JPS548988A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS548988A JPS548988A JP7467177A JP7467177A JPS548988A JP S548988 A JPS548988 A JP S548988A JP 7467177 A JP7467177 A JP 7467177A JP 7467177 A JP7467177 A JP 7467177A JP S548988 A JPS548988 A JP S548988A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode
- famos
- al2o3
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910007277 Si3 N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To make it possible to erase written information easily, by using a film of Si3 N4, Al2O3, etc., whose band gap against poly-crystal Si constituting an electrode is smaller than that of SiO2 as an insulating film separating the 1st gate electrode from the 2nd one for a FAMOS element in the double-gate structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7467177A JPS548988A (en) | 1977-06-23 | 1977-06-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7467177A JPS548988A (en) | 1977-06-23 | 1977-06-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS548988A true JPS548988A (en) | 1979-01-23 |
Family
ID=13553917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7467177A Pending JPS548988A (en) | 1977-06-23 | 1977-06-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS548988A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079603A (en) * | 1986-05-26 | 1992-01-07 | Hitachi, Ltd. | Semiconductor memory device |
US5189497A (en) * | 1986-05-26 | 1993-02-23 | Hitachi, Ltd. | Semiconductor memory device |
US5904518A (en) * | 1988-11-09 | 1999-05-18 | Hitachi, Ltd. | Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells |
-
1977
- 1977-06-23 JP JP7467177A patent/JPS548988A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079603A (en) * | 1986-05-26 | 1992-01-07 | Hitachi, Ltd. | Semiconductor memory device |
US5189497A (en) * | 1986-05-26 | 1993-02-23 | Hitachi, Ltd. | Semiconductor memory device |
US5904518A (en) * | 1988-11-09 | 1999-05-18 | Hitachi, Ltd. | Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells |
US6255690B1 (en) | 1988-11-09 | 2001-07-03 | Hitachi, Ltd. | Non-volatile semiconductor memory device |
US6451643B2 (en) | 1988-11-09 | 2002-09-17 | Hitachi, Ltd. | Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs |
US6777282B2 (en) | 1988-11-09 | 2004-08-17 | Renesas Technology Corp. | Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETs |
US6960501B2 (en) | 1988-11-09 | 2005-11-01 | Renesas Technology Corp. | Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets |
US7071050B2 (en) | 1988-11-09 | 2006-07-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having single-element type non-volatile memory elements |
US7399667B2 (en) | 1988-11-09 | 2008-07-15 | Renesas Technology Corp. | Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements |
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