KR970004182A - 반도체 레이저 다이오드 및 그 제조 방법 - Google Patents

반도체 레이저 다이오드 및 그 제조 방법 Download PDF

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Publication number
KR970004182A
KR970004182A KR1019950016042A KR19950016042A KR970004182A KR 970004182 A KR970004182 A KR 970004182A KR 1019950016042 A KR1019950016042 A KR 1019950016042A KR 19950016042 A KR19950016042 A KR 19950016042A KR 970004182 A KR970004182 A KR 970004182A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor laser
laser diode
diode
semiconductor
Prior art date
Application number
KR1019950016042A
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English (en)
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KR100366040B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to KR1019950016042A priority Critical patent/KR100366040B1/ko
Publication of KR970004182A publication Critical patent/KR970004182A/ko
Application granted granted Critical
Publication of KR100366040B1 publication Critical patent/KR100366040B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1019950016042A 1995-06-16 1995-06-16 반도체레이저다이오드및그제조방법 KR100366040B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950016042A KR100366040B1 (ko) 1995-06-16 1995-06-16 반도체레이저다이오드및그제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016042A KR100366040B1 (ko) 1995-06-16 1995-06-16 반도체레이저다이오드및그제조방법

Publications (2)

Publication Number Publication Date
KR970004182A true KR970004182A (ko) 1997-01-29
KR100366040B1 KR100366040B1 (ko) 2003-03-03

Family

ID=37491089

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016042A KR100366040B1 (ko) 1995-06-16 1995-06-16 반도체레이저다이오드및그제조방법

Country Status (1)

Country Link
KR (1) KR100366040B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100991784B1 (ko) 2004-02-04 2010-11-03 엘지전자 주식회사 질화물 반도체 레이저 다이오드의 웨이퍼 벤딩 줄이는 방법

Also Published As

Publication number Publication date
KR100366040B1 (ko) 2003-03-03

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