JP5086034B2 - 外部共振器型半導体レーザ装置 - Google Patents
外部共振器型半導体レーザ装置 Download PDFInfo
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- JP5086034B2 JP5086034B2 JP2007291670A JP2007291670A JP5086034B2 JP 5086034 B2 JP5086034 B2 JP 5086034B2 JP 2007291670 A JP2007291670 A JP 2007291670A JP 2007291670 A JP2007291670 A JP 2007291670A JP 5086034 B2 JP5086034 B2 JP 5086034B2
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Description
2 コリメート・レンズ
3 回折格子
4 光帰還ミラー
6 光路調整ミラー
10,15,20 アレイ型ゲイン・チップ
11a,11b,16a,16b,21a,21b 活性層
41a,41b 上面電極
42 下面電極
Claims (2)
- バンドギャップ・エネルギが互いに異なる2本のストライプ状の活性層が,後方端面から出射端面にかけて,半導体基板の基板面と平行な面内において互いに間隔をあけて形成されているアレイ型ゲイン・チップ,および
前記出射端面から出射される光が入射する回折格子を含み,前記回折格子によって回折された回折光のうちの所定波長の回折光を,光を出射したストライプ状の活性層に帰還させる,波長選択性を有する光帰還機構を備え,
前記2本の活性層が,前記後方端面の位置において前記活性層を導波される光の光軸線が前記後方端面と直交するように形成されるとともに,前記出射端面の位置において前記活性層を導波される光の光軸線が前記出射端面の法線方向に対して斜めでかつ互いに向かい合う方向に前記半導体基板の基板面と平行な面内において曲がって形成されており,
前記アレイ型ゲイン・チップの後方端面および前記光帰還機構によって光共振器が構成されている,
外部共振器型半導体レーザ装置。 - 前記2本の活性層のそれぞれに独立に電流を注入するための電極を備えている,
請求項1に記載の外部共振器型半導体レーザ装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007291670A JP5086034B2 (ja) | 2007-11-09 | 2007-11-09 | 外部共振器型半導体レーザ装置 |
Applications Claiming Priority (1)
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JP2007291670A JP5086034B2 (ja) | 2007-11-09 | 2007-11-09 | 外部共振器型半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009117746A JP2009117746A (ja) | 2009-05-28 |
JP5086034B2 true JP5086034B2 (ja) | 2012-11-28 |
Family
ID=40784504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007291670A Expired - Fee Related JP5086034B2 (ja) | 2007-11-09 | 2007-11-09 | 外部共振器型半導体レーザ装置 |
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JP (1) | JP5086034B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6368250B2 (ja) * | 2012-02-14 | 2018-08-01 | テラダイオード, インコーポレーテッド | 二次元マルチビームのスタビライザーおよびコンバイニングシステムおよび方法 |
WO2020084652A1 (ja) * | 2018-10-22 | 2020-04-30 | 三菱電機株式会社 | レーザ装置 |
JPWO2022153707A1 (ja) * | 2021-01-12 | 2022-07-21 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0436268U (ja) * | 1990-07-20 | 1992-03-26 | ||
JPH10117040A (ja) * | 1996-10-08 | 1998-05-06 | Nec Corp | 半導体レーザ素子及びその製造方法 |
JP2006073549A (ja) * | 2004-08-31 | 2006-03-16 | Yokogawa Electric Corp | 外部共振器型波長可変光源 |
US7813398B2 (en) * | 2005-09-30 | 2010-10-12 | Anritsu Corporation | Semiconductor optical element for external cavity laser |
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2007
- 2007-11-09 JP JP2007291670A patent/JP5086034B2/ja not_active Expired - Fee Related
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JP2009117746A (ja) | 2009-05-28 |
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