JPS5422782A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5422782A
JPS5422782A JP8728277A JP8728277A JPS5422782A JP S5422782 A JPS5422782 A JP S5422782A JP 8728277 A JP8728277 A JP 8728277A JP 8728277 A JP8728277 A JP 8728277A JP S5422782 A JPS5422782 A JP S5422782A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
overhang
deterioration
securing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8728277A
Other languages
Japanese (ja)
Other versions
JPS6036111B2 (en
Inventor
Yuji Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8728277A priority Critical patent/JPS6036111B2/en
Publication of JPS5422782A publication Critical patent/JPS5422782A/en
Publication of JPS6036111B2 publication Critical patent/JPS6036111B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To prevent the field concentration and thus to avoid the deterioration of the memory holding property for the double-gate type nonvolatile memory by securing such structure that causes no overhang at the periphery of the floating gate.
JP8728277A 1977-07-22 1977-07-22 Manufacturing method of semiconductor device Expired JPS6036111B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8728277A JPS6036111B2 (en) 1977-07-22 1977-07-22 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8728277A JPS6036111B2 (en) 1977-07-22 1977-07-22 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5422782A true JPS5422782A (en) 1979-02-20
JPS6036111B2 JPS6036111B2 (en) 1985-08-19

Family

ID=13910422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8728277A Expired JPS6036111B2 (en) 1977-07-22 1977-07-22 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6036111B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788775A (en) * 1980-11-21 1982-06-02 Nec Corp Manufacture of non volatile semiconductor memory unit
JPS58116772A (en) * 1981-12-29 1983-07-12 Fujitsu Ltd Manufacture of semiconductor memory
US5736770A (en) * 1993-05-25 1998-04-07 Nippondenso Co., Ltd. Semiconductor device with conductive connecting layer and abutting insulator section made of oxide of same material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788775A (en) * 1980-11-21 1982-06-02 Nec Corp Manufacture of non volatile semiconductor memory unit
JPS58116772A (en) * 1981-12-29 1983-07-12 Fujitsu Ltd Manufacture of semiconductor memory
US5736770A (en) * 1993-05-25 1998-04-07 Nippondenso Co., Ltd. Semiconductor device with conductive connecting layer and abutting insulator section made of oxide of same material

Also Published As

Publication number Publication date
JPS6036111B2 (en) 1985-08-19

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