IT8819563A0 - Dispositivo semiconduttore ad alta tensione di rottura. - Google Patents

Dispositivo semiconduttore ad alta tensione di rottura.

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Publication number
IT8819563A0
IT8819563A0 IT8819563A IT1956388A IT8819563A0 IT 8819563 A0 IT8819563 A0 IT 8819563A0 IT 8819563 A IT8819563 A IT 8819563A IT 1956388 A IT1956388 A IT 1956388A IT 8819563 A0 IT8819563 A0 IT 8819563A0
Authority
IT
Italy
Prior art keywords
semiconductor device
breakdown voltage
high breakdown
voltage semiconductor
voltage
Prior art date
Application number
IT8819563A
Other languages
English (en)
Other versions
IT1216464B (it
Inventor
Akio Nakagawa
Original Assignee
Toshiba Kk
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Filing date
Publication date
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Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of IT8819563A0 publication Critical patent/IT8819563A0/it
Application granted granted Critical
Publication of IT1216464B publication Critical patent/IT1216464B/it

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques
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    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8819563A 1987-02-26 1988-02-26 Dispositivo semiconduttore ad alta tensione di rottura. IT1216464B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4356487 1987-02-26
JP18942087 1987-07-29

Publications (2)

Publication Number Publication Date
IT8819563A0 true IT8819563A0 (it) 1988-02-26
IT1216464B IT1216464B (it) 1990-03-08

Family

ID=26383357

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8819563A IT1216464B (it) 1987-02-26 1988-02-26 Dispositivo semiconduttore ad alta tensione di rottura.

Country Status (3)

Country Link
JP (1) JP2896141B2 (it)
DE (1) DE3806164A1 (it)
IT (1) IT1216464B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343067A (en) * 1987-02-26 1994-08-30 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
EP1202352B1 (en) * 1991-01-31 2008-08-06 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5072268A (en) * 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
JPH05335529A (ja) * 1992-05-28 1993-12-17 Fujitsu Ltd 半導体装置およびその製造方法
DE4233773C2 (de) * 1992-10-07 1996-09-19 Daimler Benz Ag Halbleiterstruktur für Halbleiterbauelemente mit hoher Durchbruchspannung
US5373183A (en) * 1993-04-28 1994-12-13 Harris Corporation Integrated circuit with improved reverse bias breakdown
DE4333661C1 (de) * 1993-10-01 1995-02-16 Daimler Benz Ag Halbleiterbauelement mit hoher Durchbruchsspannung
JP2755185B2 (ja) * 1994-11-07 1998-05-20 日本電気株式会社 Ｓｏｉ基板
JP3435930B2 (ja) * 1995-09-28 2003-08-11 株式会社デンソー 半導体装置及びその製造方法
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JP4767264B2 (ja) * 2008-01-15 2011-09-07 三菱電機株式会社 高耐圧半導体装置
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JP7404600B2 (ja) * 2019-11-01 2023-12-26 株式会社東海理化電機製作所 半導体集積回路
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IT1216464B (it) 1990-03-08
JPH01103851A (ja) 1989-04-20
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DE3806164C2 (it) 1991-03-14
JP2896141B2 (ja) 1999-05-31

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