DE69936488D1 - Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren - Google Patents

Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

Info

Publication number
DE69936488D1
DE69936488D1 DE69936488T DE69936488T DE69936488D1 DE 69936488 D1 DE69936488 D1 DE 69936488D1 DE 69936488 T DE69936488 T DE 69936488T DE 69936488 T DE69936488 T DE 69936488T DE 69936488 D1 DE69936488 D1 DE 69936488D1
Authority
DE
Germany
Prior art keywords
manufacturing
emitting device
semiconductor light
semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69936488T
Other languages
English (en)
Other versions
DE69936488T2 (de
Inventor
Hironobu Narui
Takehiro Taniguchi
Noriko Ueno
Nobukata Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69936488D1 publication Critical patent/DE69936488D1/de
Publication of DE69936488T2 publication Critical patent/DE69936488T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
DE69936488T 1998-06-04 1999-05-31 Halbleiteremissionselement und Herstellungsverfahren Expired - Lifetime DE69936488T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17391998A JP4462657B2 (ja) 1998-06-04 1998-06-04 半導体発光素子およびその製造方法
JP17391998 1998-06-04

Publications (2)

Publication Number Publication Date
DE69936488D1 true DE69936488D1 (de) 2007-08-23
DE69936488T2 DE69936488T2 (de) 2008-03-20

Family

ID=15969518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69936488T Expired - Lifetime DE69936488T2 (de) 1998-06-04 1999-05-31 Halbleiteremissionselement und Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6459714B1 (de)
EP (1) EP0963017B1 (de)
JP (1) JP4462657B2 (de)
DE (1) DE69936488T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141611A (ja) * 2000-08-24 2002-05-17 Fuji Photo Film Co Ltd 半導体発光素子およびその製造方法
JP2002141604A (ja) * 2000-11-07 2002-05-17 Sony Corp 半導体レーザ
JP4150511B2 (ja) * 2001-05-16 2008-09-17 株式会社日立製作所 半導体レ−ザ装置
JP2005327826A (ja) * 2004-05-13 2005-11-24 Sony Corp 集積型半導体レーザ装置、集積型半導体レーザ装置の製造方法、集積型半導体発光装置、集積型半導体発光装置の製造方法、光学ピックアップ装置および光ディスク装置
US7693204B2 (en) 2006-02-03 2010-04-06 Ricoh Company, Ltd. Surface-emitting laser device and surface-emitting laser array including same
KR20100017969A (ko) 2006-04-28 2010-02-16 가부시키가이샤 리코 면 발광 레이저 어레이, 광학 주사 장치 및 화상 형성 장치
US7924487B2 (en) 2007-02-09 2011-04-12 Ricoh Company, Ltd. Optical scanning device and image forming apparatus
KR100861238B1 (ko) * 2007-02-16 2008-10-02 (주)큐에스아이 다중 빔 레이저 다이오드 및 그 제조 방법
US7626744B2 (en) 2007-02-27 2009-12-01 Ricoh Company, Limited Optical scanning device and image forming apparatus
JP5177399B2 (ja) 2007-07-13 2013-04-03 株式会社リコー 面発光レーザアレイ、光走査装置及び画像形成装置
JP2009238989A (ja) * 2008-03-27 2009-10-15 Sony Corp マルチビーム半導体レーザ
EP2131458B1 (de) 2008-06-03 2017-08-16 Ricoh Company, Ltd. Vertikalresonator-Oberflächenemissionslaser (VCSEL), VCSEL-Arrayvorrichtung, optisches Abtastgerät und Bilderzeugungsvorrichtung
JP5447799B2 (ja) 2009-06-18 2014-03-19 セイコーエプソン株式会社 発光装置およびその駆動方法、並びに、プロジェクター
JP5521411B2 (ja) * 2009-07-03 2014-06-11 ソニー株式会社 半導体レーザ装置
JP5718008B2 (ja) * 2010-09-24 2015-05-13 古河電気工業株式会社 半導体導波路アレイ素子の製造方法
JP5981092B2 (ja) * 2011-03-23 2016-08-31 ローム株式会社 マルチビーム半導体レーザ装置
JP5890104B2 (ja) * 2011-03-23 2016-03-22 ローム株式会社 マルチビーム半導体レーザ装置
JP5054221B1 (ja) 2011-08-26 2012-10-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
DE202012011040U1 (de) 2012-11-19 2012-12-12 Isophon Glas Gmbh Verglasungseinheit
JP6244667B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
JP6244668B2 (ja) * 2013-05-31 2017-12-13 住友電気工業株式会社 量子カスケードレーザ
JP6257361B2 (ja) * 2014-02-04 2018-01-10 三菱電機株式会社 半導体レーザアレイ
CN113517628B (zh) * 2021-04-22 2023-12-08 中国科学院半导体研究所 锥形半导体激光器分离电极热沉

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069463A (en) * 1976-09-02 1978-01-17 International Business Machines Corporation Injection laser array
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPH01184892A (ja) * 1988-01-13 1989-07-24 Canon Inc 半導体レーザ装置
FR2685561B1 (fr) * 1991-12-20 1994-02-04 Thomson Hybrides Procede de cablage d'une barrette de lasers et barrette cablee par ce procede.
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
BE1007282A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Opto-electronische halfgeleiderinrichting met een array van halfgeleiderdiodelasers en werkwijze ter vervaardiging daarvan.
JPH1084161A (ja) * 1996-09-06 1998-03-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
JPH1117279A (ja) * 1997-06-20 1999-01-22 Toshiba Corp 波長多重光通信用素子、送信器、受信器および波長多重光通信システム
US6052399A (en) * 1997-08-29 2000-04-18 Xerox Corporation Independently addressable laser array with native oxide for optical confinement and electrical isolation

Also Published As

Publication number Publication date
DE69936488T2 (de) 2008-03-20
JPH11354888A (ja) 1999-12-24
JP4462657B2 (ja) 2010-05-12
EP0963017A3 (de) 2004-02-04
US6459714B1 (en) 2002-10-01
EP0963017A2 (de) 1999-12-08
US6567445B1 (en) 2003-05-20
EP0963017B1 (de) 2007-07-11

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