KR900011093A - 집적 회로형 반도체 소자 - Google Patents

집적 회로형 반도체 소자

Info

Publication number
KR900011093A
KR900011093A KR1019890018767A KR890018767A KR900011093A KR 900011093 A KR900011093 A KR 900011093A KR 1019890018767 A KR1019890018767 A KR 1019890018767A KR 890018767 A KR890018767 A KR 890018767A KR 900011093 A KR900011093 A KR 900011093A
Authority
KR
South Korea
Prior art keywords
semiconductor device
integrated circuit
type semiconductor
circuit type
integrated
Prior art date
Application number
KR1019890018767A
Other languages
English (en)
Other versions
KR0141600B1 (ko
Inventor
리분 윙 스티븐
무케르제 사티엔드라나쓰
Original Assignee
필립스 일렉트로닉스엔.브이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 필립스 일렉트로닉스엔.브이 filed Critical 필립스 일렉트로닉스엔.브이
Publication of KR900011093A publication Critical patent/KR900011093A/ko
Application granted granted Critical
Publication of KR0141600B1 publication Critical patent/KR0141600B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890018767A 1988-12-20 1989-12-18 집적 회로형 반도체 소자 KR0141600B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/288,062 US4893212A (en) 1988-12-20 1988-12-20 Protection of power integrated circuits against load voltage surges
US288062 1988-12-20

Publications (2)

Publication Number Publication Date
KR900011093A true KR900011093A (ko) 1990-07-11
KR0141600B1 KR0141600B1 (ko) 1998-06-01

Family

ID=23105581

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018767A KR0141600B1 (ko) 1988-12-20 1989-12-18 집적 회로형 반도체 소자

Country Status (7)

Country Link
US (1) US4893212A (ko)
EP (1) EP0375037B1 (ko)
JP (1) JPH02215163A (ko)
KR (1) KR0141600B1 (ko)
CN (1) CN1037044C (ko)
DE (1) DE68924050T2 (ko)
IE (1) IE71164B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049764A (en) * 1990-01-25 1991-09-17 North American Philips Corporation, Signetics Div. Active bypass for inhibiting high-frequency supply voltage variations in integrated circuits
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
DE4120394A1 (de) * 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
IT1264619B1 (it) * 1992-06-18 1996-10-04 Int Rectifier Corp Metodo e dispositivo per la protezione da corto circuiti di dispositivi a transistore di potenza
US5448441A (en) * 1994-04-05 1995-09-05 The United States Of America As Represented By The Secretary Of The Navy Fault protection circuit for power switching device
GB9426007D0 (en) * 1994-12-22 1995-02-22 Philips Electronics Uk Ltd A power semiconductor switch
US6483341B2 (en) * 2001-01-04 2002-11-19 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance apparatus
US6456107B1 (en) * 2001-01-04 2002-09-24 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance method
US6969959B2 (en) * 2001-07-06 2005-11-29 Lutron Electronics Co., Inc. Electronic control systems and methods
CN102254859B (zh) * 2010-05-17 2014-08-20 北大方正集团有限公司 制造包括齐纳二极管的金属氧化物半导体集成电路的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2223376C3 (de) * 1972-05-12 1975-01-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schutzschaltungsanordnung für einen Schatttransistor im induktiven Lastkreis
DE2638179A1 (de) * 1976-08-25 1978-03-09 Bosch Gmbh Robert Schaltungsvorrichtung zur ableitung des abschaltstroms von induktiven verbrauchern
DE2638178C2 (de) * 1976-08-25 1986-01-02 Robert Bosch Gmbh, 7000 Stuttgart Schutzvorrichtung für integrierte Schaltungen gegen Überspannungen
DE2900420A1 (de) * 1979-01-08 1980-07-24 Bosch Gmbh Robert Einrichtung zum steuern des stromes durch einen elektromagnetischen verbraucher, insbesondere durch ein elektromagnetisch betaetigbares einspritzventil einer brennkraftmaschine
JPS5768071A (en) * 1980-10-14 1982-04-26 Nec Corp Semiconductor device with protective element
JPS58219771A (ja) * 1982-06-15 1983-12-21 Nec Corp 集積回路
JPS59104171A (ja) * 1982-12-06 1984-06-15 Seiko Epson Corp 半導体装置
US4503480A (en) * 1983-02-17 1985-03-05 Ncr Corporation Voltage compensating driver circuit
US4658203A (en) * 1984-12-04 1987-04-14 Airborne Electronics, Inc. Voltage clamp circuit for switched inductive loads
JPS61174672A (ja) * 1985-01-29 1986-08-06 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4665459A (en) * 1985-04-01 1987-05-12 Motorola, Inc. Method and circuit for dissipating stored inductive energy
DE3664029D1 (en) * 1985-06-18 1989-07-20 Fuji Electric Co Ltd Switching device
JPS6260253A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 保護回路
JPS62199064A (ja) * 1986-02-27 1987-09-02 Matsushita Electric Ind Co Ltd Ｍｏｓ・ｆｅｔゲ−ト保護回路
US4679112A (en) * 1986-07-31 1987-07-07 General Motors Corporation Transistor protection circuit for automotive motor control applications
JPS6395667A (ja) * 1986-10-09 1988-04-26 Nec Corp 入力保護装置
JPH0263213A (ja) * 1988-08-29 1990-03-02 Hitachi Ltd パワースイッチ回路

Also Published As

Publication number Publication date
DE68924050D1 (de) 1995-10-05
DE68924050T2 (de) 1996-04-18
CN1037044C (zh) 1998-01-14
EP0375037A3 (en) 1991-09-25
IE71164B1 (en) 1997-01-29
KR0141600B1 (ko) 1998-06-01
EP0375037A2 (en) 1990-06-27
JPH02215163A (ja) 1990-08-28
IE894060L (en) 1990-06-20
EP0375037B1 (en) 1995-08-30
CN1044364A (zh) 1990-08-01
US4893212A (en) 1990-01-09

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A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

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