CN105932128B - 一种氮化物发光二极管的外延结构 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 claims description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种氮化物发光二极管的外延结构，通过在多量子阱发光区的V‑pits上方填充钝化层/DBR/Al量子点的复合结构，钝化层阻挡电子和空穴扩散至V‑pits，降低V‑pits中缺陷的非辐射复合，而DBR将量子阱发出的光反射，防止光被V‑pits中的缺陷吸收，同时，Al量子点形成光反射和表面等离激元，进一步引导光波导方向。通过钝化层/DBR/Al量子点复合结构的多重垒加效应，提升量子阱的发光效率。
Description
技术领域
本发明涉及半导体光电器件领域，特别是一种氮化物发光二极管的外延结构。
背景技术
现今，发光二极管（LED），特别是氮化物发光二极管因其较高的发光效率，在普通照明领域已取得广泛的应用。因氮化物发光二极管的底层存在缺陷，在生长量子阱时缺陷延伸会形成V-pits，形成非辐射复合中心，导致电子容易通过V-pits的漏电通道泄漏并吸收量子阱发出的光，形成漏电和非辐射复合，降低发光效率、发光强度和ESD。
发明内容
本发明的目的是：提供一种氮化物发光二极管的外延结构，通过在多量子阱发光区域的V-pits上方填充钝化层/DBR/Al量子点的复合结构，使非掺杂的钝化层阻挡电子和空穴扩展至V-pits，降低非辐射复合，而DBR（分布布拉格反射层）则将量子阱发光的光反射，防止光被V-pits中的缺陷吸收，同时，Al量子点形成的光反射和表面等离激元，进一步引导光波导方向，通过多重垒加的效应提升氮化物发光二极管的发光效率。
一种氮化物发光二极管的外延结构，依次包括衬底，N型氮化物，多量子阱，V-pits，钝化层/DBR/Al量子点，P型氮化物，P型接触层以及DBR，其特征在于：多量子阱发光区的V-pits上方填充钝化层/DBR/Al量子点的复合结构，钝化层阻挡电子和空穴扩散至V-pits，降低V-pits中缺陷的非辐射复合，而DBR将量子阱发出的光反射，防止光被V-pits中的缺陷吸收，同时，Al量子点形成光反射和表面等离激元，进一步引导光波导方向。通过钝化层/DBR/Al量子点复合结构的多重垒加效应，结合P型半导体层一侧的DBR，使量子阱发出的光反射至衬底一侧，提升氮化物发光二极管的发光效率。
进一步地，所述复合结构中的钝化层包含氮化硅SiNx，氮化铝AlN，氮化硼BN，二氧化硅SiO2等材料，用于阻挡电子和空穴扩散至V-pits，降低V-pits中缺陷的非辐射复合。
进一步地，所述钝化层/DBR/Al量子点的钝化层厚度为1~100nm，DBR厚度为1~100nm，Al量子点大小为1~100nm。
进一步地，所述钝化层为非掺杂材料，背景载流子浓度为1E15~1E17cm-3，通过高电阻和高势垒的钝化层材料阻止电子和空穴扩展至V-pits，改善漏电和降低非辐射复合。
进一步地，所述V-pits的大小为50~500nm，密度为1E7~1E10cm-2。
进一步地，所述衬底为蓝宝石、碳化硅、硅、氮化镓、氮化铝、氧化锌适合外延生长的衬底。
附图说明
图1为本发明实施例的氮化物发光二极管外延结构示意图。
图2为本发明实施例的氮化物发光二极管的光波导示意图。
图示说明：100：衬底，101：缓冲层，102：N型氮化物，103：多量子阱，104：V-pits，105：钝化层，106：DBR，107：Al量子点，108：P型氮化物，109：P型接触层，110：DBR。
具体实施方式
传统的氮化物发光二极管，因晶格失配和热失配在氮化物生长过程中会形成缺陷，生长多量子阱时该位错会延伸形成V-pits，而该V-pits形成非辐射复合中心，导致电子容易通过V-pits的漏电通道泄漏和吸收光，形成漏电和非辐射复合，降低发光强度和ESD。
为了解决V-pits内缺陷的吸光及形成非辐射复合中心的问题，本发明提出的一种氮化物发光二极管的外延结构，如图1所示，依次包括：衬底100，缓冲层101，N型氮化物102，多量子阱103，V-pits 104，钝化层(105)/DBR(106)/Al量子点(107)的复合结构，P型氮化物108，P型接触层109和DBR 110。
首先，使用金属有机化学气相沉积反应腔，在衬底上依次外延生长缓冲层、N型氮化物、多量子阱，并在量子阱发光区形成V-pits，密度为1E8cm-2，直径为200nm。然后，在V-pits上方填充无掺杂的钝化层BN层，厚度为10nm，沉积厚度为10nm的DBR和大小为20nm的Al量子点，形成钝化层BN/DBR/Al量子点的复合结构。钝化层BN背景载流子浓度为5E16cm-3，通过高电阻和高势垒的钝化层材料，阻挡电子和空穴扩散至V-pits，降低V-pits中缺陷的非辐射复合，改善漏电和降低非辐射复合。而DBR将量子阱发出的光反射，防止光被V-pits中的缺陷吸收，同时，Al量子点形成光反射和表面等离激元，进一步引导光波导方向。通过钝化层BN/DBR/Al量子点复合结构的多重垒加效应，结合P型一侧的DBR，使量子阱发出的光反射至衬底一侧，提升氮化物发光二极管的发光效率，如图2所示。
以上实施方式仅用于说明本发明，而并非用于限定本发明，本领域的技术人员，在不脱离本发明的精神和范围的情况下，可以对本发明做出各种修饰和变动，因此所有等同的技术方案也属于本发明的范畴，本发明的专利保护范围应视权利要求书范围限定。
Claims (9)
1.一种氮化物发光二极管的外延结构，依次包括衬底，N型氮化物，多量子阱，V-pits，钝化层/DBR/Al量子点的复合结构，P型氮化物，P型接触层以及DBR，其特征在于：多量子阱发光区的V-pits上方填充钝化层/DBR/Al量子点的复合结构，钝化层阻挡电子和空穴扩散至V-pits，降低V-pits中缺陷的非辐射复合，而DBR将量子阱发出的光反射，防止光被V-pits中的缺陷吸收，同时，Al量子点形成光反射和表面等离激元，进一步引导光波导方向。
2.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述复合结构中的钝化层用于阻挡电子和空穴扩散至V-pits，降低V-pits中缺陷的非辐射复合。
3.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述复合结构中的DBR将量子阱发出的光反射，防止光被V-pits中的位错及缺陷吸收。
4.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述复合结构中的Al量子点形成光反射和表面等离激元，用于引导光波导方向。
5.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述钝化层为氮化硅或氮化铝或氮化硼或二氧化硅或前述组合。
6.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述复合结构中的钝化层厚度为1~100nm，DBR厚度为1~100nm，Al量子点大小为1~100nm。
7.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述钝化层为非掺杂材料，背景载流子浓度为1E15~1E17cm-3。
8.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述V-pits大小为50~500nm，密度为1E7~1E10cm-2。
9.根据权利要求1所述的一种氮化物发光二极管的外延结构，其特征在于：所述衬底为蓝宝石或碳化硅或硅或氮化镓或氮化铝或氧化锌或前述组合。
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