DE69420944T2 - Halbleitervorrichtung und herstellungsverfahren - Google Patents
Halbleitervorrichtung und herstellungsverfahrenInfo
- Publication number
- DE69420944T2 DE69420944T2 DE69420944T DE69420944T DE69420944T2 DE 69420944 T2 DE69420944 T2 DE 69420944T2 DE 69420944 T DE69420944 T DE 69420944T DE 69420944 T DE69420944 T DE 69420944T DE 69420944 T2 DE69420944 T2 DE 69420944T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- production method
- production
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5186450A JP2801127B2 (ja) | 1993-07-28 | 1993-07-28 | 半導体装置およびその製造方法 |
PCT/JP1994/001241 WO1995004375A1 (fr) | 1993-07-28 | 1994-07-28 | Dispositf a semi-conducteurs et sa fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69420944D1 DE69420944D1 (de) | 1999-11-04 |
DE69420944T2 true DE69420944T2 (de) | 2000-02-03 |
Family
ID=16188673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69420944T Expired - Fee Related DE69420944T2 (de) | 1993-07-28 | 1994-07-28 | Halbleitervorrichtung und herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (2) | US5591991A (de) |
EP (1) | EP0663698B1 (de) |
JP (1) | JP2801127B2 (de) |
AU (1) | AU7238194A (de) |
DE (1) | DE69420944T2 (de) |
WO (1) | WO1995004375A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2801127B2 (ja) * | 1993-07-28 | 1998-09-21 | 日本碍子株式会社 | 半導体装置およびその製造方法 |
US5648665A (en) * | 1994-04-28 | 1997-07-15 | Ngk Insulators, Ltd. | Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor |
JPH0855978A (ja) * | 1994-06-09 | 1996-02-27 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
JP3245308B2 (ja) * | 1994-08-26 | 2002-01-15 | 日本碍子株式会社 | 半導体装置の製造方法 |
JP3214987B2 (ja) * | 1994-09-05 | 2001-10-02 | 日本碍子株式会社 | 半導体装置およびその製造方法 |
JP3277075B2 (ja) * | 1994-09-07 | 2002-04-22 | 日本碍子株式会社 | 半導体装置およびその製造方法 |
US5841155A (en) * | 1995-02-08 | 1998-11-24 | Ngk Insulators, Ltd. | Semiconductor device containing two joined substrates |
DE59812848D1 (de) * | 1997-10-11 | 2005-07-14 | Conti Temic Microelectronic | Gehäuse zur Aufnahme elektronischer Bauelemente |
KR100292979B1 (ko) * | 1997-10-14 | 2001-07-12 | 김충환 | 홈구조실리콘웨이퍼직접접합기술을이용한대면적사이리스터제조방법 |
DE19804192A1 (de) * | 1998-02-03 | 1999-08-12 | Siemens Ag | Verfahren zur Herstellung eines Leistungshalbleiterbauelementes |
DE19816448C1 (de) | 1998-04-14 | 1999-09-30 | Siemens Ag | Universal-Halbleiterscheibe für Hochspannungs-Halbleiterbauelemente, ihr Herstellungsverfahren und ihre Verwendung |
DE10142913B4 (de) * | 2001-08-27 | 2004-03-18 | Hahn-Meitner-Institut Berlin Gmbh | Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung |
US7501630B2 (en) * | 2003-02-21 | 2009-03-10 | Koninklijke Philips Electronics N.V. | Gas measurement system |
US7432508B2 (en) * | 2003-02-21 | 2008-10-07 | Ric Investments, Llc | Gas measurement system |
JP5682327B2 (ja) * | 2011-01-25 | 2015-03-11 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、及び電子機器 |
JP6120550B2 (ja) * | 2011-12-22 | 2017-04-26 | 日本碍子株式会社 | 半導体装置 |
JP2013149956A (ja) * | 2011-12-22 | 2013-08-01 | Ngk Insulators Ltd | 半導体装置 |
JP2013168564A (ja) * | 2012-02-16 | 2013-08-29 | Ngk Insulators Ltd | 半導体装置及びその製造方法 |
JP5456936B1 (ja) | 2013-11-26 | 2014-04-02 | 株式会社日本コンラックス | 紙葉類処理装置 |
US10083952B2 (en) * | 2017-02-02 | 2018-09-25 | Globalfoundries Inc. | Diode-triggered schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control |
