IT1235843B - Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione. - Google Patents

Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.

Info

Publication number
IT1235843B
IT1235843B IT8983626A IT8362689A IT1235843B IT 1235843 B IT1235843 B IT 1235843B IT 8983626 A IT8983626 A IT 8983626A IT 8362689 A IT8362689 A IT 8362689A IT 1235843 B IT1235843 B IT 1235843B
Authority
IT
Italy
Prior art keywords
cmos
supply voltage
support
integrated device
device containing
Prior art date
Application number
IT8983626A
Other languages
English (en)
Other versions
IT8983626A0 (it
Inventor
Claudio Contiero
Paola Galbiati
Lucia Zullino
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8983626A priority Critical patent/IT1235843B/it
Publication of IT8983626A0 publication Critical patent/IT8983626A0/it
Priority to US07/535,774 priority patent/US5041895A/en
Priority to DE69028354T priority patent/DE69028354T2/de
Priority to EP90830268A priority patent/EP0403449B1/en
Priority to JP2156586A priority patent/JP3043367B2/ja
Application granted granted Critical
Publication of IT1235843B publication Critical patent/IT1235843B/it
Priority to US08/943,326 priority patent/USRE37424E1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT8983626A 1989-06-14 1989-06-14 Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione. IT1235843B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8983626A IT1235843B (it) 1989-06-14 1989-06-14 Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.
US07/535,774 US5041895A (en) 1989-06-14 1990-06-08 Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
DE69028354T DE69028354T2 (de) 1989-06-14 1990-06-14 Integrierte Vorrichtung mit komplementären LDMOS Leistungstransistoren, CMOS und vertikalen, integrierten PNP-Strukturen in Mischtechnologie, die imstande ist, relativ hohen Speisespannungen zu widerstehen
EP90830268A EP0403449B1 (en) 1989-06-14 1990-06-14 Mixed technology intergrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
JP2156586A JP3043367B2 (ja) 1989-06-14 1990-06-14 比較的高いサプライ電圧に耐える卓越した能力を有する相補ｌｄｍｏｓパワートランジスタ、ｃｍｏｓ及び縦型ｐｎｐ集積構造を含んで成る混合技術集積デバイス
US08/943,326 USRE37424E1 (en) 1989-06-14 1997-10-03 Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8983626A IT1235843B (it) 1989-06-14 1989-06-14 Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.

Publications (2)

Publication Number Publication Date
IT8983626A0 IT8983626A0 (it) 1989-06-14
IT1235843B true IT1235843B (it) 1992-11-03

Family

ID=11323341

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8983626A IT1235843B (it) 1989-06-14 1989-06-14 Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.

Country Status (5)

Country Link
US (1) US5041895A (it)
EP (1) EP0403449B1 (it)
JP (1) JP3043367B2 (it)
DE (1) DE69028354T2 (it)
IT (1) IT1235843B (it)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465189A (en) * 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
KR940009357B1 (ko) * 1991-04-09 1994-10-07 삼성전자주식회사 반도체 장치 및 그 제조방법
US5204541A (en) * 1991-06-28 1993-04-20 Texas Instruments Incorporated Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices
US5157281A (en) * 1991-07-12 1992-10-20 Texas Instruments Incorporated Level-shifter circuit for integrated circuits
JP3218642B2 (ja) * 1991-09-27 2001-10-15 富士電機株式会社 大電流集積回路の配線構造
US5225702A (en) * 1991-12-05 1993-07-06 Texas Instruments Incorporated Silicon controlled rectifier structure for electrostatic discharge protection
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
EP0657995B1 (en) 1993-12-07 1999-10-13 STMicroelectronics S.r.l. Mixed typology output stage
DE69330564T2 (de) * 1993-12-15 2002-06-27 St Microelectronics Srl Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält
US5498554A (en) * 1994-04-08 1996-03-12 Texas Instruments Incorporated Method of making extended drain resurf lateral DMOS devices
JP3335060B2 (ja) * 1995-02-21 2002-10-15 シャープ株式会社 半導体装置の製造方法
JP3400181B2 (ja) * 1995-04-25 2003-04-28 ローム株式会社 半導体装置およびその製造方法
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
DE19548060A1 (de) * 1995-12-21 1997-06-26 Siemens Ag Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
DE69738058T2 (de) * 1996-04-15 2008-05-21 Denso Corp., Kariya Halbleiteranordnung mit einem Leistungstransistor-Bauelement
DE69618343D1 (de) 1996-05-21 2002-02-07 Cons Ric Microelettronica Leistungshalbleiterbauelementstruktur mit vertikalem PNP-Transistor
US5950091A (en) * 1996-12-06 1999-09-07 Advanced Micro Devices, Inc. Method of making a polysilicon gate conductor of an integrated circuit formed as a sidewall spacer on a sacrificial material
US6124174A (en) * 1997-05-16 2000-09-26 Advanced Micro Devices, Inc. Spacer structure as transistor gate
US5866934A (en) 1997-06-20 1999-02-02 Advanced Micro Devices, Inc. Parallel and series-coupled transistors having gate conductors formed on sidewall surfaces of a sacrificial structure
TW421874B (en) * 1998-01-09 2001-02-11 Winbond Electronics Corp Integrated structure for output buffer and silicon controlled rectifier
US6897525B1 (en) * 1998-11-26 2005-05-24 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP3317345B2 (ja) * 1999-07-23 2002-08-26 日本電気株式会社 半導体装置
US6818494B1 (en) * 2001-03-26 2004-11-16 Hewlett-Packard Development Company, L.P. LDMOS and CMOS integrated circuit and method of making
JP4689861B2 (ja) * 2001-04-03 2011-05-25 レンゴー株式会社 カートン
US6768183B2 (en) * 2001-04-20 2004-07-27 Denso Corporation Semiconductor device having bipolar transistors
JP2003017577A (ja) * 2001-07-04 2003-01-17 Denso Corp 半導体装置
JP4003438B2 (ja) * 2001-11-07 2007-11-07 株式会社デンソー 半導体装置の製造方法および半導体装置
JP3970689B2 (ja) * 2002-05-30 2007-09-05 エルピーダメモリ株式会社 半導体装置及びその製造方法
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
US7019377B2 (en) * 2002-12-17 2006-03-28 Micrel, Inc. Integrated circuit including high voltage devices and low voltage devices
SE0303106D0 (sv) * 2003-11-21 2003-11-21 Infineon Technologies Ag Ldmos transistor device, integrated circuit, and fabrication method thereof
US7230302B2 (en) * 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
JP4795869B2 (ja) * 2006-06-26 2011-10-19 レンゴー株式会社 包装体
US7781843B1 (en) 2007-01-11 2010-08-24 Hewlett-Packard Development Company, L.P. Integrating high-voltage CMOS devices with low-voltage CMOS
US20090127629A1 (en) * 2007-11-15 2009-05-21 Zia Alan Shafi Method of forming npn and pnp bipolar transistors in a CMOS process flow that allows the collectors of the bipolar transistors to be biased differently than the substrate material
US7906810B2 (en) * 2008-08-06 2011-03-15 United Microelectronics Corp. LDMOS device for ESD protection circuit
KR101681494B1 (ko) * 2010-03-03 2016-12-01 삼성전자 주식회사 반도체 장치
CN102176467B (zh) * 2011-03-29 2016-03-23 上海华虹宏力半导体制造有限公司 沟槽式金属氧化物半导体场效应晶体管
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
US9356512B2 (en) * 2013-07-29 2016-05-31 Broadcom Corporation Envelope tracking power supply with direct connection to power source
GB2561388B (en) 2017-04-13 2019-11-06 Raytheon Systems Ltd Silicon carbide integrated circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4120707A (en) * 1977-03-30 1978-10-17 Harris Corporation Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
JPS61281544A (ja) * 1985-06-06 1986-12-11 Fuji Electric Co Ltd 半導体集積回路の製造方法
JPS62119936A (ja) * 1985-11-19 1987-06-01 Fujitsu Ltd コンプリメンタリ−ｌｓｉチツプ
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
JPH01140759A (ja) * 1987-11-27 1989-06-01 Nec Corp Ｂｉ−ＭＯＳ半導体装置
JPH01272145A (ja) * 1988-04-25 1989-10-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
US4918026A (en) * 1989-03-17 1990-04-17 Delco Electronics Corporation Process for forming vertical bipolar transistors and high voltage CMOS in a single integrated circuit chip

Also Published As

Publication number Publication date
JPH0324758A (ja) 1991-02-01
US5041895A (en) 1991-08-20
EP0403449A3 (en) 1992-07-08
DE69028354T2 (de) 1997-01-23
DE69028354D1 (de) 1996-10-10
EP0403449A2 (en) 1990-12-19
IT8983626A0 (it) 1989-06-14
EP0403449B1 (en) 1996-09-04
JP3043367B2 (ja) 2000-05-22

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628