DE69533511D1 - Lichtemittierende halbleitervorrichtung und herstellungsverfahren - Google Patents

Lichtemittierende halbleitervorrichtung und herstellungsverfahren

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Publication number
DE69533511D1
DE69533511D1 DE69533511T DE69533511T DE69533511D1 DE 69533511 D1 DE69533511 D1 DE 69533511D1 DE 69533511 T DE69533511 T DE 69533511T DE 69533511 T DE69533511 T DE 69533511T DE 69533511 D1 DE69533511 D1 DE 69533511D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
production method
emitting semiconductor
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69533511T
Other languages
English (en)
Other versions
DE69533511T2 (de
Inventor
Isao Kidoguchi
Hideto Adachi
Akihiko Ishibashi
Kiyoshi Ohnaka
Yuzaburo Ban
Minoru Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69533511D1 publication Critical patent/DE69533511D1/de
Application granted granted Critical
Publication of DE69533511T2 publication Critical patent/DE69533511T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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    • H01L33/26—Materials of the light emitting region
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    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
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    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
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    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
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    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
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    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
DE69533511T 1994-07-21 1995-07-20 Lichtemittierende halbleitervorrichtung und herstellungsverfahren Expired - Fee Related DE69533511T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16939494 1994-07-21
JP16939494 1994-07-21
PCT/JP1995/001447 WO1996003776A1 (fr) 1994-07-21 1995-07-20 Dispositif a semi-conducteur emettant de la lumiere et procede de production de celui-ci

Publications (2)

Publication Number Publication Date
DE69533511D1 true DE69533511D1 (de) 2004-10-21
DE69533511T2 DE69533511T2 (de) 2005-09-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE69533511T Expired - Fee Related DE69533511T2 (de) 1994-07-21 1995-07-20 Lichtemittierende halbleitervorrichtung und herstellungsverfahren

Country Status (6)

Country Link
US (3) US5751013A (de)
EP (2) EP0772247B1 (de)
JP (1) JP3121617B2 (de)
KR (2) KR100290076B1 (de)
DE (1) DE69533511T2 (de)
WO (1) WO1996003776A1 (de)

Families Citing this family (73)

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Publication number Priority date Publication date Assignee Title
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US6136626A (en) * 1994-06-09 2000-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
JP3121617B2 (ja) * 1994-07-21 2001-01-09 松下電器産業株式会社 半導体発光素子およびその製造方法
EP0732754B1 (de) * 1995-03-17 2007-10-31 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung
JP3728332B2 (ja) * 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
WO1997008759A1 (fr) * 1995-08-31 1997-03-06 Kabushiki Kaisha Toshiba Dispositif emetteur de lumiere bleue et son procede de fabrication
KR100267839B1 (ko) * 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
US6320207B1 (en) * 1996-04-22 2001-11-20 Kabushiki Kaisha Toshiba Light emitting device having flat growth GaN layer
US6230071B1 (en) * 1996-05-24 2001-05-08 The Regents Of The University Of California Depth enhancement of ion sensitized data
JP3304787B2 (ja) 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
JP2930032B2 (ja) * 1996-09-26 1999-08-03 日本電気株式会社 Ｉｉ−ｖｉ族化合物半導体発光素子およびその製造方法
EP1959506A2 (de) 1997-01-31 2008-08-20 Matsushita Electric Industrial Co., Ltd. Herstellungsverfahren für eine lichtemittierende Halbleitervorrichtung
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US5751013A (en) 1998-05-12
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