DE69627252D1 - Halbleitersubstrat und Herstellungsverfahren - Google Patents

Halbleitersubstrat und Herstellungsverfahren

Info

Publication number
DE69627252D1
DE69627252D1 DE69627252T DE69627252T DE69627252D1 DE 69627252 D1 DE69627252 D1 DE 69627252D1 DE 69627252 T DE69627252 T DE 69627252T DE 69627252 T DE69627252 T DE 69627252T DE 69627252 D1 DE69627252 D1 DE 69627252D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
manufacturing process
manufacturing
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69627252T
Other languages
English (en)
Other versions
DE69627252T2 (de
Inventor
Kiyofumi Sakaguchi
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69627252D1 publication Critical patent/DE69627252D1/de
Publication of DE69627252T2 publication Critical patent/DE69627252T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/96Porous semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
DE69627252T 1995-08-02 1996-07-31 Halbleitersubstrat und Herstellungsverfahren Expired - Lifetime DE69627252T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19754595 1995-08-02

Publications (2)

Publication Number Publication Date
DE69627252D1 true DE69627252D1 (de) 2003-05-15
DE69627252T2 DE69627252T2 (de) 2004-01-29

Family

ID=16376269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69627252T Expired - Lifetime DE69627252T2 (de) 1995-08-02 1996-07-31 Halbleitersubstrat und Herstellungsverfahren

Country Status (8)

Country Link
US (1) US6121112A (de)
EP (1) EP0757377B1 (de)
KR (1) KR100246902B1 (de)
CN (1) CN1082720C (de)
CA (1) CA2182442C (de)
DE (1) DE69627252T2 (de)
SG (1) SG60012A1 (de)
TW (1) TW330306B (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3293736B2 (ja) 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
SG55413A1 (en) * 1996-11-15 1998-12-21 Method Of Manufacturing Semico Method of manufacturing semiconductor article
SG67458A1 (en) 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
CA2232796C (en) * 1997-03-26 2002-01-22 Canon Kabushiki Kaisha Thin film forming process
SG68035A1 (en) 1997-03-27 1999-10-19 Canon Kk Method and apparatus for separating composite member using fluid
EP0996967B1 (de) * 1997-06-30 2008-11-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur Herstellung von schichtartigen Gebilden auf einem Halbleitersubstrat, Halbleitersubstrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
EP0926709A3 (de) 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Herstellungsmethode einer SOI Struktur
SG87916A1 (en) 1997-12-26 2002-04-16 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
TW522488B (en) * 1998-07-27 2003-03-01 Canon Kk Sample processing apparatus and method
JP2000223682A (ja) * 1999-02-02 2000-08-11 Canon Inc 基体の処理方法及び半導体基板の製造方法
US6417069B1 (en) * 1999-03-25 2002-07-09 Canon Kabushiki Kaisha Substrate processing method and manufacturing method, and anodizing apparatus
US6375738B1 (en) 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
GB9929521D0 (en) * 1999-12-15 2000-02-09 Secr Defence Bonded products and methods of fabrication therefor
EP1396883A3 (de) * 2002-09-04 2005-11-30 Canon Kabushiki Kaisha Substrat und Herstellungsverfahren dafür
JP2004103600A (ja) * 2002-09-04 2004-04-02 Canon Inc 基板及びその製造方法
JP2004103855A (ja) * 2002-09-10 2004-04-02 Canon Inc 基板及びその製造方法
JP2004103946A (ja) * 2002-09-11 2004-04-02 Canon Inc 基板及びその製造方法
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7538010B2 (en) * 2003-07-24 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating an epitaxially grown layer
US20050082526A1 (en) * 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing
DE102004060363B4 (de) * 2004-12-15 2010-12-16 Austriamicrosystems Ag Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung
JP4649198B2 (ja) * 2004-12-20 2011-03-09 新光電気工業株式会社 配線基板の製造方法
US20060189023A1 (en) * 2005-02-23 2006-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional structure formed by using an adhesive silicon wafer process
US7244630B2 (en) * 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
KR100697693B1 (ko) * 2005-06-24 2007-03-20 삼성전자주식회사 피모스 트랜지스터와 그 제조 방법 및 이를 갖는 스택형반도체 장치 및 그 제조 방법
US7813028B2 (en) * 2006-12-04 2010-10-12 Teledyne Licensing, Llc Manufacturing method for stress compensated X-Y gimbaled MEMS mirror array
US20080277778A1 (en) * 2007-05-10 2008-11-13 Furman Bruce K Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
EP2502266B1 (de) * 2009-11-18 2020-03-04 Soitec Verfahren zur herstellung von halbleiterstrukturen und bauelementen mit glasklebeschichten sowie auf diese weise hergestellte halbleiterstrukturen und bauelemente
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
CN104749808B (zh) * 2015-03-20 2017-08-25 电子科技大学 一种液晶光阀及其制备方法
CN107088793B (zh) * 2017-06-12 2019-02-19 中国电子科技集团公司第二十六研究所 一种声表面波器件单面抛光衬底片制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021338A (de) * 1973-06-29 1975-03-06
US4016017A (en) * 1975-11-28 1977-04-05 International Business Machines Corporation Integrated circuit isolation structure and method for producing the isolation structure
JPS63184371A (ja) * 1987-01-27 1988-07-29 Nikon Corp フオトダイオ−ドの製造方法
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US5290712A (en) * 1989-03-31 1994-03-01 Canon Kabushiki Kaisha Process for forming crystalline semiconductor film
US5278093A (en) * 1989-09-23 1994-01-11 Canon Kabushiki Kaisha Method for forming semiconductor thin film
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
JP2608351B2 (ja) * 1990-08-03 1997-05-07 キヤノン株式会社 半導体部材及び半導体部材の製造方法
EP0688048A3 (de) * 1990-08-03 1996-02-28 Canon Kk Halbleitersubstrat mit SOI Struktur
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
EP0499488B9 (de) * 1991-02-15 2004-01-28 Canon Kabushiki Kaisha Ätzlösung für das Ätzen von porösem Silizium, Ätzmethode unter Verwendung der Ätzlösung und Verfahren zur Vorbereitung einer Halbleiteranordnung unter Verwendung der Ätzlösung
CA2069038C (en) * 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
TW211621B (de) * 1991-07-31 1993-08-21 Canon Kk
DE69333619T2 (de) * 1992-01-30 2005-09-29 Canon K.K. Herstellungsverfahren für Halbleitersubstrate
JP3261685B2 (ja) * 1992-01-31 2002-03-04 キヤノン株式会社 半導体素子基体及びその作製方法
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
JP3214631B2 (ja) * 1992-01-31 2001-10-02 キヤノン株式会社 半導体基体及びその作製方法
JP3352118B2 (ja) * 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN1152187A (zh) 1997-06-18
SG60012A1 (en) 1999-02-22
DE69627252T2 (de) 2004-01-29
KR970013012A (ko) 1997-03-29
EP0757377B1 (de) 2003-04-09
TW330306B (en) 1998-04-21
CA2182442C (en) 2000-10-24
CN1082720C (zh) 2002-04-10
CA2182442A1 (en) 1997-02-03
EP0757377A2 (de) 1997-02-05
KR100246902B1 (ko) 2000-03-15
EP0757377A3 (de) 1998-01-07
US6121112A (en) 2000-09-19

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Legal Events

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8364 No opposition during term of opposition