DE69523100D1 - Oberflaechenemittierender laser und herstellungsverfahren - Google Patents
Oberflaechenemittierender laser und herstellungsverfahrenInfo
- Publication number
- DE69523100D1 DE69523100D1 DE69523100T DE69523100T DE69523100D1 DE 69523100 D1 DE69523100 D1 DE 69523100D1 DE 69523100 T DE69523100 T DE 69523100T DE 69523100 T DE69523100 T DE 69523100T DE 69523100 D1 DE69523100 D1 DE 69523100D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- emitting laser
- emitting
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1221—Detuning between Bragg wavelength and gain maximum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP485994 | 1994-01-20 | ||
PCT/JP1995/000060 WO1995020254A1 (en) | 1994-01-20 | 1995-01-20 | Surface emission type semiconductor laser, method and apparatus for producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69523100D1 true DE69523100D1 (de) | 2001-11-15 |
DE69523100T2 DE69523100T2 (de) | 2002-06-06 |
Family
ID=11595411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69523100T Expired - Lifetime DE69523100T2 (de) | 1994-01-20 | 1995-01-20 | Oberflaechenemittierender laser und herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US5621750A (de) |
EP (1) | EP0691045B1 (de) |
JP (1) | JP3766976B2 (de) |
KR (1) | KR100363503B1 (de) |
DE (1) | DE69523100T2 (de) |
WO (1) | WO1995020254A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3818388B1 (ja) * | 1994-01-20 | 2006-09-06 | セイコーエプソン株式会社 | 面発光型半導体レーザ装置およびその製造方法 |
US6531193B2 (en) | 1997-07-07 | 2003-03-11 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6668005B2 (en) | 1998-01-31 | 2003-12-23 | Klaus Streubel | Pre-fusion oxidized and wafer-bonded vertical cavity laser |
GB2333895B (en) * | 1998-01-31 | 2003-02-26 | Mitel Semiconductor Ab | Pre-fusion oxidized and wafer-bonded vertical cavity laser |
US6528829B1 (en) * | 1999-03-25 | 2003-03-04 | Trw Inc. | Integrated circuit structure having a charge injection barrier |
AT409905B (de) * | 1999-12-09 | 2002-12-27 | Femtolasers Produktions Gmbh | Mehrschichtiger spiegel zur herbeiführung einer vorgegebenen gruppenverzögerungsdispersion |
US6646292B2 (en) * | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
JP3791584B2 (ja) * | 1999-12-28 | 2006-06-28 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
JP2002083999A (ja) * | 2000-06-21 | 2002-03-22 | Sharp Corp | 半導体発光素子 |
JP2002164622A (ja) * | 2000-11-22 | 2002-06-07 | Toshiba Electronic Engineering Corp | 半導体光素子 |
DE10131608B4 (de) * | 2001-06-29 | 2004-02-05 | Forschungszentrum Jülich GmbH | Photosensor für ein Durchlichtverfahren zur Detektion der Bewegungsrichtung von Intensitätsmaxima und Intensitätsminima einer optischen stehenden Welle |
US7767928B2 (en) * | 2001-09-05 | 2010-08-03 | Lasertec Gmbh | Depth measurement and depth control or automatic depth control for a hollow to be produced by a laser processing device |
JP4056347B2 (ja) * | 2002-09-30 | 2008-03-05 | ローム株式会社 | 半導体発光装置およびその製造方法 |
US6853669B2 (en) * | 2002-12-10 | 2005-02-08 | Ut-Battelle, Llc | Nanocrystal waveguide (NOW) laser |
JP4439199B2 (ja) * | 2003-03-20 | 2010-03-24 | 株式会社リコー | 垂直共振器型面発光半導体レーザ装置、およびそれを用いた光論理演算装置、波長変換装置、光パルス波形整形装置、ならびに光伝送システム |
US20060056473A1 (en) * | 2004-08-20 | 2006-03-16 | Tatsuya Tanigawa | Semiconductor light emitting element and method for fabricating the same |
