company Semiconductor rectifier assembly having an insulating material therein that evolves gases when exposed to an arc
US4388635A (en) * 1979-07-02 1983-06-14 Hitachi, Ltd. High breakdown voltage semiconductor device
JPS58215041A (ja) * 1982-06-09 1983-12-14 Hitachi Ltd 半導体装置
JPH065686B2 (ja) * 1985-09-04 1994-01-19 株式会社日立製作所 圧接型半導体装置
JPS62109327A (ja) * 1985-11-08 1987-05-20 Hitachi Ltd 全圧接型半導体装置
GB2195825B (en) * 1986-09-22 1990-01-10 Motorola Inc Integrated circuit package
JPS63293928A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd 電子装置
JPS6439736A (en) * 1987-08-05 1989-02-10 Mitsubishi Electric Corp Pressure contact type semiconductor device
JPH01106455A (ja) * 1987-10-19 1989-04-24 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JPH01293543A (ja) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp 半導体装置
US4926240A (en) * 1989-03-28 1990-05-15 Motorola, Inc. Semiconductor package having recessed die cavity walls
JPH0760893B2 (ja) * 1989-11-06 1995-06-28 三菱電機株式会社 半導体装置およびその製造方法
FR2660797A1 (fr) * 1990-04-06 1991-10-11 Motorola Semiconducteurs Boitier d'encapsulage perfectionne pour dispositif a semiconducteur.
US5005069A (en) * 1990-04-30 1991-04-02 Motorola Inc. Rectifier and method
JPH04114474A (ja) * 1990-09-04 1992-04-15 Fuji Electric Co Ltd 半導体素子

Also Published As

Publication number Publication date
US5371386A (en) 1994-12-06
DE69308361T2 (de) 1997-07-10
EP0567996B1 (de) 1997-03-05
US5543363A (en) 1996-08-06
EP0567996A1 (de) 1993-11-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee