DE69526543D1 - Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren - Google Patents

Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren

Info

Publication number
DE69526543D1
DE69526543D1 DE69526543T DE69526543T DE69526543D1 DE 69526543 D1 DE69526543 D1 DE 69526543D1 DE 69526543 T DE69526543 T DE 69526543T DE 69526543 T DE69526543 T DE 69526543T DE 69526543 D1 DE69526543 D1 DE 69526543D1
Authority
DE
Germany
Prior art keywords
resin
semiconductor device
manufacturing process
molded semiconductor
molded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69526543T
Other languages
English (en)
Other versions
DE69526543T2 (de
Inventor
Tetsuya Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69526543D1 publication Critical patent/DE69526543D1/de
Publication of DE69526543T2 publication Critical patent/DE69526543T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48253—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a potential ring of the item
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
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    • H01L2924/19041—Component type being a capacitor
DE69526543T 1994-07-13 1995-06-21 Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren Expired - Fee Related DE69526543T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18385494 1994-07-13
JP09812795A JP3509274B2 (ja) 1994-07-13 1995-03-30 樹脂封止型半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69526543D1 true DE69526543D1 (de) 2002-06-06
DE69526543T2 DE69526543T2 (de) 2002-10-31

Family

ID=26439327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526543T Expired - Fee Related DE69526543T2 (de) 1994-07-13 1995-06-21 Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren

Country Status (8)

Country Link
US (1) US5633529A (de)
EP (1) EP0693779B1 (de)
JP (1) JP3509274B2 (de)
KR (1) KR100386052B1 (de)
DE (1) DE69526543T2 (de)
HK (1) HK1013888A1 (de)
SG (1) SG65533A1 (de)
TW (1) TW293940B (de)

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JP3309686B2 (ja) * 1995-03-17 2002-07-29 セイコーエプソン株式会社 樹脂封止型半導体装置及びその製造方法
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JP3964205B2 (ja) * 1999-05-31 2007-08-22 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 半導体装置パッケージの組立方法
JP2000349221A (ja) 1999-06-02 2000-12-15 Sharp Corp リードフレームおよびそれを用いた半導体デバイス
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
JP2001230360A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6688353B1 (en) 2000-03-31 2004-02-10 Bridgestone/Firestone North American Tire, Llc Attachment patch for mounting an electronic monitoring device to the inside of a pneumatic tire
CN1265451C (zh) * 2000-09-06 2006-07-19 三洋电机株式会社 半导体装置及其制造方法
US6838751B2 (en) * 2002-03-06 2005-01-04 Freescale Semiconductor Inc. Multi-row leadframe
US7309447B2 (en) * 2003-02-03 2007-12-18 Tessera, Inc. Method for making a microelectronic package using pre-patterned, reusable mold and method for making the mold
US20050285281A1 (en) * 2004-06-29 2005-12-29 Simmons Asher L Pad-limited integrated circuit
US20070200225A1 (en) * 2006-02-28 2007-08-30 Ruzaini Ibrahim Heat sink for semiconductor package
JP5132070B2 (ja) * 2006-03-31 2013-01-30 オンセミコンダクター・トレーディング・リミテッド 回路装置およびその製造方法
JP2008300492A (ja) * 2007-05-30 2008-12-11 Rohm Co Ltd 半導体装置
US8643172B2 (en) 2007-06-08 2014-02-04 Freescale Semiconductor, Inc. Heat spreader for center gate molding
US20110012257A1 (en) * 2009-07-14 2011-01-20 Freescale Semiconductor, Inc Heat spreader for semiconductor package
JP6111973B2 (ja) * 2013-10-15 2017-04-12 株式会社デンソー 半導体装置

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JPH0883876A (ja) 1996-03-26
KR100386052B1 (ko) 2003-08-09
EP0693779A3 (de) 1997-01-08
JP3509274B2 (ja) 2004-03-22
DE69526543T2 (de) 2002-10-31
SG65533A1 (en) 1999-06-22
TW293940B (de) 1996-12-21
EP0693779A2 (de) 1996-01-24
US5633529A (en) 1997-05-27
KR960005972A (ko) 1996-02-23
EP0693779B1 (de) 2002-05-02
HK1013888A1 (en) 1999-09-10

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