DE69603015T2 - Laser - Google Patents
LaserInfo
- Publication number
- DE69603015T2 DE69603015T2 DE69603015T DE69603015T DE69603015T2 DE 69603015 T2 DE69603015 T2 DE 69603015T2 DE 69603015 T DE69603015 T DE 69603015T DE 69603015 T DE69603015 T DE 69603015T DE 69603015 T2 DE69603015 T2 DE 69603015T2
- Authority
- DE
- Germany
- Prior art keywords
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95301480 | 1995-03-07 | ||
PCT/GB1996/000530 WO1996027929A1 (en) | 1995-03-07 | 1996-03-07 | A laser |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69603015D1 DE69603015D1 (en) | 1999-07-29 |
DE69603015T2 true DE69603015T2 (de) | 1999-12-23 |
Family
ID=8221115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69603015T Expired - Fee Related DE69603015T2 (de) | 1995-03-07 | 1996-03-07 | Laser |
Country Status (8)
Country | Link |
---|---|
US (1) | US5978400A (de) |
EP (1) | EP0813761B1 (de) |
CN (1) | CN1147041C (de) |
AU (1) | AU4887596A (de) |
CA (1) | CA2212736C (de) |
DE (1) | DE69603015T2 (de) |
ES (1) | ES2135214T3 (de) |
WO (1) | WO1996027929A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2950302B2 (ja) * | 1997-11-25 | 1999-09-20 | 日本電気株式会社 | 半導体レーザ |
JPH11214799A (ja) * | 1998-01-26 | 1999-08-06 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
FR2783933B1 (fr) * | 1998-09-24 | 2000-11-24 | Cit Alcatel | Composant optique integre |
US6293688B1 (en) * | 1999-11-12 | 2001-09-25 | Sparkolor Corporation | Tapered optical waveguide coupler |
JP2001177182A (ja) * | 1999-12-16 | 2001-06-29 | Fujitsu Ltd | 外部共振器型半導体レーザおよび光導波路装置 |
US6888863B1 (en) * | 2000-06-30 | 2005-05-03 | Lucent Technologies Inc. | System comprising optical semiconductor waveguide device |
JP2002261385A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Electric Corp | レーザダイオードモジュール |
US20030108080A1 (en) * | 2001-08-01 | 2003-06-12 | Binoptics, Inc | Unidirectional curved ring lasers |
JP4106210B2 (ja) * | 2001-11-02 | 2008-06-25 | 三菱電機株式会社 | 光半導体素子 |
ITMI20020267A1 (it) * | 2002-02-12 | 2003-08-12 | Bavelloni Z Spa | Macchina automatica per la lavorazione di materiali in lastra in particolare lastre di vetro |
JP2003332676A (ja) * | 2002-05-08 | 2003-11-21 | Mitsubishi Electric Corp | 半導体光装置 |
US6819702B2 (en) * | 2002-09-11 | 2004-11-16 | Bookham Technology Plc | Pump laser diode with improved wavelength stability |
US7190852B2 (en) * | 2002-10-15 | 2007-03-13 | Covega Corporation | Semiconductor devices with curved waveguides and mode transformers |
US7548567B2 (en) * | 2004-04-02 | 2009-06-16 | Vladimir Kupershmidt | Analog transmitter using an external cavity laser (ECL) |
US20090310634A1 (en) * | 2004-04-27 | 2009-12-17 | Oclaro | Stabilized laser source with very high relative feedback and narrow bandwidth |
US7203409B2 (en) * | 2004-08-16 | 2007-04-10 | Covega Corporation | Superluminescent diodes having high output power and reduced internal reflections |
GB2419033B (en) * | 2004-10-08 | 2009-12-09 | Agilent Technologies Inc | An integrated modulator / laser assembly and a method of producing same |
US8351472B2 (en) * | 2006-05-01 | 2013-01-08 | Anritsu Corporation | Semiconductor light emitting element and tunable wavelength laser light source |
US8615029B2 (en) * | 2009-12-30 | 2013-12-24 | Ipg Photonics Corporation | Optical device |
JP5484592B2 (ja) * | 2010-01-08 | 2014-05-07 | オクラロ テクノロジー リミテッド | 高線形出力のレーザシステム |
KR101754280B1 (ko) * | 2011-05-04 | 2017-07-07 | 한국전자통신연구원 | 반도체 광 소자 및 그 제조 방법 |
US9479280B2 (en) * | 2011-07-14 | 2016-10-25 | Applied Optoelectronics, Inc. | Extended cavity fabry-perot laser assembly capable of high speed optical modulation with narrow mode spacing and WDM optical system including same |
US10186836B2 (en) * | 2014-10-10 | 2019-01-22 | Nlight, Inc. | Multiple flared laser oscillator waveguide |
WO2017026005A1 (ja) * | 2015-08-07 | 2017-02-16 | 三菱電機株式会社 | 平面導波路型レーザ装置 |
WO2022184868A1 (en) * | 2021-03-05 | 2022-09-09 | Rockley Photonics Limited | Waveguide facet interface |
CN115764544B (zh) * | 2023-01-09 | 2023-05-12 | 中国科学院长春光学精密机械与物理研究所 | 一种高边模抑制比窄线宽外腔激光器及光学设备 |
CN115764543B (zh) * | 2023-01-09 | 2023-05-12 | 中国科学院长春光学精密机械与物理研究所 | 一种抗辐射窄线宽外腔激光器、光学设备 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2192095B (en) * | 1986-05-15 | 1989-12-06 | Canon Kk | Semiconductor laser array |
EP0246793A3 (de) * | 1986-05-19 | 1988-06-01 | AT&T Corp. | Hochleistungslaser mit fundamentaler transversaler Mode |
US4821277A (en) * | 1987-04-20 | 1989-04-11 | General Electric Company | Super-luminescent diode |
JPH0682863B2 (ja) * | 1987-12-02 | 1994-10-19 | 日本電信電話株式会社 | 発光ダイオード |
US5485481A (en) * | 1994-06-28 | 1996-01-16 | Seastar Optics Inc. | Fibre-grating-stabilized diode laser |
-
1996
- 1996-03-07 ES ES96904972T patent/ES2135214T3/es not_active Expired - Lifetime
- 1996-03-07 DE DE69603015T patent/DE69603015T2/de not_active Expired - Fee Related
- 1996-03-07 WO PCT/GB1996/000530 patent/WO1996027929A1/en active IP Right Grant
- 1996-03-07 AU AU48875/96A patent/AU4887596A/en not_active Abandoned
- 1996-03-07 CA CA002212736A patent/CA2212736C/en not_active Expired - Fee Related
- 1996-03-07 US US08/913,002 patent/US5978400A/en not_active Expired - Lifetime
- 1996-03-07 CN CNB96192361XA patent/CN1147041C/zh not_active Expired - Fee Related
- 1996-03-07 EP EP96904972A patent/EP0813761B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ES2135214T3 (es) | 1999-10-16 |
CA2212736A1 (en) | 1996-09-12 |
EP0813761B1 (de) | 1999-06-23 |
DE69603015D1 (en) | 1999-07-29 |
CA2212736C (en) | 2001-05-29 |
AU4887596A (en) | 1996-09-23 |
CN1177421A (zh) | 1998-03-25 |
US5978400A (en) | 1999-11-02 |
WO1996027929A1 (en) | 1996-09-12 |
EP0813761A1 (de) | 1997-12-29 |
CN1147041C (zh) | 2004-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: IPG PHOTONICS CORP., OXFORD, MASS., US |
|
8339 | Ceased/non-payment of the annual fee |