JP4495052B2 (ja) * | 2005-08-26 | 2010-06-30 | 古河電気工業株式会社 | 面発光レーザ素子、光送信モジュール、光コネクタおよび光通信システム |
GB2432715A (en) * | 2005-11-25 | 2007-05-30 | Sharp Kk | Nitride semiconductor light emitting devices |
JP2008034795A (ja) * | 2006-07-07 | 2008-02-14 | Seiko Epson Corp | 面発光型半導体レーザ |
WO2008114707A1 (ja) * | 2007-03-22 | 2008-09-25 | Nec Corporation | 面発光型半導体レーザ |
JP5274038B2 (ja) * | 2008-02-06 | 2013-08-28 | キヤノン株式会社 | 垂直共振器型面発光レーザの製造方法とレーザアレイの製造方法 |
JP5221180B2 (ja) * | 2008-03-28 | 2013-06-26 | Dowaエレクトロニクス株式会社 | 発光素子 |
JP5871458B2 (ja) * | 2010-11-02 | 2016-03-01 | キヤノン株式会社 | 垂直共振器型面発光レーザ、画像形成装置 |
US9335262B2 (en) * | 2011-08-25 | 2016-05-10 | Palo Alto Research Center Incorporated | Gap distributed Bragg reflectors |
FR3079681B1 (fr) * | 2018-03-29 | 2021-09-17 | Commissariat Energie Atomique | Diode laser de type vcsel a confinement de porteurs et son procede de fabrication. |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62189784A (ja) * | 1986-02-17 | 1987-08-19 | Nec Corp | 埋込み型半導体レ−ザ及びその製造方法 |
FR2606223B1 (fr) * | 1986-10-29 | 1996-03-01 | Seiko Epson Corp | Laser a semiconducteur et son procede de fabrication |
JPH01196894A (ja) * | 1988-02-02 | 1989-08-08 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JP2641483B2 (ja) * | 1988-03-22 | 1997-08-13 | 株式会社日立製作所 | 半導体発光素子の作製方法 |
JPH01320408A (ja) * | 1988-06-23 | 1989-12-26 | Nippon Steel Corp | レーザーを使った膜厚モニター及び膜厚測定方法 |
US5182757A (en) * | 1990-09-12 | 1993-01-26 | Seiko Epson Corporation | Surface emission type semiconductor laser |
JP3240636B2 (ja) * | 1990-09-12 | 2001-12-17 | セイコーエプソン株式会社 | 面発光型半導体レーザ |
US5356832A (en) * | 1990-09-12 | 1994-10-18 | Seiko Epson Corporation | Method of making surface emission type semiconductor laser |
JPH04144183A (ja) * | 1990-10-04 | 1992-05-18 | Seiko Epson Corp | 面発光型半導体レーザ |
JPH0548202A (ja) * | 1990-12-27 | 1993-02-26 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
JP2888455B2 (ja) * | 1991-01-07 | 1999-05-10 | 日本電信電話株式会社 | 半導体発光装置 |
JPH04275478A (ja) * | 1991-03-04 | 1992-10-01 | Nec Corp | 面発光半導体レーザの製造方法 |
WO1992017925A1 (en) * | 1991-03-28 | 1992-10-15 | Seiko Epson Corporation | Surface emitting type semiconductor laser and its manufacturing method |
JPH0669585A (ja) * | 1992-08-12 | 1994-03-11 | Fujitsu Ltd | 面発光半導体レーザ及びその製造方法 |
JP3095545B2 (ja) * | 1992-09-29 | 2000-10-03 | 株式会社東芝 | 面発光型半導体発光装置およびその製造方法 |
US5351256A (en) * | 1993-04-28 | 1994-09-27 | The United States Of America As Represented By The United States Department Of Energy | Electrically injected visible vertical cavity surface emitting laser diodes |
-
1995
- 1995-01-20 JP JP51946695A patent/JP3766976B2/ja not_active Expired - Lifetime
- 1995-01-20 KR KR1019950704119A patent/KR100363503B1/ko not_active IP Right Cessation
- 1995-01-20 EP EP95906499A patent/EP0691045B1/de not_active Expired - Lifetime
- 1995-01-20 US US08/491,955 patent/US5621750A/en not_active Expired - Lifetime
- 1995-01-20 WO PCT/JP1995/000060 patent/WO1995020254A1/en active IP Right Grant
- 1995-01-20 DE DE69523100T patent/DE69523100T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1995020254A1 (en) | 1995-07-27 |
JP3766976B2 (ja) | 2006-04-19 |
KR100363503B1 (ko) | 2003-02-05 |
US5621750A (en) | 1997-04-15 |
DE69523100T2 (de) | 2002-06-06 |
EP0691045B1 (de) | 2001-10-10 |
JPH08508137A (ja) | 1996-08-27 |
EP0691045A1 (de) | 1996-01-10 |
KR960701496A (ko) | 1996-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |