DE69525188D1 - Hoch- und Niederspannungs-CMOS-Bauteil und Herstellungsverfahren - Google Patents

Hoch- und Niederspannungs-CMOS-Bauteil und Herstellungsverfahren

Info

Publication number
DE69525188D1
DE69525188D1 DE69525188T DE69525188T DE69525188D1 DE 69525188 D1 DE69525188 D1 DE 69525188D1 DE 69525188 T DE69525188 T DE 69525188T DE 69525188 T DE69525188 T DE 69525188T DE 69525188 D1 DE69525188 D1 DE 69525188D1
Authority
DE
Germany
Prior art keywords
manufacturing process
low voltage
cmos device
voltage cmos
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525188T
Other languages
English (en)
Other versions
DE69525188T2 (de
Inventor
Chia-Cu P Mei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69525188D1 publication Critical patent/DE69525188D1/de
Publication of DE69525188T2 publication Critical patent/DE69525188T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69525188T 1994-04-08 1995-04-10 Hoch- und Niederspannungs-CMOS-Bauteil und Herstellungsverfahren Expired - Fee Related DE69525188T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/224,948 US5498554A (en) 1994-04-08 1994-04-08 Method of making extended drain resurf lateral DMOS devices

Publications (2)

Publication Number Publication Date
DE69525188D1 true DE69525188D1 (de) 2002-03-14
DE69525188T2 DE69525188T2 (de) 2002-08-22

Family

ID=22842891

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525188T Expired - Fee Related DE69525188T2 (de) 1994-04-08 1995-04-10 Hoch- und Niederspannungs-CMOS-Bauteil und Herstellungsverfahren

Country Status (5)

Country Link
US (3) US5498554A (de)
EP (1) EP0677876B1 (de)
JP (1) JPH07307394A (de)
DE (1) DE69525188T2 (de)
TW (1) TW289158B (de)

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US6160290A (en) * 1997-11-25 2000-12-12 Texas Instruments Incorporated Reduced surface field device having an extended field plate and method for forming the same
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US5976923A (en) * 1998-12-08 1999-11-02 United Microelectronics Corp. Method for fabricating a high-voltage semiconductor device
US6091657A (en) * 1999-01-20 2000-07-18 Lucent Technologies Inc. Integrated circuit having protection of low voltage devices
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US6660603B2 (en) * 2000-09-21 2003-12-09 Texas Instruments Incorporated Higher voltage drain extended MOS transistors with self-aligned channel and drain extensions
US7115946B2 (en) * 2000-09-28 2006-10-03 Kabushiki Kaisha Toshiba MOS transistor having an offset region
SE519382C2 (sv) * 2000-11-03 2003-02-25 Ericsson Telefon Ab L M Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana
US6818494B1 (en) * 2001-03-26 2004-11-16 Hewlett-Packard Development Company, L.P. LDMOS and CMOS integrated circuit and method of making
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US7019377B2 (en) * 2002-12-17 2006-03-28 Micrel, Inc. Integrated circuit including high voltage devices and low voltage devices
JP2004228466A (ja) * 2003-01-27 2004-08-12 Renesas Technology Corp 集積半導体装置およびその製造方法
US7235451B2 (en) * 2003-03-03 2007-06-26 Texas Instruments Incorporated Drain extended MOS devices with self-aligned floating region and fabrication methods therefor
US6900101B2 (en) * 2003-06-13 2005-05-31 Texas Instruments Incorporated LDMOS transistors and methods for making the same
US6867640B2 (en) 2003-07-01 2005-03-15 Ami Semiconductor, Inc. Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same
JP4198006B2 (ja) * 2003-07-25 2008-12-17 株式会社リコー 半導体装置の製造方法
US7005354B2 (en) * 2003-09-23 2006-02-28 Texas Instruments Incorporated Depletion drain-extended MOS transistors and methods for making the same
US7091535B2 (en) * 2004-03-05 2006-08-15 Taiwan Semiconductor Manufacturing Company High voltage device embedded non-volatile memory cell and fabrication method
US7238986B2 (en) * 2004-05-03 2007-07-03 Texas Instruments Incorporated Robust DEMOS transistors and method for making the same
US7358567B2 (en) * 2004-06-07 2008-04-15 United Microelectronics Corp. High-voltage MOS device and fabrication thereof
JP4959931B2 (ja) * 2004-09-29 2012-06-27 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
DE102005054672B4 (de) 2005-11-16 2014-06-12 Austriamicrosystems Ag Hochvolt-Transistor mit niedriger Threshold-Spannung und einen solchen Hochvolt-Transistor umfassendes Bauelement
KR100690924B1 (ko) * 2005-12-21 2007-03-09 삼성전자주식회사 반도체 집적 회로 장치와 그 제조 방법
KR100796500B1 (ko) * 2005-12-29 2008-01-21 동부일렉트로닉스 주식회사 고전압 반도체 소자의 방법
US8558349B2 (en) * 2006-08-11 2013-10-15 System General Corp. Integrated circuit for a high-side transistor driver
US20080042221A1 (en) * 2006-08-15 2008-02-21 Liming Tsau High voltage transistor
ITTO20060785A1 (it) * 2006-11-02 2008-05-03 St Microelectronics Srl Dispositivo mos resistente alla radiazione ionizzante
KR100834287B1 (ko) * 2006-12-27 2008-05-30 동부일렉트로닉스 주식회사 횡형 디모스소자 및 그 제조방법
US7781843B1 (en) 2007-01-11 2010-08-24 Hewlett-Packard Development Company, L.P. Integrating high-voltage CMOS devices with low-voltage CMOS
US20080237740A1 (en) * 2007-03-29 2008-10-02 United Microelectronics Corp. Semiconductor device and the manufacturing method thereof
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
US7548365B2 (en) * 2007-06-06 2009-06-16 Texas Instruments Incorporated Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
US7838940B2 (en) 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
US8163621B2 (en) * 2008-06-06 2012-04-24 Globalfoundries Singapore Pte. Ltd. High performance LDMOS device having enhanced dielectric strain layer
US8097930B2 (en) * 2008-08-08 2012-01-17 Infineon Technologies Ag Semiconductor devices with trench isolations
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
US8643090B2 (en) * 2009-03-23 2014-02-04 Infineon Technologies Ag Semiconductor devices and methods for manufacturing a semiconductor device
US8247280B2 (en) * 2009-10-20 2012-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of low and high voltage CMOS devices
US8575702B2 (en) * 2009-11-27 2013-11-05 Magnachip Semiconductor, Ltd. Semiconductor device and method for fabricating semiconductor device
EP2402998B1 (de) * 2010-07-01 2020-04-08 ams AG Herstellung eines p-Kanal-LDMOS-Transistors
US8664720B2 (en) 2010-08-25 2014-03-04 Infineon Technologies Ag High voltage semiconductor devices
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
JP5784512B2 (ja) * 2012-01-13 2015-09-24 株式会社東芝 半導体装置
JP2013187263A (ja) * 2012-03-06 2013-09-19 Canon Inc 半導体装置、記録装置及びそれらの製造方法
US9123642B1 (en) 2013-07-22 2015-09-01 Cypress Semiconductor Corporation Method of forming drain extended MOS transistors for high voltage circuits
CN104425489B (zh) * 2013-08-20 2017-03-01 上海华虹宏力半导体制造有限公司 高压器件和低压器件集成结构和集成方法
CN104425370B (zh) * 2013-08-27 2017-10-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
JP6193771B2 (ja) * 2014-01-28 2017-09-06 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
US5501994A (en) 1996-03-26
US5747850A (en) 1998-05-05
EP0677876A1 (de) 1995-10-18
EP0677876B1 (de) 2002-01-30
DE69525188T2 (de) 2002-08-22
JPH07307394A (ja) 1995-11-21
US5498554A (en) 1996-03-12
TW289158B (de) 1996-10-21

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8339 Ceased/non-payment of the annual fee