DE69026226D1 - Integrierte Halbleiterschaltung - Google Patents

Integrierte Halbleiterschaltung

Info

Publication number
DE69026226D1
DE69026226D1 DE69026226T DE69026226T DE69026226D1 DE 69026226 D1 DE69026226 D1 DE 69026226D1 DE 69026226 T DE69026226 T DE 69026226T DE 69026226 T DE69026226 T DE 69026226T DE 69026226 D1 DE69026226 D1 DE 69026226D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026226T
Other languages
English (en)
Other versions
DE69026226T2 (de
Inventor
Noriyuki Tanino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69026226D1 publication Critical patent/DE69026226D1/de
Publication of DE69026226T2 publication Critical patent/DE69026226T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
DE69026226T 1989-12-28 1990-08-03 Integrierte Halbleiterschaltung Expired - Fee Related DE69026226T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1342766A JPH0773202B2 (ja) 1989-12-28 1989-12-28 半導体集積回路

Publications (2)

Publication Number Publication Date
DE69026226D1 true DE69026226D1 (de) 1996-05-02
DE69026226T2 DE69026226T2 (de) 1996-10-10

Family

ID=18356334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026226T Expired - Fee Related DE69026226T2 (de) 1989-12-28 1990-08-03 Integrierte Halbleiterschaltung

Country Status (4)

Country Link
US (1) US5072142A (de)
EP (1) EP0434898B1 (de)
JP (1) JPH0773202B2 (de)
DE (1) DE69026226T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563873B1 (de) * 1992-04-03 1998-06-03 Matsushita Electric Industrial Co., Ltd. Keramisches Mehrschicht-Substrat für hohe Frequenzen
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204528A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路及び複合スイツチ回路
US6396325B2 (en) * 1999-12-03 2002-05-28 Fairchild Semiconductor Corporation High frequency MOSFET switch
US6897704B2 (en) * 2001-05-25 2005-05-24 Thunder Creative Technologies, Inc. Electronic isolator
US20040196089A1 (en) * 2003-04-02 2004-10-07 O'donnell John J. Switching device
ES2263357B1 (es) * 2004-11-16 2007-11-16 Diseño De Sistemas En Silicio, S.A. Circuito conmutador para la obtencion de un rango dinamico duplicado.
DE102005027426B4 (de) * 2005-06-14 2008-12-11 Rohde & Schwarz Gmbh & Co. Kg Elektronischer Hochfrequenzschalter mit Galliumarsenid-Feldeffekttransistor
JP6428341B2 (ja) 2015-02-13 2018-11-28 三菱電機株式会社 周波数逓倍器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834062B1 (de) * 1969-07-11 1973-10-18
FR2346909A1 (fr) * 1973-05-08 1977-10-28 Thomson Csf Perfectionnements aux portes analogiques
US3902078A (en) * 1974-04-01 1975-08-26 Crystal Ind Inc Analog switch
US4728826A (en) * 1986-03-19 1988-03-01 Siemens Aktiengesellschaft MOSFET switch with inductive load
US4789846A (en) * 1986-11-28 1988-12-06 Mitsubishi Denki Kabushiki Kaisha Microwave semiconductor switch
FR2612018B1 (fr) * 1987-03-06 1989-05-26 Labo Electronique Physique Melangeur hyperfrequences
US4908531A (en) * 1988-09-19 1990-03-13 Pacific Monolithics Monolithic active isolator
US4873460A (en) * 1988-11-16 1989-10-10 California Institute Of Technology Monolithic transistor gate energy recovery system
US4939485A (en) * 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch

Also Published As

Publication number Publication date
JPH03201801A (ja) 1991-09-03
DE69026226T2 (de) 1996-10-10
JPH0773202B2 (ja) 1995-08-02
EP0434898B1 (de) 1996-03-27
US5072142A (en) 1991-12-10
EP0434898A2 (de) 1991-07-03
EP0434898A3 (en) 1992-02-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee