KR900008673A - 반도체집적회로장치 - Google Patents
반도체집적회로장치Info
- Publication number
- KR900008673A KR900008673A KR1019890015182A KR890015182A KR900008673A KR 900008673 A KR900008673 A KR 900008673A KR 1019890015182 A KR1019890015182 A KR 1019890015182A KR 890015182 A KR890015182 A KR 890015182A KR 900008673 A KR900008673 A KR 900008673A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940026092A KR0158939B1 (ko) | 1988-11-09 | 1994-10-12 | 반도체직접회로장치의 제조방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-284587 | 1988-11-09 | ||
JP63284587A JP3059442B2 (ja) | 1988-11-09 | 1988-11-09 | 半導体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940026092A Division KR0158939B1 (ko) | 1988-11-09 | 1994-10-12 | 반도체직접회로장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900008673A true KR900008673A (ko) | 1990-06-03 |
KR0158871B1 KR0158871B1 (ko) | 1998-12-01 |
Family
ID=17680388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890015182A KR0158871B1 (ko) | 1988-11-09 | 1989-10-23 | 반도체집적회로장치 |
Country Status (3)
Country | Link |
---|---|
US (13) | US5300802A (ko) |
JP (1) | JP3059442B2 (ko) |
KR (1) | KR0158871B1 (ko) |
Families Citing this family (80)
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JP3059442B2 (ja) * | 1988-11-09 | 2000-07-04 | 株式会社日立製作所 | 半導体記憶装置 |
JP2545762B2 (ja) * | 1990-04-13 | 1996-10-23 | 日本電装株式会社 | 高耐圧misトランジスタおよびこのトランジスタを有する相補型トランジスタの製造方法 |
US5424567A (en) * | 1991-05-15 | 1995-06-13 | North American Philips Corporation | Protected programmable transistor with reduced parasitic capacitances and method of fabrication |
KR960012303B1 (ko) * | 1992-08-18 | 1996-09-18 | 삼성전자 주식회사 | 불휘발성 반도체메모리장치 및 그 제조방법 |
JP3522788B2 (ja) * | 1992-10-29 | 2004-04-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US5592003A (en) * | 1992-12-28 | 1997-01-07 | Nippon Steel Corporation | Nonvolatile semiconductor memory and method of rewriting data thereto |
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JP5610930B2 (ja) * | 2010-08-30 | 2014-10-22 | 三菱電機株式会社 | 半導体装置 |
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JP2015056472A (ja) * | 2013-09-11 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
KR101788459B1 (ko) | 2016-07-11 | 2017-10-20 | 매그나칩 반도체 유한회사 | 디스플레이 드라이버 ic 구조물 |
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-
1988
- 1988-11-09 JP JP63284587A patent/JP3059442B2/ja not_active Expired - Lifetime
-
1989
- 1989-10-23 KR KR1019890015182A patent/KR0158871B1/ko not_active IP Right Cessation
-
1991
- 1991-05-20 US US07/704,739 patent/US5300802A/en not_active Expired - Lifetime
-
1994
- 1994-01-11 US US08/179,960 patent/US5407853A/en not_active Expired - Lifetime
-
1995
- 1995-04-17 US US08/422,941 patent/US5656839A/en not_active Expired - Lifetime
- 1995-04-17 US US08/422,940 patent/US5629541A/en not_active Expired - Lifetime
- 1995-05-30 US US08/451,268 patent/US5656522A/en not_active Expired - Lifetime
-
1997
- 1997-06-30 US US08/885,184 patent/US5904518A/en not_active Expired - Fee Related
-
1999
- 1999-03-31 US US09/282,204 patent/US6255690B1/en not_active Expired - Fee Related
-
2001
- 2001-06-05 US US09/873,451 patent/US6451643B2/en not_active Expired - Fee Related
-
2002
- 2002-06-10 US US10/164,626 patent/US6777282B2/en not_active Expired - Fee Related
-
2004
- 2004-04-07 US US10/819,205 patent/US6960501B2/en not_active Expired - Fee Related
-
2005
- 2005-09-08 US US11/220,723 patent/US7071050B2/en not_active Expired - Fee Related
-
2006
- 2006-03-31 US US11/393,774 patent/US7399667B2/en not_active Expired - Fee Related
-
2008
- 2008-06-13 US US12/138,830 patent/US20080254582A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7399667B2 (en) | 2008-07-15 |
US5656839A (en) | 1997-08-12 |
US20060172482A1 (en) | 2006-08-03 |
US5629541A (en) | 1997-05-13 |
US5904518A (en) | 1999-05-18 |
US20080254582A1 (en) | 2008-10-16 |
US5300802A (en) | 1994-04-05 |
JPH02129968A (ja) | 1990-05-18 |
US6960501B2 (en) | 2005-11-01 |
US6451643B2 (en) | 2002-09-17 |
US6777282B2 (en) | 2004-08-17 |
US20010038119A1 (en) | 2001-11-08 |
JP3059442B2 (ja) | 2000-07-04 |
US20020179963A1 (en) | 2002-12-05 |
US5407853A (en) | 1995-04-18 |
US5656522A (en) | 1997-08-12 |
US6255690B1 (en) | 2001-07-03 |
US7071050B2 (en) | 2006-07-04 |
KR0158871B1 (ko) | 1998-12-01 |
US20040191979A1 (en) | 2004-09-30 |
US20060014347A1 (en) | 2006-01-19 |
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