KR890012388A - Mis형 반도체 집적회로장치 - Google Patents

Mis형 반도체 집적회로장치

Info

Publication number
KR890012388A
KR890012388A KR1019890000295A KR890000295A KR890012388A KR 890012388 A KR890012388 A KR 890012388A KR 1019890000295 A KR1019890000295 A KR 1019890000295A KR 890000295 A KR890000295 A KR 890000295A KR 890012388 A KR890012388 A KR 890012388A
Authority
KR
South Korea
Prior art keywords
integrated circuit
type semiconductor
semiconductor integrated
circuit device
mis type
Prior art date
Application number
KR1019890000295A
Other languages
English (en)
Other versions
KR930006140B1 (ko
Inventor
마쯔오 이찌까와
Original Assignee
세이꼬 엡슨 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63223720A external-priority patent/JPH021171A/ja
Application filed by 세이꼬 엡슨 가부시끼가이샤 filed Critical 세이꼬 엡슨 가부시끼가이샤
Publication of KR890012388A publication Critical patent/KR890012388A/ko
Application granted granted Critical
Publication of KR930006140B1 publication Critical patent/KR930006140B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019890000295A 1988-01-21 1989-01-13 Mis형 반도체 집적회로장치 KR930006140B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63-11463 1988-01-21
JP63-11464 1988-01-21
JP1146488 1988-01-21
JP1146388 1988-01-21
JP63-223720 1988-09-07
JP63223720A JPH021171A (ja) 1988-01-21 1988-09-07 Ｍｉｓ型半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR890012388A true KR890012388A (ko) 1989-08-26
KR930006140B1 KR930006140B1 (ko) 1993-07-07

Family

ID=27279435

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890000295A KR930006140B1 (ko) 1988-01-21 1989-01-13 Mis형 반도체 집적회로장치

Country Status (2)

Country Link
US (1) US5003375A (ko)
KR (1) KR930006140B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059735A (ko) * 1999-12-30 2001-07-06 박종섭 금속 게이트전극을 갖는 모스트랜지스터 제조방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5346836A (en) * 1991-06-06 1994-09-13 Micron Technology, Inc. Process for forming low resistance contacts between silicide areas and upper level polysilicon interconnects
JPH05198739A (ja) * 1991-09-10 1993-08-06 Mitsubishi Electric Corp 積層型半導体装置およびその製造方法
US5227320A (en) * 1991-09-10 1993-07-13 Vlsi Technology, Inc. Method for producing gate overlapped lightly doped drain (goldd) structure for submicron transistor
JPH05315332A (ja) * 1992-04-02 1993-11-26 Nec Corp 半導体装置およびその製造方法
US5604159A (en) * 1994-01-31 1997-02-18 Motorola, Inc. Method of making a contact structure
KR100211070B1 (ko) * 1994-08-19 1999-07-15 아끼구사 나오유끼 반도체 장치 및 그 제조방법
US5736455A (en) * 1995-12-22 1998-04-07 Micron Technology, Inc. Method for passivating the sidewalls of a tungsten word line
CA2194653A1 (en) * 1997-01-08 1998-07-08 Junichi Matsushita Hydrogen heat treatment method of silicon wafers using a high-purity inert substitution gas
US5985768A (en) * 1997-04-30 1999-11-16 International Business Machines Corporation Method of forming a semiconductor
JP2000138224A (ja) * 1998-11-04 2000-05-16 Fujitsu Ltd 半導体装置の製造方法
US6265297B1 (en) 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6372618B2 (en) * 2000-01-06 2002-04-16 Micron Technology, Inc. Methods of forming semiconductor structures
GB2399945B (en) * 2000-01-06 2004-11-17 Micron Technology Inc Methods of forming semiconductor structures
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
TW497151B (en) * 2001-09-21 2002-08-01 Mosel Vitelic Inc Method for producing semiconductor with increased threshold voltage uniformity of transistor
KR100552592B1 (ko) * 2004-01-27 2006-02-15 삼성전자주식회사 반도체 소자의 제조 방법
US8003504B2 (en) * 2006-09-01 2011-08-23 Bae Systems Information And Electronic Systems Integration Inc. Structure and method for fabrication of field effect transistor gates with or without field plates

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
US4274106A (en) * 1977-11-07 1981-06-16 Mitsubishi Denki Kabushiki Kaisha Explosion proof vibration resistant flat package semiconductor device
JPS5650533A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Semiconductor device
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
US4227944A (en) * 1979-06-11 1980-10-14 General Electric Company Methods of making composite conductive structures in integrated circuits
US4807013A (en) * 1984-10-17 1989-02-21 American Telephone And Telegraph Company At&T Bell Laboratories Polysilicon fillet
JPH0697693B2 (ja) * 1984-12-05 1994-11-30 株式会社東芝 Ｍｏｓ型ｆｅｔのゲート構造の製造方法
JPS6286865A (ja) * 1985-10-14 1987-04-21 Mitsubishi Electric Corp Ｍｏｓ型トランジスタ
US4866492A (en) * 1986-02-28 1989-09-12 Polyfet Rf Devices, Inc. Low loss fet
US4774204A (en) * 1987-06-02 1988-09-27 Texas Instruments Incorporated Method for forming self-aligned emitters and bases and source/drains in an integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059735A (ko) * 1999-12-30 2001-07-06 박종섭 금속 게이트전극을 갖는 모스트랜지스터 제조방법

Also Published As

Publication number Publication date
KR930006140B1 (ko) 1993-07-07
US5003375A (en) 1991-03-26

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E902 Notification of reason for refusal
G160 Decision to publish patent application
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Payment date: 20070625

Year of fee payment: 15

LAPS Lapse due to unpaid annual fee