FR2346909A1 - Perfectionnements aux portes analogiques - Google Patents

Perfectionnements aux portes analogiques

Info

Publication number
FR2346909A1
FR2346909A1 FR7316511A FR7316511A FR2346909A1 FR 2346909 A1 FR2346909 A1 FR 2346909A1 FR 7316511 A FR7316511 A FR 7316511A FR 7316511 A FR7316511 A FR 7316511A FR 2346909 A1 FR2346909 A1 FR 2346909A1
Authority
FR
France
Prior art keywords
analogue
doors
analogue doors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7316511A
Other languages
English (en)
Other versions
FR2346909B1 (fr
Inventor
Serge Desperques-Volmier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7316511A priority Critical patent/FR2346909A1/fr
Priority to US466471A priority patent/US3908136A/en
Priority to DE2421988A priority patent/DE2421988C2/de
Priority to GB2016774A priority patent/GB1464436A/en
Publication of FR2346909A1 publication Critical patent/FR2346909A1/fr
Application granted granted Critical
Publication of FR2346909B1 publication Critical patent/FR2346909B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
FR7316511A 1973-05-08 1973-05-08 Perfectionnements aux portes analogiques Granted FR2346909A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7316511A FR2346909A1 (fr) 1973-05-08 1973-05-08 Perfectionnements aux portes analogiques
US466471A US3908136A (en) 1973-05-08 1974-05-02 Analogue gates
DE2421988A DE2421988C2 (de) 1973-05-08 1974-05-07 Analogspannungsschalter
GB2016774A GB1464436A (en) 1973-05-08 1974-05-07 Analogue gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7316511A FR2346909A1 (fr) 1973-05-08 1973-05-08 Perfectionnements aux portes analogiques

Publications (2)

Publication Number Publication Date
FR2346909A1 true FR2346909A1 (fr) 1977-10-28
FR2346909B1 FR2346909B1 (fr) 1978-08-04

Family

ID=9118961

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7316511A Granted FR2346909A1 (fr) 1973-05-08 1973-05-08 Perfectionnements aux portes analogiques

Country Status (4)

Country Link
US (1) US3908136A (fr)
DE (1) DE2421988C2 (fr)
FR (1) FR2346909A1 (fr)
GB (1) GB1464436A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0434898A2 (fr) * 1989-12-28 1991-07-03 Mitsubishi Denki Kabushiki Kaisha Circuit semi-conducteur intégré

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1045217A (fr) * 1976-02-10 1978-12-26 Glenn A. Pollitt Commutateur mosfet a impedance constante
JPS53140962A (en) * 1977-05-16 1978-12-08 Hitachi Denshi Ltd Electronic switch circuit
US4639614A (en) * 1985-09-13 1987-01-27 Rca Corporation Solid state RF switch with self-latching capability
NL8701472A (nl) * 1987-06-24 1989-01-16 Philips Nv Geintegreerde schakeling met meegeintegreerde, voedingsspanningsverlagende spanningsregelaar.
US5055723A (en) * 1989-02-28 1991-10-08 Precision Monolithics, Inc. Jfet analog switch with gate current control
US5229709A (en) * 1990-06-29 1993-07-20 U.S. Philips Corp. Integrated circuit with temperature compensation
US5208493A (en) * 1991-04-30 1993-05-04 Thomson Consumer Electronics, Inc. Stereo expansion selection switch
CN102694534B (zh) * 2011-03-23 2015-12-02 快捷半导体(苏州)有限公司 无电可正常闭合的模拟开关及开关方法
US8502595B2 (en) * 2011-03-23 2013-08-06 Fairchild Semiconductor Corporation Power down enabled analog switch
US8818005B2 (en) 2011-05-17 2014-08-26 Fairchild Semiconductor Corporation Capacitor controlled switch system
CN103368546A (zh) * 2012-03-30 2013-10-23 快捷半导体(苏州)有限公司 断电启用模拟开关及相关方法
US8610489B2 (en) 2012-05-15 2013-12-17 Fairchild Semiconductor Corporation Depletion-mode circuit
US10734893B1 (en) * 2019-05-03 2020-08-04 Psemi Corporation Driving circuit for switches used in a charge pump

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3586880A (en) * 1969-08-11 1971-06-22 Astrodata Inc Isolation and compensation of sample and hold circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0434898A2 (fr) * 1989-12-28 1991-07-03 Mitsubishi Denki Kabushiki Kaisha Circuit semi-conducteur intégré
EP0434898A3 (en) * 1989-12-28 1992-02-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit

Also Published As

Publication number Publication date
DE2421988C2 (de) 1982-09-09
US3908136A (en) 1975-09-23
GB1464436A (en) 1977-02-16
FR2346909B1 (fr) 1978-08-04
DE2421988A1 (de) 1974-11-28

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Legal Events

Date Code Title Description
ST Notification of lapse