NL7510943A - MEMORY FET WITH ISOLATED FLOATING MEMORY GATE. - Google Patents

MEMORY FET WITH ISOLATED FLOATING MEMORY GATE.

Info

Publication number
NL7510943A
NL7510943A NL7510943A NL7510943A NL7510943A NL 7510943 A NL7510943 A NL 7510943A NL 7510943 A NL7510943 A NL 7510943A NL 7510943 A NL7510943 A NL 7510943A NL 7510943 A NL7510943 A NL 7510943A
Authority
NL
Netherlands
Prior art keywords
memory
fet
isolated floating
gate
memory gate
Prior art date
Application number
NL7510943A
Other languages
Dutch (nl)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742445091 external-priority patent/DE2445091A1/en
Priority claimed from DE19752505824 external-priority patent/DE2505824C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7510943A publication Critical patent/NL7510943A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
NL7510943A 1974-09-20 1975-09-17 MEMORY FET WITH ISOLATED FLOATING MEMORY GATE. NL7510943A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19742445091 DE2445091A1 (en) 1974-09-20 1974-09-20 Storage FET with insulated storage gate - has insulated control gate and is fitted with high internal capacitance between gates
DE19752505824 DE2505824C3 (en) 1975-02-12 1975-02-12 n-channel memory FET

Publications (1)

Publication Number Publication Date
NL7510943A true NL7510943A (en) 1976-03-23

Family

ID=25767730

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7510943A NL7510943A (en) 1974-09-20 1975-09-17 MEMORY FET WITH ISOLATED FLOATING MEMORY GATE.

Country Status (9)

Country Link
JP (1) JPS5157292A (en)
BE (1) BE833631A (en)
CH (1) CH601895A5 (en)
DK (1) DK422975A (en)
FR (1) FR2295523A1 (en)
GB (1) GB1517925A (en)
IT (1) IT1042648B (en)
NL (1) NL7510943A (en)
SE (1) SE415415B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2345813A1 (en) * 1976-03-26 1977-10-21 Hughes Aircraft Co PROCESS FOR MAKING FIELD-EFFECT TRANSISTOR MEMORY ELEMENTS

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105374A (en) * 1979-02-07 1980-08-12 Nec Corp Nonvolatile semiconductor memory
SE8301228L (en) * 1982-03-09 1984-08-19 Rca Corp SEMI CONDUCT WITH FREE-TREATING BOARDS
IT1201834B (en) * 1986-07-10 1989-02-02 Sgs Microelettronica Spa SEMICONDUCTOR NON-VOLATILE MEMORY DEVICE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2345813A1 (en) * 1976-03-26 1977-10-21 Hughes Aircraft Co PROCESS FOR MAKING FIELD-EFFECT TRANSISTOR MEMORY ELEMENTS

Also Published As

Publication number Publication date
IT1042648B (en) 1980-01-30
SE7510484L (en) 1976-05-17
GB1517925A (en) 1978-07-19
BE833631A (en) 1976-03-19
JPS5157292A (en) 1976-05-19
FR2295523B1 (en) 1981-10-09
CH601895A5 (en) 1978-07-14
FR2295523A1 (en) 1976-07-16
SE415415B (en) 1980-09-29
DK422975A (en) 1976-03-21

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Legal Events

Date Code Title Description
BN A decision not to publish the application has become irrevocable