FR2899377B1 - Procede de realisation de structures en multicouches a proprietes controlees - Google Patents

Procede de realisation de structures en multicouches a proprietes controlees

Info

Publication number
FR2899377B1
FR2899377B1 FR0602787A FR0602787A FR2899377B1 FR 2899377 B1 FR2899377 B1 FR 2899377B1 FR 0602787 A FR0602787 A FR 0602787A FR 0602787 A FR0602787 A FR 0602787A FR 2899377 B1 FR2899377 B1 FR 2899377B1
Authority
FR
France
Prior art keywords
multilayer structures
producing multilayer
controlled properties
properties
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0602787A
Other languages
English (en)
Other versions
FR2899377A1 (fr
Inventor
Daniel Fruchart
David Jean Maurice Vempaire
Jacques Henri Lucien Pelletier
Salvatore Miraglia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Joseph Fourier Grenoble 1
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Joseph Fourier Grenoble 1
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Joseph Fourier Grenoble 1 filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0602787A priority Critical patent/FR2899377B1/fr
Priority to PCT/EP2007/053002 priority patent/WO2007113194A1/fr
Priority to EP07727474A priority patent/EP2005465A1/fr
Priority to JP2009502084A priority patent/JP2009531205A/ja
Priority to US12/225,773 priority patent/US20100291315A1/en
Publication of FR2899377A1 publication Critical patent/FR2899377A1/fr
Application granted granted Critical
Publication of FR2899377B1 publication Critical patent/FR2899377B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
FR0602787A 2006-03-30 2006-03-30 Procede de realisation de structures en multicouches a proprietes controlees Expired - Fee Related FR2899377B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0602787A FR2899377B1 (fr) 2006-03-30 2006-03-30 Procede de realisation de structures en multicouches a proprietes controlees
PCT/EP2007/053002 WO2007113194A1 (fr) 2006-03-30 2007-03-29 Procédé de réalisation de structures en multicouches à propriétés contrôlées
EP07727474A EP2005465A1 (fr) 2006-03-30 2007-03-29 Procédé de réalisation de structures en multicouches à propriétés contrôlées
JP2009502084A JP2009531205A (ja) 2006-03-30 2007-03-29 特性が制御された多層構造物の製造方法
US12/225,773 US20100291315A1 (en) 2006-03-30 2007-03-29 Method of Producing Multilayer Structures Having Controlled Properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0602787A FR2899377B1 (fr) 2006-03-30 2006-03-30 Procede de realisation de structures en multicouches a proprietes controlees

Publications (2)

Publication Number Publication Date
FR2899377A1 FR2899377A1 (fr) 2007-10-05
FR2899377B1 true FR2899377B1 (fr) 2008-08-08

Family

ID=37454314

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0602787A Expired - Fee Related FR2899377B1 (fr) 2006-03-30 2006-03-30 Procede de realisation de structures en multicouches a proprietes controlees

Country Status (5)

Country Link
US (1) US20100291315A1 (fr)
EP (1) EP2005465A1 (fr)
JP (1) JP2009531205A (fr)
FR (1) FR2899377B1 (fr)
WO (1) WO2007113194A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5394688B2 (ja) * 2008-10-03 2014-01-22 株式会社アルバック 磁気記憶媒体製造方法、磁気記憶媒体、および情報記憶装置
DE102010018874A1 (de) * 2010-04-30 2011-11-03 Siemens Aktiengesellschaft Wheatstonebrücke mit XMR-Spinvalve-Systemen

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02295137A (ja) * 1989-05-09 1990-12-06 Mitsubishi Electric Corp 電極の分離方法
JPH0945685A (ja) * 1995-07-31 1997-02-14 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH1041300A (ja) * 1996-07-25 1998-02-13 Sony Corp 配線または接続部の形成方法及び半導体装置
JP3312102B2 (ja) * 1996-11-27 2002-08-05 シャープ株式会社 不揮発性半導体記憶装置の製造方法
JP3387076B2 (ja) * 1997-01-07 2003-03-17 住友電気工業株式会社 半導体レーザ及びその製造方法
US6383574B1 (en) * 1999-07-23 2002-05-07 Headway Technologies, Inc. Ion implantation method for fabricating magnetoresistive (MR) sensor element
DE10028640B4 (de) * 2000-06-09 2005-11-03 Institut für Physikalische Hochtechnologie e.V. Wheatstonebrücke, beinhaltend Brückenelemente, bestehend aus einem Spin-Valve-System, sowie ein Verfahren zu deren Herstellung
JP2002288813A (ja) * 2001-03-26 2002-10-04 Fuji Electric Co Ltd 磁気記録媒体およびその製造方法
JP2002350599A (ja) * 2001-05-30 2002-12-04 Toshiba Corp イオン注入装置
US20050061251A1 (en) * 2003-09-02 2005-03-24 Ronghua Wei Apparatus and method for metal plasma immersion ion implantation and metal plasma immersion ion deposition
JP3991230B2 (ja) * 2004-02-12 2007-10-17 セイコーエプソン株式会社 強誘電体キャパシタ及びその形成方法、ならびに強誘電体メモリ

Also Published As

Publication number Publication date
WO2007113194A1 (fr) 2007-10-11
FR2899377A1 (fr) 2007-10-05
JP2009531205A (ja) 2009-09-03
US20100291315A1 (en) 2010-11-18
EP2005465A1 (fr) 2008-12-24

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131129