WO2022198017A1 (en) * | 2021-03-18 | 2022-09-22 | Cactus Materials, Inc. | Method for manufacturing deep-junction low-gain avalanche detectors and associated semiconductor substrates |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2926734C2 (de) * | 1979-07-03 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor mit einem durch plastische Verformung erzeugten pn-Übergang und Verfahren zu einer Herstellung |
JPS5788771A (en) * | 1980-11-21 | 1982-06-02 | Semiconductor Res Found | Electrostatic induction thyristor |
GB2111743B (en) * | 1981-08-25 | 1985-11-27 | Handotai Kenkyu Shinkokai | Semiconductor laser |
JPS5835973A (ja) * | 1981-08-28 | 1983-03-02 | Meidensha Electric Mfg Co Ltd | 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ |
US4611235A (en) * | 1984-06-04 | 1986-09-09 | General Motors Corporation | Thyristor with turn-off FET |
DE3586735D1 (de) * | 1984-10-19 | 1992-11-12 | Bbc Brown Boveri & Cie | Abschaltbares leistungshalbleiterbauelement. |
JPH0682833B2 (ja) * | 1985-02-08 | 1994-10-19 | 株式会社東芝 | サイリスタの製造方法 |
JPS61182259A (ja) * | 1985-02-08 | 1986-08-14 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ |
JPH0770476B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0770474B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 化合物半導体装置の製造方法 |
JPS63224361A (ja) * | 1987-03-13 | 1988-09-19 | Meidensha Electric Mfg Co Ltd | 埋込ゲ−ト形gtoサイリスタ |
JPH07109882B2 (ja) * | 1988-02-26 | 1995-11-22 | 三菱電機株式会社 | バイポーラ型半導体スイッチング装置 |
GB2237929A (en) * | 1989-10-23 | 1991-05-15 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
JPH03222364A (ja) * | 1990-01-26 | 1991-10-01 | Matsushita Electric Works Ltd | 静電誘導半導体装置 |
JP2799252B2 (ja) * | 1991-04-23 | 1998-09-17 | 三菱電機株式会社 | Mos型半導体装置およびその製造方法 |
SE470226B (sv) * | 1991-07-01 | 1993-12-06 | Asea Brown Boveri | GTO-tyristor jämte förfarande för framställning av en GTO- tyristor |
US5352909A (en) * | 1991-12-19 | 1994-10-04 | Nec Corporation | Field effect transistor and method for manufacturing the same |
JP2811526B2 (ja) * | 1993-04-19 | 1998-10-15 | 東洋電機製造株式会社 | 静電誘導ショットキー短絡構造を有する静電誘導型半導体素子 |
JP2801127B2 (ja) * | 1993-07-28 | 1998-09-21 | 日本碍子株式会社 | 半導体装置およびその製造方法 |
US5648665A (en) * | 1994-04-28 | 1997-07-15 | Ngk Insulators, Ltd. | Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor |
JP3647552B2 (ja) * | 1996-05-09 | 2005-05-11 | ホリゾン・インターナショナル株式会社 | 丁合機用用紙配給装置 |
-
1993
- 1993-07-28 JP JP5186450A patent/JP2801127B2/ja not_active Expired - Fee Related
-
1994
- 1994-07-28 DE DE69420944T patent/DE69420944T2/de not_active Expired - Fee Related
- 1994-07-28 US US08/407,023 patent/US5591991A/en not_active Expired - Fee Related
- 1994-07-28 EP EP94921826A patent/EP0663698B1/de not_active Expired - Lifetime
- 1994-07-28 AU AU72381/94A patent/AU7238194A/en not_active Abandoned
- 1994-07-28 WO PCT/JP1994/001241 patent/WO1995004375A1/ja active IP Right Grant
-
1996
- 1996-10-09 US US08/728,147 patent/US5739044A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1995004375A1 (fr) | 1995-02-09 |
EP0663698A1 (de) | 1995-07-19 |
JPH0745815A (ja) | 1995-02-14 |
US5591991A (en) | 1997-01-07 |
JP2801127B2 (ja) | 1998-09-21 |
EP0663698B1 (de) | 1999-09-29 |
US5739044A (en) | 1998-04-14 |
EP0663698A4 (de) | 1996-01-31 |
DE69420944D1 (de) | 1999-11-04 |
AU7238194A (en) | 1995-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |