DE69525128D1 - Lichtemittierende Halbleiteranordnung und Herstellungsverfahren - Google Patents

Lichtemittierende Halbleiteranordnung und Herstellungsverfahren

Info

Publication number
DE69525128D1
DE69525128D1 DE69525128T DE69525128T DE69525128D1 DE 69525128 D1 DE69525128 D1 DE 69525128D1 DE 69525128 T DE69525128 T DE 69525128T DE 69525128 T DE69525128 T DE 69525128T DE 69525128 D1 DE69525128 D1 DE 69525128D1
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525128T
Other languages
English (en)
Other versions
DE69525128T2 (de
Inventor
Kenji Shimoyama
Kazumasa Kiyomi
Hideki Gotoh
Satoru Nagoa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26283794A external-priority patent/JP3446343B2/ja
Priority claimed from JP26283994A external-priority patent/JP3446344B2/ja
Priority claimed from JP26283894A external-priority patent/JPH08125277A/ja
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of DE69525128D1 publication Critical patent/DE69525128D1/de
Application granted granted Critical
Publication of DE69525128T2 publication Critical patent/DE69525128T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69525128T 1994-10-26 1995-10-26 Lichtemittierende Halbleiteranordnung und Herstellungsverfahren Expired - Fee Related DE69525128T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP26283794A JP3446343B2 (ja) 1994-10-26 1994-10-26 Ｖ溝構造を有する半導体発光装置
JP26283994A JP3446344B2 (ja) 1994-10-26 1994-10-26 Ｖ溝構造を有する半導体発光装置
JP26283894A JPH08125277A (ja) 1994-10-26 1994-10-26 Ｖ溝構造を有する半導体装置

Publications (2)

Publication Number Publication Date
DE69525128D1 true DE69525128D1 (de) 2002-03-14
DE69525128T2 DE69525128T2 (de) 2002-09-05

Family

ID=27335175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525128T Expired - Fee Related DE69525128T2 (de) 1994-10-26 1995-10-26 Lichtemittierende Halbleiteranordnung und Herstellungsverfahren

Country Status (3)

Country Link
US (3) US6265733B1 (de)
EP (1) EP0709902B1 (de)
DE (1) DE69525128T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342731B1 (en) * 1997-12-31 2002-01-29 Micron Technology, Inc. Vertically mountable semiconductor device, assembly, and methods
US6639926B1 (en) * 1998-03-25 2003-10-28 Mitsubishi Chemical Corporation Semiconductor light-emitting device
KR100277940B1 (ko) * 1998-07-14 2001-02-01 구자홍 지에이엔(gan) 반도체 레이저 다이오드 및 그 제조방법
JP2001119012A (ja) * 1999-10-15 2001-04-27 Fujitsu Ltd 半導体装置及びその製造方法
JP2002118327A (ja) * 2000-10-06 2002-04-19 Furukawa Electric Co Ltd:The 化合物半導体装置の製造方法
US6888867B2 (en) * 2001-08-08 2005-05-03 Nobuhiko Sawaki Semiconductor laser device and fabrication method thereof
JP4307113B2 (ja) * 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
JP4476912B2 (ja) * 2005-09-29 2010-06-09 株式会社東芝 半導体発光素子およびその製造方法
KR20100093872A (ko) * 2009-02-17 2010-08-26 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
JP5519355B2 (ja) * 2010-03-19 2014-06-11 スタンレー電気株式会社 半導体発光素子及びその製造方法
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
WO2011145283A1 (ja) * 2010-05-20 2011-11-24 パナソニック株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
EP3218747B1 (de) * 2014-11-11 2020-10-14 Luna Innovations Incorporated Glasfaser und verfahren und vorrichtung zur genauen glasfasermessung unter mehrfachreizen
CN105742423B (zh) * 2015-11-30 2018-08-31 厦门市三安光电科技有限公司 发光二极管及其制作方法
CN105932128B (zh) * 2016-05-10 2018-04-06 厦门市三安光电科技有限公司 一种氮化物发光二极管的外延结构
US10260005B2 (en) 2016-08-05 2019-04-16 Greyrock Technology LLC Catalysts, related methods and reaction products
CN107833955B (zh) * 2017-10-09 2019-11-26 厦门三安光电有限公司 一种氮化物发光二极管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504952A (en) * 1982-06-01 1985-03-12 At&T Bell Laboratories Stripe-guide TJS laser
JPH01106489A (ja) * 1987-10-20 1989-04-24 Fujitsu Ltd 半導体装置及びその製造方法
US5362973A (en) * 1990-06-25 1994-11-08 Xerox Corporation Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth
US5138625A (en) * 1991-01-08 1992-08-11 Xerox Corporation Quantum wire semiconductor laser
IT1245541B (it) * 1991-05-13 1994-09-29 Cselt Centro Studi Lab Telecom Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione
JPH04349622A (ja) * 1991-05-28 1992-12-04 Eastman Kodak Japan Kk 量子デバイス製造方法
JP3149030B2 (ja) * 1991-06-13 2001-03-26 富士通株式会社 半導体量子箱装置及びその製造方法
JPH05145178A (ja) * 1991-11-18 1993-06-11 Furukawa Electric Co Ltd:The 歪量子井戸半導体レーザ素子
JPH06232099A (ja) * 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
JPH07326730A (ja) * 1994-05-31 1995-12-12 Mitsubishi Electric Corp 半導体装置，その製造方法，単一電子デバイス，及びその製造方法
JP3374878B2 (ja) * 1994-09-02 2003-02-10 三菱電機株式会社 半導体エッチング方法

Also Published As

Publication number Publication date
US6744066B2 (en) 2004-06-01
EP0709902B1 (de) 2002-01-23
US20020014622A1 (en) 2002-02-07
US6265733B1 (en) 2001-07-24
DE69525128T2 (de) 2002-09-05
US20010040236A1 (en) 2001-11-15
US6589807B2 (en) 2003-07-08
EP0709902A1 (de) 1996-05-01

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee