DE69615437D1 - Integrierte Schaltungsanordnung und Herstellungsverfahren - Google Patents

Integrierte Schaltungsanordnung und Herstellungsverfahren

Info

Publication number
DE69615437D1
DE69615437D1 DE69615437T DE69615437T DE69615437D1 DE 69615437 D1 DE69615437 D1 DE 69615437D1 DE 69615437 T DE69615437 T DE 69615437T DE 69615437 T DE69615437 T DE 69615437T DE 69615437 D1 DE69615437 D1 DE 69615437D1
Authority
DE
Germany
Prior art keywords
integrated circuit
manufacturing process
circuit arrangement
arrangement
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69615437T
Other languages
English (en)
Other versions
DE69615437T2 (de
Inventor
Hiroto Matsubayashi
Kei Goto
Yoshihiro Notani
Yukio Ohta
Akira Inoue
Yasuharu Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69615437D1 publication Critical patent/DE69615437D1/de
Application granted granted Critical
Publication of DE69615437T2 publication Critical patent/DE69615437T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6644Packaging aspects of high-frequency amplifiers
    • H01L2223/665Bias feed arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
DE69615437T 1995-04-05 1996-01-17 Integrierte Schaltungsanordnung und Herstellungsverfahren Expired - Fee Related DE69615437T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7080221A JPH08279596A (ja) 1995-04-05 1995-04-05 集積回路装置,及びその製造方法

Publications (2)

Publication Number Publication Date
DE69615437D1 true DE69615437D1 (de) 2001-10-31
DE69615437T2 DE69615437T2 (de) 2002-07-11

Family

ID=13712321

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615437T Expired - Fee Related DE69615437T2 (de) 1995-04-05 1996-01-17 Integrierte Schaltungsanordnung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5675184A (de)
EP (2) EP1059666A1 (de)
JP (1) JPH08279596A (de)
DE (1) DE69615437T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288452A (ja) * 1995-04-20 1996-11-01 Mitsubishi Electric Corp 集積回路装置,及びその製造方法
JP3185918B2 (ja) * 1996-08-05 2001-07-11 株式会社村田製作所 電子装置
US6329234B1 (en) 2000-07-24 2001-12-11 Taiwan Semiconductor Manufactuirng Company Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
JP4804643B2 (ja) * 2001-05-08 2011-11-02 三菱電機株式会社 高周波回路装置とその製造方法
DE10162637C1 (de) * 2001-12-20 2003-08-21 Eupec Gmbh & Co Kg Schaltungsanordnung mit elektronischen Bauelementen auf einem isolierenden Trägersubstrat
US7091542B1 (en) * 2005-01-28 2006-08-15 International Business Machines Corporation Method of forming a MIM capacitor for Cu BEOL application
US20060197183A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Improved mim capacitor structure and process
US7223654B2 (en) * 2005-04-15 2007-05-29 International Business Machines Corporation MIM capacitor and method of fabricating same
US8696662B2 (en) 2005-05-12 2014-04-15 Aesculap Ag Electrocautery method and apparatus
US9339323B2 (en) 2005-05-12 2016-05-17 Aesculap Ag Electrocautery method and apparatus
US8728072B2 (en) 2005-05-12 2014-05-20 Aesculap Ag Electrocautery method and apparatus
US7862565B2 (en) 2005-05-12 2011-01-04 Aragon Surgical, Inc. Method for tissue cauterization
US8574229B2 (en) 2006-05-02 2013-11-05 Aesculap Ag Surgical tool
JP5078471B2 (ja) * 2007-07-06 2012-11-21 三菱電機株式会社 高周波増幅器
US8870867B2 (en) 2008-02-06 2014-10-28 Aesculap Ag Articulable electrosurgical instrument with a stabilizable articulation actuator
KR101580925B1 (ko) * 2009-04-28 2015-12-30 삼성전자주식회사 칩온 보드 타입의 패키지
BR112012003356B1 (pt) 2010-02-04 2021-02-02 Aesculap Ag dispositivo eletrocirúrgico
US8419727B2 (en) 2010-03-26 2013-04-16 Aesculap Ag Impedance mediated power delivery for electrosurgery
US8827992B2 (en) 2010-03-26 2014-09-09 Aesculap Ag Impedance mediated control of power delivery for electrosurgery
US9173698B2 (en) 2010-09-17 2015-11-03 Aesculap Ag Electrosurgical tissue sealing augmented with a seal-enhancing composition
US8405135B2 (en) 2010-10-05 2013-03-26 International Business Machines Corporation 3D via capacitor with a floating conductive plate for improved reliability
US9339327B2 (en) 2011-06-28 2016-05-17 Aesculap Ag Electrosurgical tissue dissecting device
KR102174907B1 (ko) 2012-09-26 2020-11-05 아에스쿨랍 아게 조직을 커팅 및 봉합하기 위한 장치
US8901711B1 (en) 2013-08-07 2014-12-02 International Business Machines Corporation Horizontal metal-insulator-metal capacitor
US10090240B2 (en) 2016-06-03 2018-10-02 Globalfoundries Inc. Interconnect structure with capacitor element and related methods
US9875959B2 (en) 2016-06-09 2018-01-23 International Business Machines Corporation Forming a stacked capacitor
US10032711B2 (en) 2016-07-25 2018-07-24 International Business Machines Corporation Integrating metal-insulator-metal capacitors with air gap process flow
US9893144B1 (en) 2016-08-05 2018-02-13 International Business Machines Corporation Methods for fabricating metal-insulator-metal capacitors
US9698213B1 (en) 2016-09-28 2017-07-04 International Business Machines Corporation Vertical MIM capacitor
US9876068B1 (en) 2016-10-31 2018-01-23 International Business Machines Corporation High-K metal-insulator-metal capacitor and method of manufacturing the same
US10008558B1 (en) 2017-01-05 2018-06-26 International Business Machines Corporation Advanced metal insulator metal capacitor
US10032855B1 (en) 2017-01-05 2018-07-24 International Business Machines Corporation Advanced metal insulator metal capacitor
US10090378B1 (en) 2017-03-17 2018-10-02 International Business Machines Corporation Efficient metal-insulator-metal capacitor
US11031457B2 (en) 2017-12-15 2021-06-08 International Business Machines Corporation Low resistance high capacitance density MIM capacitor
US10497519B1 (en) 2018-09-27 2019-12-03 International Business Machines Corporation Back-end-of-the line capacitor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959874A (en) * 1974-12-20 1976-06-01 Western Electric Company, Inc. Method of forming an integrated circuit assembly
JPS5797201A (en) * 1980-12-09 1982-06-16 Fujitsu Ltd Integrated circuit for microwave
EP0169694B1 (de) * 1984-07-25 1990-09-05 Rca Licensing Corporation Bauteil zur Unterdrückung von hochfrequenten Signalen
US4716389A (en) * 1986-10-20 1987-12-29 Honeywell Inc. Millimeter wave microstrip surface mounted attenuator
US5019535A (en) * 1989-03-28 1991-05-28 General Electric Company Die attachment method using nonconductive adhesive for use in high density interconnected assemblies
JPH0352302A (ja) * 1989-07-19 1991-03-06 Sanyo Electric Co Ltd モノリシックマイクロ波集積回路
US5138431A (en) * 1990-01-31 1992-08-11 Vlsi Technology, Inc. Lead and socket structures with reduced self-inductance
US5469334A (en) * 1991-09-09 1995-11-21 Power Integrations, Inc. Plastic quad-packaged switched-mode integrated circuit with integrated transformer windings and mouldings for transformer core pieces
JPH05235655A (ja) * 1992-02-19 1993-09-10 Toshiba Lighting & Technol Corp 高周波用増幅回路
JP3137223B2 (ja) * 1995-01-20 2001-02-19 三菱電機株式会社 高周波増幅器およびその発振防止方法

Also Published As

Publication number Publication date
JPH08279596A (ja) 1996-10-22
EP0736902A2 (de) 1996-10-09
EP1059666A1 (de) 2000-12-13
EP0736902B1 (de) 2001-09-26
EP0736902A3 (de) 1997-10-29
DE69615437T2 (de) 2002-07-11
US5675184A (en) 1997-10-07

Similar Documents

Publication Publication Date Title
DE69615437D1 (de) Integrierte Schaltungsanordnung und Herstellungsverfahren
DE69718693D1 (de) Elektronisches Bauteil und Herstellungsverfahren
DE69840246D1 (de) Elektronisches Bauteil und Herstellungsverfahren
DE59601335D1 (de) Halbleiterbauelement und Herstellverfahren
DE69522514D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69527330D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69526539D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69525795D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69637728D1 (de) Halbleiterbauteil und Herstellung desselben
DE69929456D1 (de) Nahfeldabtastkopf und herstellungsverfahren
DE69534938D1 (de) Photovoltaisches Bauelement und Herstellungsverfahren
DE69525188D1 (de) Hoch- und Niederspannungs-CMOS-Bauteil und Herstellungsverfahren
DE69406723D1 (de) Organopolysiloxan und Herstellungsverfahren
DE69517295D1 (de) Weicher Metallleiter und Herstellungsverfahren
DE69627252T2 (de) Halbleitersubstrat und Herstellungsverfahren
DE69730775D1 (de) Logische Schaltung und zugehöriges Herstellungsverfahren
DE69429906D1 (de) Halbleiterstruktur und Herstellungsverfahren
DE69522846T2 (de) Verbesserte Speicheranordnung und Herstellungsverfahren
DE69700563T2 (de) Steckerelement und Herstellungsverfahren dafür
DE69626332T2 (de) Dielektrische Planarleitung und integrierte Schaltung die dieselbe benutzt
DE69023469D1 (de) Integrierte Schaltung und Herstellungsverfahren dafür.
DE19680329T1 (de) Elektronisches Klavier und Herstellungsverfahren dafür
DE69622789D1 (de) Düse und Düsenherstellungsverfahren
DE69635476D1 (de) Kondensator und Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee